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 The Fundamentals of CMOS Image Sensors with Richard Crisp 

This video provides a sneak peek of "CMOS Image Sensors: Technology, Applications, and Camera Design Methodology," an SPIE course taught by imaging systems expert Richard Crisp. The course covers everything from the basics of photon capture to sensor architecture and real-world system implementation.
The preview highlights key differences between CCD and CMOS image sensors, delves into common sensor architectures such as rolling shutter and global shutter, and explains the distinction between frontside and backside illumination.
It also introduces the primary noise sources in image sensors and how they can be managed through design and optimization techniques such as photon transfer analysis and MTF assessment.
You'll also see how the course approaches imaging system design using a top-down methodology. This includes considerations regarding pixel architecture, optics, frame rate, and data bandwidth, all demonstrated through practical examples, such as a networked video camera design.
Whether you're an engineer, scientist, or technical manager working with imaging systems, this course is designed to help you better understand the technology behind modern CMOS image sensors and how to make informed design choices. Enjoy!

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Guo et al. from Changchun Institute of Optics, University of Chinese Academy of Sciences, and Gpixel Inc. published a paper titled "Study on 3D Effects on Small Time Delay Integration Image Sensor Pixels" in Sensors.

Abstract: This paper demonstrates the impact of 3D effects on performance parameters in small-sized Time Delay Integration (TDI) image sensor pixels. In this paper, 2D and 3D simulation models of 3.5 μm × 3.5 μm small-sized TDI pixels were constructed, utilizing a three-phase pixel structure integrated with a lateral anti-blooming structure. The simulation experiments reveal the limitations of traditional 2D pixel simulation models by comparing the 2D and 3D structure simulation results. This research validates the influence of the 3D effects on the barrier height of the anti-blooming structure and the full well potential and proposes methods to optimize the full well potential and the operating voltage of the anti-blooming structure. To verify the simulation results, test chips with pixel sizes of 3.5 μm × 3.5 μm and 7.0 μm × 7.0 μm were designed and manufactured based on a 90 nm CCD-in-CMOS process. The measurement results of the test chips matched the simulation data closely and demonstrated excellent performance: the 3.5 μm × 3.5 μm pixel achieved a full well capacity of 9 ke- while maintaining a charge transfer efficiency of over 0.99998.

Paper link [open access]: https://www.mdpi.com/1424-8220/25/7/1953

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 SPAD and SPAD Arrays: Theory, Practice, and Applications

The video is a comprehensive webinar on Single Photon Avalanche Diodes (SPADs) and SPAD arrays, addressing their theory, applications, and recent advancements. It is led by experts from the New Jersey Institute of Technology and Hamamatsu, discussing technical fundamentals, challenges, and innovative solutions to improve the performance of SPAD devices. Key applications highlighted include fluorescence lifetime imaging, remote gas sensing, quantum key distribution, and 3D radiation detection, showcasing SPAD's unique ability to timestamp events and enhance photon detection efficiency.

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Recent speculative news article suggest that Samsung is weighing exiting CIS business after recent exit by SK Hynix.

News source: https://www.digitimes.com/news/a20250312PD213/cis-samsung-sk-hynix-business-lsi.html

SK Hynix is shutting down its CMOS image sensor (CIS) business, fueling industry speculation over whether Samsung Electronics will follow suit. Samsung's system LSI division, which oversees its CIS operations, is undergoing an operational diagnosis...

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In this keynote held at the 2024 International Conference on Computational Photography, Prof. Davide Scaramuzza from the University of Zurich presents a visionary keynote on event cameras, which are bio-inspired vision sensors that outperform conventional cameras with ultra-low latency, high dynamic range, and minimal power consumption. He dives into the motivation behind event-based cameras, explains how these sensors work, and explores their mathematical modeling and processing frameworks. He highlights cutting-edge applications across computer vision, robotics, autonomous vehicles, virtual reality, and mobile devices while also addressing the open challenges and future directions shaping this exciting field.
00:00 - Why event cameras matter to robotics and computer vision

07:24 - Bandwidth-latency tradeoff
08:24 - Working principle of the event camera
10:50 - Who sells event cameras
12:27 - Relation between event cameras and the biological eye
13:19 - Mathematical model of the event camera
15:35 - Image reconstruction from events
18:32 - A simple optical-flow algorithm
20:20 - How to process events in general
21:28 - 1st order approximation of the event generation model
23:56 - Application 1: Event-based feature tracking
25:03 - Application 2: Ultimate SLAM
26:30 - Application 3: Autonomous navigation in low light
27:38 - Application 4: Keeping drones fly when a rotor fails
31:06 - Contrast maximization for event cameras
34:14 - Application 1: Video stabilization
35:16 - Application 2: Motion segmentation
36:32 - Application 3: Dodging dynamic objects
38:57 - Application 4: Catching dynamic objects
39:41 - Application 5: High-speed inspection at Boeing and Strata
41:33 - Combining events and RGB cameras and how to apply deep learning
45:18 - Application 1: Slow-motion video
48:34 - Application 2: Video deblurring
49:45 - Application 3: Advanced Driving Assistant Systems
56:34 - History and future of event cameras
58:42 - Reading material and Q&A

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From PetaPixel: https://petapixel.com/2025/04/15/sony-unveils-the-worlds-smallest-and-lightest-lidar-depth-sensor/

Sony announced the AS-DT1, the world’s smallest and lightest miniature precision LiDAR depth sensor.

Measuring a mere 29 by 29 by 31 millimeters (1.14 by 1.14 by 1.22 inches) excluding protrusions, the Sony AS-DT1 LiDAR Depth Sensor relies upon sophisticated miniaturization and optical lens technologies from Sony’s machine vision industrial cameras to accurately measure distance and range. The device utilizes “Direct Time of Flight” (dToF) LiDAR technology and features a Sony Single Photon Avalanche Diode (SPAD) image sensor. 

From the official Sony webpage: https://pro.sony/ue_US/products/lidar/as-dt1

• 1.14 (W) x 1.14 (H) x 1.22 in (D)
• 50 g (1.1 oz)
• Utilizes dToF LiDAR technology
• Single Photon Avalanche Diode (SPAD) sensor
• Range distance of 40 m (131 ft) indoor, 20 m (65.6 ft) outdoor
• Lightweight aluminum alloy housing structure
• 2 USB-C ports
• Connector for external power, UART interface and trigger

• HFoV 30° or more
• Maximum measurement range at 15 fps, 50 percent reflectivity, center: Indoor: 131.23 ft and Outdoor: 65.62 ft
• Measurement accuracy at 10 m: Indoor/Outdoor: ±0.2 in
• Distance resolution: 0.98 in
• Frame rate: 30 fps
• 15 fps @ Maximum ranging distance mode
• Number of ranging points 576（24 x 24）
• Laser wavelength 940 nm
• Dimensions 1.14 (W) x 1.14 (H) x 1.22 in (D) (excluding protrusions)
• Weight 1.1 oz or less

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Tripurari Singh, Image Algorithmics (US); Mritunjay Singh, Image Algorithmics presented a paper titled "RGBC-IR: A CFA for single exposure dark flash" at Electronic Imaging 2025.

Abstract: Modern RGB-IR cameras have evolved to capture accurate colors and NIR from a single sensor. While these cameras can employ their RGB images to effectively denoise IR, they contain too few IR pixels to do the reverse: denoise RGB with IR.Improving low light RGB with an IR illuminator is an important feature for upcoming automotive applications where cabins have to be kept dark at night so as not to distract the driver. Current solutions to this problem either discard the IR cut filter and take separate RGB and IR exposures and suffer from poor colors. Or employ a bulky beam splitter architecture with separate RGB and IR sensors.We propose a camera with a novel RGBC-IR color filter array containing clear pixels that are sensitive to both visible light and IR. Its RGB pixels feature an IR attenuating coating while its IR pixels contain a black filter that blocks visible light.Mulitspectral demosaicking techniques are used to reconstruct RGB and IR images, as well as a high SNR luminance image containing the Clear, RGB and IR signals. Fusion techniques developed for beam splitter RGB-IR cameras are used to denoise RGB and IR using the luminance.

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PARIS, France and OBERSULM, Germany – March 5, 2025 - IDS Imaging Development Systems GmbH,  market leader in industrial machine vision, and Prophesee SA, inventor of the most advanced neuromorphic vision systems, today announced that IDS’ new uEye EVS camera line incorporates the high-speed, dynamic range and data efficiency of the Prophesee-Sony IMX636HD event-based vision sensor to offer new capabilities for industrial machine vision applications.

The result of extensive collaboration between the two companies, the solution features Prophesee’s proven neuromorphic approach to capturing fast-moving objects with significantly less data processing, power and blur than traditional frame-based methods. With these capabilities, the uEye EVS camera is the ideal solution for applications that require real-time machine vision processing at very high speed, such as optical monitoring of vibrations or high-speed motion analysis.

The camera benefits from Prophesee’s event-based vision’s ability to capture only relevant events in a scene. In contrast to conventional image sensors, it does not capture every image completely at regular intervals (frames) but only reacts to changes within a scene. It transmits events depending on when and where the brightness in its field of view changes - for each individual sensor pixel. The temporal resolution, i.e. the minimum measurable time difference between two successive changes in brightness, can be less than 100 microseconds.

The sensor is supported by Metavision SDK, a seamlessly integrated suite of software tools and models, APIs, and other training and development resources from Prophesee for efficient evaluation, visualization, and customization.

"This partnership combines our mutual areas of expertise to realize the benefits of event-based vision, including remarkable temporal resolution which make the cameras optimised for analysing highly dynamic scenes. It enables best conditions for capturing fast object movements without loss of information, comparable to an image-based frame rate of more than 10,000 images per second," explains Patrick Schick, Product Owner 3D & Vision Software. “At the same time, the sensor ignores all motionless areas of its field of view and thus generates 10 to 1000 times less data than image-based variants. This saves memory and computing time.”

“IDS cameras are well known to address the toughest machine vision use cases and with the incorporation of Prophesee event-based vision technologies, it strengthens its offering to provide far more performance, power efficiency and accuracy, even in the most challenging conditions,” says Luca Verre, CEO and co-founder of Prophesee. “We are excited to see how the efforts of this tight collaboration have resulted in the new uEye EVS camera which leverages the potential of our sensors and development environment to deliver new value to its customers.”

About IDS Imaging Development Systems GmbH:
IDS Imaging Development Systems GmbH is a leading manufacturer of industrial cameras and pioneer in industrial image processing. The owner-managed, environmentally certified company develops high-performance and versatile 2D and 3D cameras as well as models with artificial intelligence (AI) or with streaming/event recording feature. The almost unlimited range of applications covers multiple non-industrial and industrial sectors of equipment, plant and mechanical engineering.
Since its foundation in 1997 as a two-man company, IDS has developed into an independent, ISO and environmental-friendly certified family business with around 320 employees. The headquarters in Obersulm, Germany, is both a development and production site. With subsidiaries in the USA, Japan, South Korea and the UK, as well as further representative offices in France, Benelux and India, the technology company has a global presence.

About Prophesee
Prophesee is the inventor of the world’s most advanced neuromorphic vision systems. Prophesee’s patented sensors and AI algorithms, introduce a new computer vision paradigm based on how the human eye and brain work. Like the human vision, it sees events: essential, motion information in the scene, not a succession of conventional images. This breakthrough method allows for unprecedented speed (>10 000fps time resolution equivalent), dynamic range (>120dB), data volume (10x to 1000x less) and power efficiency (<10 mW). Prophesee bio-inspired revolution opens a new path to absolute efficiency and safety in autonomous driving, IoT and Industry 4.0. Prophesee reveals the invisible.   For more information, please visit www.prophesee.ai.

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Various news agencies reporting that SK hynix is exiting the CIS business to focus on AI.

https://www.trendforce.com/news/2025/03/06/news-sk-hynix-reportedly-exits-cis-to-focus-on-ai-memory-amid-weak-demand-and-fierce-china-competition/

Amid the AI-driven HBM boom, SK hynix is exiting its non-core CMOS image sensor (CIS) business, according to ZDNet and Edaily.

The ZDNet report suggests that SK hynix used to supply CMOS sensors for Samsung’s Galaxy Z3 and Chinese smartphones, but struggled to expand due to weak market demand and rising competition from Chinese newcomers.

According to SK hynix, its CIS division, launched in 2007, gained expertise in logic semiconductors beyond memory. However, the company decided to shift resources from CIS to AI memory to strengthen its AI-focused strategy, as per ZDNet.

Another report from fnews notes that SK hynix entered the image sensor market in 2008 by acquiring Silicon File. In 2019, it established a CIS R&D center in Japan and launched the “Black Pearl” sensor brand.

However, while trailing behind Sony and Samsung on the CIS business, SK hynix has been gradually downsizing the division, according to Edaily.

In late 2024, the company placed its CIS development team under the Future Technology Research Institute amid ongoing discussions about the business’s declining profitability, the Edaily report indicates.

https://www.thelec.net/news/articleView.html?idxno=5177 

SK Hynix is existing the CMOS image sensor (CIS) business, TheElec has learned.

The company will instead focus fully on AI memory products. Those working at its CIS business unit will be transferred to teams working on high-bandwidth memory (HBM).

In a recent internal communication event with employees, SK Hynix said the AI era has come and that the company has achieved “great results” in the AI memory sector.

The company was in the middle of a “great transition” to become a core AI company, SK Hynix told employees.

Technology and expertise that its CIS business unit will be crucial in solidifying its position as a global AI company, SK Hynix added.

SK Hynix started its CIS business in 2007 and since then attempted to expand its market share in the mobile market. But the unit continued to mark low profitability and its existence was always questioned.

In its year’s end reshuffle lats year, the business unit was moved to be under the supervision of the Future Technology Lab. These teams are more research oriented than teams under the supervision of the CEO.
SK Hynix CEO Kwak Noh-jung was also known to be strongly in favor of continuing the CIS business unit prior to the exit.

The company, during the vent, also said it plans to become a full stack AI memory provider.

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ICCP is the premier annual conference on computational imaging. The conference brings together researchers with interests broadly related to advancing computational imaging, from theory to systems to applications, including sensors, optics, algorithms, machine intelligence, vision science and perception.
ICCP 2025 will be an in-person event at the University of Toronto in Toronto, Canada, from July 21 – 23, 2025.

ICCP 2025 seeks novel and high-quality submissions in all areas of computational imaging—from theory to systems to applications, including sensors, optics, algorithms, machine intelligence, vision science, and perception—as well as the following topics of interest.

•  High-performance imaging
•  Computational cameras, illumination, and displays
•  Advanced image and video processing
•  Integration of imaging, physics, and machine learning
•  Organizing and exploiting photo/video collections
•  Structured light and time-of-flight imaging
•  Appearance, shape, and illumination capture
•  Computational optics (wavefront coding, digital holography, compressive sensing, etc.)
•  Sensor and illumination hardware
•  Imaging models and limits
•  Physics-based rendering, neural rendering, and differentiable rendering
•  Applications: imaging on mobile platforms, scientific imaging, medicine and biology, user interfaces, AR/VR systems

1.  The PAMI special issue: for papers that describe entirely novel work (i.e., not extensions of published conference papers) and are also of archival quality with comprehensive evaluation and analysis.
2.  The ICCP Proceedings: for papers that meet traditional conference criteria for quality and novelty but do not meet the criteria for (1) above.

Reviewing will be double-blind, and authors will be allowed a rebuttal after initial reviews. After review, the program chairs will inform the authors of accepted papers whether their paper has been selected for the special issue or the conference proceedings (see the Review and Decision Process section below for further details). Both sets of accepted papers will be presented as talks at the conference.

Please visit this page for more details and submission link: https://iccp2025.iccp-conference.org/#callforpapers

Paper submission deadline (firm, no extensions)     April 9, 2025 at 2359h Pacific Time.

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The Future of Image Sensors, John McCarten

John McCarten presented a talk as part of the Society for Imaging Science and Technology (IS&T) Rochester NY chapter seminar series on 22 Jan. 2025.

John McCarten studied Physics at Cornell University and currently works for L3Harris. Since 2001, John’s focus has been on image sensors and cameras. He has worked with semiconductor foundries on four continents. He has over 30 patents and has been the technical lead on development projects that have brought in over a billion dollars in sales.

00:00 - Introduction
00:45 - Future of Image Sensors
50:22 - Discussion

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New! IISW25 Technical Program (preliminary): Link

Venue: Awaji Yumebutai Int. Conf. Center, Hyogo, Japan.
Date: 2–5 June, 2025
 
New! Pre-registration information: Link

Authors can find the Paper Numbers or Poster Numbers in the Program to complete the required pre-registration.

After collecting all the camera-ready files, the final Program with timetables will be posted here.

New! IISW25 Right to Publish Form: Link

Authors need to download, sign, print to PDF, and submit it along with the camera-ready 4-page paper by 03/22/25.

Submit files to the same CMT site where you submitted the abstracts : https://cmt3.research.microsoft.com/IISW2025
 
 
General Workshop Co-Chairs
Yusuke Oike – Sony (Japan)
Shoji Kawahito – Shizuoka University and SUiCTE
Technical Program Chairs
Calvin Chao – TSMC
Rihito Kuroda – Tohoku University
IISS Board of Directors
Calvin Chao – TSMC
Boyd Fowler – OmniVision
Robert Henderson – The University of Edinburgh
Vladimir Koifman – Analog Value
Rihito Kuroda – Tohoku University
Guy Meynants – Photolitics
Junichi Nakamura – Brillnics
Shouleh Niksad – Jet Propulsion Lab.
Yusuke Oike – Sony (Japan)
Johannes Solhusvik – Sony (Norway)
Daniel Van Blerkom – Forza Silicon-Ametek
Yibing Michelle Wang – Samsung Semiconductor

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A recent article in IEEE Spectrum discusses three approaches to improve color throughput in low-light settings: nano-prisms, light pillars, and color splitters.

Link: https://spectrum.ieee.org/smartphone-camera-sensors-next-gen/nano-light-pillars-bring-low-light-images-into-focus

“Nano-pillars” are a light channeling form of a metasurface that, a little like Imec's color splitter, also direct specific wavelengths of light to the detector pixels best suited to receive the light. (VisEra Technologies)

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TLDR; Register as soon as possible starting February 17, as the number of attendees is limited! 

IISW 2025 Announcement of Pre-registration
 
The 2025 International Image Sensor Workshop (IISW) provides a biennial opportunity to present innovative work in the area of solid-state image sensors and share new results with the image sensor community. The event is intended for image sensor technologists; in order to encourage attendee interaction and a shared experience, attendance is limited, with strong acceptance preference given to workshop presenters. As is the tradition, the 2025 workshop will emphasize an open exchange of information among participants in an informal, secluded setting on the Awaji Island in Hyōgo, Japan.
 
The pre-registration, along with the workshop program, will be open from February 17th, 2025. Details about pre-registration have been made available in advance at:
 
https://imagesensors.org/2025-international-image-sensor-workshop/
 
Priority seating will be given to presenters of accepted papers, resulting in a limited number of seats available for other attendees. Registration will generally be on a first-come, first-served basis. However, in line with the workshop’s commitment to fostering diverse and lively discussions, the organizers reserve the right to adjust allocations to ensure a balanced representation of affiliations.

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Link: https://thinklucid.com/tech-briefs/triton2-evs-explained-optimizing-event-based-imaging/

Lucid Vision Labs has published an in-depth article on their analysis of the bias and threshold features of Sony's IMX636 and IMX637 event-based sensors. The report goes into details on how the sensor can be controlled so that users can tweak and tune the event based data.

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Link: https://www.vision-systems.com/cameras-accessories/image-sensors/article/55264400/gpixel-launches-new-large-format-image-sensor

Gpixel Launches New Large Format Image Sensor

Sensor especially designed for physical science, astronomy vision applications.

Gpixel has launched a new large format monochrome CMOS image sensor, the GSENSE1517BSI. This backside illuminated sensor has 4116 x 4100, 16.8 MPixel resolution with 15 x 15 µm pixel size, 61.74 x 61.5 imaging area, and 4 fps frame rate. It has 92% peak QE and minimum read noise of 1.2e. It has both dual gain HDR and 14-bit ADC, which enables a wide variety of imaging modes. It can achieve up to 95.3db dynamic range. It has an operating temperature range of -60°C to 50° C.

This sensor is especially designed for scientific applications such astronomy related vision tasks, including space situational awareness, and orbital object tracking.

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LYNRED Eyesential SW, VGA 10 µm pitch SWIR imaging sensor, provides leading-edge performance in sensitivity, low noise and ease-of-use for machine vision, scientific imaging and spectroscopy, where delivering affordability is key

Teledyne/FLIR Webinar on Sony's 4th Gen Pregius

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More than 250 key stakeholders from across the image sensors industry will convene in London 18-19^th March for the 19^th edition of Smithers’ renowned Image Sensors Europe conference.

Since 2007, this premier event has become the annual cornerstone for technical and business discussions in the image sensors sector. Each year, this ever-evolving market continuously prompts new and exciting opportunities for the entire supply chain. Image Sensors Europe provides a platform for leading industry representatives from across the digital imaging supply chain to engage in high caliber discussions and unrivalled face-to-face networking opportunities.

Guided by insights from an Advisory Board representing the full value chain, the conference agenda promises a comprehensive exploration of market trends, business updates, manufacturing advancements, breakthrough technologies, and ongoing technical challenges. Attendees can look forward to an impressive roster of speakers, including representatives from TechInsights, Sony Semiconductor Solutions, X-FAB, Canon, Hamamatsu Ventures Europe, Meta, Harvest Imaging, Forza Silicon (Ametek Inc.), STMicroelectronics, and Gpixel, among others.

“Attending this conference is mandatory when working in the image sensor market. Great technology, great people, great conference.” – Teradyne

This year's program takes place over two days, comprising 7 key areas of focus to highlight all the latest topics and trends including:

Session 1: Market Trends & CMOS Sensor Updates

Session 2: Automotive Applications

Session 3: SWIR

Session 4: SPAD

Session 5: Depth Sensing

Session 6: Consumer & Scientific Applications

Session 7: Image Processing

“Excellent event with outstanding speakers and plenty of opportunities for networking.” – Siemens Healthineers

Already confirmed to attend the event includes representatives from SONY, Amazon, SICK IVP, Intuitive Surgical, Photon Force, Framos, SynSense AG, Taiwan Semiconductor Manufacturing Company, Nordson many more.

Tickets are priced starting at just £1,579 + VAT for full access to the two-day event.

For more information, please visit www.image-sensors.com/image-sensors-europe

An online live workshop with industry expert Albert Theuwissen will take place on 6^h March 2025. Join for just £479 + VAT to discover the recent developments in the CIS world over the last 12 months.

About Smithers

Smithers is a global leader providing B2B information services, including leading conferences and events, market reports and intelligence and strategic consulting services. Smithers also offer testing in a variety of industries, including electronics, components, tires, rubber, elastomers and polymers. For more information about Smithers, please visit www.smithers.com.

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Link: https://appleinsider.com/articles/25/01/09/apple-fights-patent-lawsuit-over-iphone-15-camera-tech

In September, Apple was the target of a patent infringement lawsuit from SiOnyx, for allegedly encroaching on patents for full-color night vision imaging sensors.

At the time, it was claimed that Apple had infringed on the patents, referred to as "Pixel Isolation Elements, Devices, and Associated Methods," discussing improvements to photosensitive devices. By using silicon-based photonics, the complaint said that companies could create smaller, lower-cost, and higher-performance photonic devices for imaging purposes.

In December, SiOnyx amended the complaint to include that Apple had pre-suit knowledge of three patents, reports Law.com. Apple also connected in May 2014 to talk about technical developments.

In an August 2017 meeting over trench isolation structures and black silicon technology, as mentioned in the patents, SiOnyx also shared a presentation with Apple employees.

On January 8, Apple responded to the complaint by filing a motion to strike some of the new allegations. Working for Apple, attorney Michael D. Strapp of DLA Piper wanted for some of the case to be dismissed, because SiOnyx failed to state a claim.

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Source: https://sifted.eu/articles/startups-went-bust-2024
 

French deeptech Prophesee developed advanced ‘neuromorphic’ computer vision technology — meaning that it aimed to imitate the structure and function of the human brain and eye. In May 2024, it announced that its technology, which is mostly intended for smartphone cameras, was available in US tech giant AMD’s products. However, in October [2024], the company, which had raised €126m in total, filed for insolvency and entered judicial recovery. It told French publication Les Echos that its next round of fundraising had taken longer than expected.

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10xEngineers invites the Imaging and Vision community to attend a Short Course on Infinite-ISP, the open-source hardware image signal processor development package at Electronic Imaging 2025.

Date: February 6, 2025 PST

Start Time: 8:30 am - 12:45 pm Pacific Time

Duration: 4 hours

The participants of the course will be taken through the entire ISP development process using the open source Infinite-ISP package. The hands-on course touches topics such as:
a.    translating a custom algorithm written in floating-point into the hardware ISP pipeline
b.    Porting a new image sensor to the hardware ISP and tuning for a new sensor
c.    utilizing the ISP to process an available dataset for Vision or AI/ Deep Learning application

Program link: https://www.imaging.org/IST/iCore/Events/Function_Display.aspx?EventKey=E25&FunctionKey=E25/SC17

Registration: https://www.imaging.org/IST/Events/EI-Registration/SignIn.aspx

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Press release: https://global.canon/en/news/2025/20250122.html

Canon develops CMOS sensor with 410 megapixels, the largest number of pixels ever achieved in a 35 mm full-frame sensor

TOKYO, January 22, 2025— Canon Inc. announced today that it has developed a CMOS sensor with 410 megapixels (24,592 x 16,704 pixels), which is the largest number1 of pixels ever achieved in a 35 mm full-frame sensor. This sensor is expected to be used in applications that demand extreme resolution in various markets including surveillance, medicine, and industry.

The newly developed CMOS sensor features a resolution equivalent to 24K (198 times greater than Full HD, and 12 times greater than 8K). This enables users to crop any part of the image captured by this sensor and enlarge it significantly while maintaining high resolution. While many CMOS sensors with a super-high pixel count are medium-format or larger, this extreme resolution sensor is compacted into a 35 mm full-frame format. This allows it to be used in combination with lenses for full-frame sensors, and it is expected to contribute to the miniaturization of shooting equipment. As data readout of a CMOS sensor tends to take longer as the number of pixels increases, achieving a CMOS sensor with a super-high pixel count requires advanced signal processing technology. The newly developed sensor employs a back-illuminated stacked formation in which the pixel segment and signal processing segment are interlayered and also includes a redesigned circuitry pattern. As a result, the sensor is capable of achieving a super-high readout speed of 3,280 megapixels per second, delivering video at 8 frames per second2.

This sensor3 also features a “four-pixel binning” function that virtually treats four adjoining pixels as one, thereby improving sensitivity and making it possible to capture brighter images. When this function is in use, the sensor can capture 100-megapixel video at 24 frames per second.

By leveraging the technology it has accumulated over many years as a leading imaging company, Canon has developed breakthrough products including CMOS sensors with super-high pixel count and ultra-sensitivity, and SPAD sensors, which detect faint traces of light even in dark areas. Canon will continue to advance its technology and contribute to the transformation and further development of society.

Additional information
The sensor is scheduled to be displayed at the Canon booth at SPIE Photonics West, a leading global conference for optics and photonics held in San Francisco from January 28-30, 2025.
 1 As of January 21, 2025 (According to a survey by Canon).
 2 Applies to both color and monochrome sensors
 3 Monochrome sensor only

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Press release: https://singularphotonics.com/singular-photonics-emerges-from-stealth-with-portfolio-of-spad-based-image-sensors/

Startup introduces range of sensors with layers of advanced computation to extract valuable information from images.

Edinburgh, UK – January 23, 2025 – Singular Photonics emerged from stealth mode today, launching a new generation of image sensors based on single photon avalanche diodes (SPADs). A spin-out from the University of Edinburgh lab of digital imaging pioneer Professor Robert Henderson, Singular is one of the first companies to bring advanced computation to SPAD-based image sensing, enabling in-pixel and cross-pixel storage and computations at the lowest light levels to reveal previously invisible details of the material world and its photon events.

The company will showcase its products for the first time at next week’s SPIE Photonics West event in San Francisco.

SPADs use the “avalanche” effect in semiconductors to convert light directly into an electrical current, without the need for cooling or amplification. While most commercial SPAD-based image sensors have been limited to time-resolved counting of photons, Singular’s core innovation lies in complex layers of computation beneath 3D-stacked SPAD sensors, comparable to the way FPGAs and GPUs revolutionized parallel computing by conducting high-speed, localized processing.

Prof Henderson leads the University of Edinburgh’s CMOS Sensors and Systems Group. In 2005, he designed one of the first SPAD image sensors in nanometer CMOS technologies, leading to the first time-of-flight sensors in 2013, which today perform an autofocus-assist feature in more than a billion smartphones worldwide.

“There can be no doubt that SPAD sensors are the future of digital imaging, but their use to date in commercial devices hasn’t extended much beyond time-resolved counting of photons,” said Prof Henderson. “Computational cleverness can be the difference. We are building next-generation imaging sensors, where the computation is done digitally at the pixel level – exactly where the photons arrive.”
Simultaneously capturing depth and temporal dimensions to generate 4D images that provide deep, data-rich insights, Singular’s noiseless sensors enable more information to be extracted from light, supporting applications ranging from consumer and automotive electronics to the scientific and medical fields. The company’s approach transforms SPAD sensors into 3D stacked computational engines capable of performing a wide range of sophisticated tasks, such as real-time photon counting, timing, and advanced processing techniques, including in-pixel histograms, statistical analysis and autocorrelation.

Singular is launching with two sensors, both of which are available today:
 
Andarta, developed in collaboration with tech giant Meta, has a miniature form factor combined with high sensitivity, and is optimized for use in a number of medical imaging modalities. The sensor supports multiple modes of operation including in-pixel autocorrelation measurements, and represents a significant step closer to SPAD integration in the wearables space. For example, Andarta enables monitoring of the rate of cerebral blood flow, monitoring rapid fluctuations in light as it passes through tissue, at depths not currently possible with current sensors.

 Sirona, the company’s first product, is a 512 pixel SPAD-based line sensor capable of time-correlated single photon counting (TCSPC) and enabling Raman spectroscopy, fluorescence lifetime imaging microscopy (FLIM), time-of-flight, and quantum applications. With on-chip histogramming and time binning capability, the sensor has the potential to revolutionize spectroscopy applications.
Singular has already inked multiple deals for its sensors with some of the world’s leading instrumentation companies, and expects to announce more collaborations in 2025.

 “We are in a unique position where we already have commercially available products and are generating revenue in our first year of incorporation,” said Shahida Imani, CEO of Singular Photonics. “With new, even more advanced sensors coming to the market in 2025, we are well positioned to lead the SPAD-driven imaging revolution.”

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Prof. Eric Fossum received the National Medal of Technology and Innovation at the White House on Jan 3, 2025, receiving the highest honor for technological achievement in the US.

The press briefing is no longer available [as of Jan 23, 2025, 12:00am Eastern Time]: https://www.whitehouse.gov/briefing-room/statements-releases/2025/01/03/president-biden-honors-nations-leading-scientists-technologists-and-innovators/

An archived version from Wayback Machine is available here: https://web.archive.org/web/20250104020214/https://www.whitehouse.gov/briefing-room/statements-releases/2025/01/03/president-biden-honors-nations-leading-scientists-technologists-and-innovators/

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Article (in German): https://www.pcgameshardware.de/Wissenschaft-Thema-237118/News/Fuer-Kameras-Sony-stapelt-Farb-Tiefensensor-keine-Verzerrungen-mehr-1462040/

English translation from Google Translate (with some light editing) below:

Depth sensors, which provide an image with spatial information, have become increasingly widespread in recent years. They can be used, for example, to create 3D scans or for targeted, subsequent blur effects - for example in smartphone cameras. In most cases, so-called ToF sensors (Time of Flight) are used, in which each pixel is measured when previously radiated infrared light is reflected back.

Not next to each other, but on top of each
So far, however, there has been a problem in the implementation in combination with normal camera sensors. Either the ToF sensor is located next to the camera sensor. Then there are are concealed areas through the different angles, but above all on edges, and not every color value can be assigned a depth value. Or ToF and color pixels sit on the same sensor and take away the space from each other. In other words: The resolution is reduced.

However, the camera division of Sony now claims to have found a way out. At the IEDM 2024 semiconductor trade fair, a combination sensor was presented in which the camera sensor is located directly above the depth sensor. This is made possible by the use of a new material: normally the color pixels would be located on silicon, but the broadband light would be absorbed and thus the depth pixels covered. However, Sony has apparently solved this problem by means of a new construction on a broadband transparent, organic photo-leading film. Visible wavelength hits the color sensors, while infrared light falls further down on the IR pixels of the ToF sensor.

Above each ToF pixel, which each occupies 4um, there are four RGB pixels with 1um each. In total, there is talk of a resolution of 1004 x 756 pixels for the depth map and 4016 x 3024 pixels for the color image. At least in this respect, the prototype has apparently already reached a usable area.

However, it is still unclear whether and when corresponding sensors should go into mass production. However, if Sony can potentially eliminate existing problems, the wide availability of such a sensor would offer numerous options. For example, you could simplify the creation of high-resolution 3D scans for games and movies and also make the data collection of robots significantly more reliable.

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Open access link: https://ieeexplore.ieee.org/document/10742005

Abstract:  New applications like depth measurements or multispectral imaging require to develop image sensors able to sense efficiently in the Near Infrared and Short-Wave Infrared where silicon is weakly sensitive. Colloidal Quantum Dots (CQD) technology is an interesting candidate to address these new applications as it allows to develop image sensors with high quantum efficiency at excitonic peak and high-resolution images. In this paper, we present an electrical model describing the electrical behavior of a designed and manufactured CQD photodiode. We use this model to explore a different architecture collecting holes instead of electrons. This architecture allows to control the charge collection inside the CQD thin film through the electric field. This property enables to implement global shutter functionality, to bin charges from several photodiodes, or to operate two physically interleaved photodiodes arrays alternatively with different types of pixel circuitries. These operating modes extend the capabilities of CQD image sensors in terms of applications.

Overview of the CQD thin film properties.

(a) Electron microscopy cross section of the characterized photodiode [16] (b) Scheme of the simulated device for electrons collection (c) CQD photodiode process flow [16].

(a) CQD photodiode absorption spectrum (b) Current vs Voltage CQD photodiode characteristic – experiment vs simulation.

(a) Scheme of the simulated device for holes collection (b) Band diagram of the photodiode varying the voltage of the bottom electrode (c) Physical phenomena explaining the photodiode current vs voltage characteristic.

Current vs Voltage characteristics vs (a) CQD thin film holes mobility (b) carriers lifetime (c) CQD thin film electron affinity (d) ETL electron affinity (e) HTL electron affinity Turn-on bias vs (f) CQD thin film holes mobility (g) carriers lifetime (h) CQD thin film electron affinity (i) HTL electron affinity.

(a) Scheme of the multi-electrodes device working principle (b) Multi-electrodes photodiode architecture for holes collection control alternating collection on pixels A (top image) and collection on pixel B (bottom image).

Electrostatic potential and band diagrams explaining the carriers’ collection control for: (a) electrons collecting photodiodes (b) holes collecting photodiodes.

Current-Voltage characteristics explaining the carriers’ collection control for: (a) electrons collecting photodiodes (b) holes collecting photodiodes.

Electric field for photodiodes with central bottom electrode biased and various bottom electrodes’ widths.

Current-Voltage characteristics of the collecting and non-collecting electrodes at various illuminations.

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From optics.org news: https://optics.org/news/15/12/28

imec group launches SWIR sensor with lead-free quantum dot photodiodes

Technology is a step toward “greener” IR imagers for autonomous driving, medical diagnostics.

Last week, at the 2024 IEEE International Electron Devices Meeting, in San Francisco, imec, a research and innovation hub in nanoelectronics and digital technologies, and its partners in the Belgian project Q-COMIRSE, presented the first prototype shortwave infrared image (SWIR) sensor based on indium arsenide quantum dot photodiodes.

The sensor demonstrated successful 1390 nm imaging results, offering an environmentally-friendly alternative to first-generation quantum dots that contain lead, which limited their widespread manufacturing. The proof-of-concept is a critical step toward mass-market infrared imaging with low-cost and non-toxic photodiodes.

By detecting wavelengths beyond the visible spectrum, SWIR sensors can provide enhanced contrast and detail, as materials reflect differently in this range.

Face recognition and eye-tracking

These sensors can distinguish objects that appear identical to the human eye and penetrate through fog or mist, suiting them to applications such as face recognition or eye-tracking in consumer electronics, and autonomous vehicle navigation. While current versions are costly and limited to high-end applications, wafer-level integration promises broader accessibility.

Tuned for SWIR, quantum dots offer compact, low-cost absorbers, since integration into CMOS circuits and existing manufacturing processes is possible. However, first-generation QDs often contain toxic heavy metals such as lead and mercury, and the search for alternatives continues.

At 2024 IEDM, imec and its partners within the Q-COMIRSE project (Ghent University, QustomDot BV, ChemStream BV and ams OSRAM) presented a SWIR image sensor featuring a lead-free quantum dot alternative as absorber; indium arsenide (InAs). The proof-of-concept sensor, tested on both glass and silicon substrates, was the first of its kind to produce successful 1390 nm imaging results, imec announced.

Pawel Malinowski, imec technology manager and domain lead imaging, emphasized the significance of the achievement: “The first generation of QD sensors was crucial for showcasing the possibilities of this flexible platform. We are now working towards a second generation that will serve as a crucial enabler for the masses, aiming at cost-efficient manufacturing in an environmentally friendly way,” he said.

“With major industry players looking into quantum dots, we are committed to further refine this semiconductor technology towards accessible, compact, multifunctional image sensors with new functionalities.”

Stefano Guerrieri, Engineering Fellow at ams Osram, added, “Replacing lead in colloidal quantum dots with a more environmentally friendly material was our key goal in Q-COMIRSE. Our remarkable development work with imec and the others paves the way toward a low-cost and lead-free SWIR technology that, once mature for industrial products, could enable unprecedented applications in robotics, automotive, AR/VR and consumer electronics among others.”

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From optics.org news: https://optics.org/news/15/12/28

imec group launches SWIR sensor with lead-free quantum dot photodiodes

Technology is a step toward “greener” IR imagers for autonomous driving, medical diagnostics.

Last week, at the 2024 IEEE International Electron Devices Meeting, in San Francisco, imec, a research and innovation hub in nanoelectronics and digital technologies, and its partners in the Belgian project Q-COMIRSE, presented the first prototype shortwave infrared image (SWIR) sensor based on indium arsenide quantum dot photodiodes.

The sensor demonstrated successful 1390 nm imaging results, offering an environmentally-friendly alternative to first-generation quantum dots that contain lead, which limited their widespread manufacturing. The proof-of-concept is a critical step toward mass-market infrared imaging with low-cost and non-toxic photodiodes.

By detecting wavelengths beyond the visible spectrum, SWIR sensors can provide enhanced contrast and detail, as materials reflect differently in this range.

Face recognition and eye-tracking

These sensors can distinguish objects that appear identical to the human eye and penetrate through fog or mist, suiting them to applications such as face recognition or eye-tracking in consumer electronics, and autonomous vehicle navigation. While current versions are costly and limited to high-end applications, wafer-level integration promises broader accessibility.

Tuned for SWIR, quantum dots offer compact, low-cost absorbers, since integration into CMOS circuits and existing manufacturing processes is possible. However, first-generation QDs often contain toxic heavy metals such as lead and mercury, and the search for alternatives continues.

At 2024 IEDM, imec and its partners within the Q-COMIRSE project (Ghent University, QustomDot BV, ChemStream BV and ams OSRAM) presented a SWIR image sensor featuring a lead-free quantum dot alternative as absorber; indium arsenide (InAs). The proof-of-concept sensor, tested on both glass and silicon substrates, was the first of its kind to produce successful 1390 nm imaging results, imec announced.

Pawel Malinowski, imec technology manager and domain lead imaging, emphasized the significance of the achievement: “The first generation of QD sensors was crucial for showcasing the possibilities of this flexible platform. We are now working towards a second generation that will serve as a crucial enabler for the masses, aiming at cost-efficient manufacturing in an environmentally friendly way,” he said.

“With major industry players looking into quantum dots, we are committed to further refine this semiconductor technology towards accessible, compact, multifunctional image sensors with new functionalities.”

Stefano Guerrieri, Engineering Fellow at ams Osram, added, “Replacing lead in colloidal quantum dots with a more environmentally friendly material was our key goal in Q-COMIRSE. Our remarkable development work with imec and the others paves the way toward a low-cost and lead-free SWIR technology that, once mature for industrial products, could enable unprecedented applications in robotics, automotive, AR/VR and consumer electronics among others.”

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