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Kim et al. from imec and coauthors from universities in Belgium and Korea recently published a paper titled "A Thin-Film Pinned-Photodiode Imager Pixel with Fully Monolithic Fabrication and beyond 1Me- Full Well Capacity" in MDPI Sensors. This paper describes imec's recent thin film pinned photodiode technology.

Open access paper link: https://www.mdpi.com/1424-8220/23/21/8803

Abstract
Thin-film photodiodes (TFPD) monolithically integrated on the Si Read-Out Integrated Circuitry (ROIC) are promising imaging platforms when beyond-silicon optoelectronic properties are required. Although TFPD device performance has improved significantly, the pixel development has been limited in terms of noise characteristics compared to the Si-based image sensors. Here, a thin-film-based pinned photodiode (TF-PPD) structure is presented, showing reduced kTC noise and dark current, accompanied with a high conversion gain (CG). Indium-gallium-zinc oxide (IGZO) thin-film transistors and quantum dot photodiodes are integrated sequentially on the Si ROIC in a fully monolithic scheme with the introduction of photogate (PG) to achieve PPD operation. This PG brings not only a low noise performance, but also a high full well capacity (FWC) coming from the large capacitance of its metal-oxide-semiconductor (MOS). Hence, the FWC of the pixel is boosted up to 1.37 Me- with a 5 μm pixel pitch, which is 8.3 times larger than the FWC that the TFPD junction capacitor can store. This large FWC, along with the inherent low noise characteristics of the TF-PPD, leads to the three-digit dynamic range (DR) of 100.2 dB. Unlike a Si-based PG pixel, dark current contribution from the depleted semiconductor interfaces is limited, thanks to the wide energy band gap of the IGZO channel material used in this work. We expect that this novel 4 T pixel architecture can accelerate the deployment of monolithic TFPD imaging technology, as it has worked for CMOS Image sensors (CIS).

Figure 1. Pixel cross-section for the monolithic TFPD image sensor (a) 3 T and (b) 4 T (TF-PPD) structure (TCO: transparent conductive oxide, HTL: hole transport layer, PG: photogate, TG: transfer gate, FD: floating diffusion). Electric potential and signal readout configuration for 3 T pixel (c) and for 4 T pixel (d). Pixel circuit diagram for 3 T pixel (e) and for the 4 T pixel (f).

Figure 2. I-V characteristic of QDPD test structure (a) and of IGZO TFT (b), a micrograph of the TF-PPD passive pixel array (c), and its measurement schematic (d). Band diagrams for the PD (e) and PG (f).

Figure 3. Silvaco TCAD simulation results; (a) simulated structure, (b) lateral potential profile along the IGZO layer, and (c) potential profile when TG is turned off and (d) on.

Figure 4. Signal output vs. integration time with different VPG and VTG values with the illumination. Signal curves with the fixed VTG (−1 V), varying VPG (−4~−1 V) (a), the same graphs for the fixed VPG (−2 V), and different VTGs (−6.5~−1 V) (b).

Figure 4. Signal output vs. integration time with different VPG and VTG values with the illumination. Signal curves with the fixed VTG (−1 V), varying VPG (−4~−1 V) (a), the same graphs for the fixed VPG (−2 V), and different VTGs (−6.5~−1 V) (b).

Figure 5. (a) Pixel output vs. integration time for different pixel pitches. (b) FWC comparison between estimation and measurement.

Figure 6. FWC comparison by different pixel fill factors. Pixel schematics for different shapes (a), and FWC by different pixel shapes and pitches (b).

Figure 7. Potential diagram describing FWC increase by the larger VPG (a), and FWC vs. VPG (b).

Figure 8. Passive pixel dark current (a) and Arrhenius plots (b) for the QDPD test structure and the passive pixel.

Figure 9. FWC vs. pixel area. A guideline showing the FWC density per unit area for this work (blue) and a trend line for the most of CISs (red).

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Full article: https://www.eetimes.eu/imec-taps-pinned-photodiode-to-build-a-better-swir-sensor/

Imec Taps Pinned Photodiode to Build a Better SWIR Sensor

‘Monolithic hybrid’ prototype integrates PPD into the TFT structure to lower the cost of light detection in the nonvisible range, with improved noise performance. 

Silicon-based image sensors can detect light within a limited range of wavelengths and thus have limitations in applications like automotive and medical imaging. Sensors that can capture light beyond the visible range, such as short-wave infrared (SWIR), can be built using III-V materials, which combine such elements as gallium, indium, aluminum and phosphorous. But while those sensors perform well, their manufacture requires a high degree of precision and control, increasing their cost.

Research into less expensive alternatives has yielded thin-film absorbers such as quantum-dot (QD) and other organic photodiode (OPD) materials that are compatible with the CMOS readout circuits found in electronic devices, an advantage that has boosted their adoption for IR detection. But thin-film absorbers exhibit higher levels of noise when capturing IR light, resulting in lower image quality. They are also known to have lower sensitivity to IR.

The challenge, then, is to design a cost-effective image sensor that uses thin-film absorbers but offers better noise performance. Imec has taken aim at the problem by revisiting a technology that was first used in the 1980s to improve noise in early CMOS image sensors: the pinned photodiode (PPD).
The PPD structure’s ability to completely remove electrical charges before starting a new capture cycle makes it an efficient approach, as the sensor can reset without unwanted background noise (kTC noise) or any lingering influence from the previous image frame. PPDs quickly became the go-to choice for consumer-grade silicon-based image sensors. Their low noise and high power efficiency made them a favorite among camera manufacturers.

Researchers at imec integrated a PPD structure into thin-film–transistor (TFT) image sensors to yield a hybrid prototype. The sensor structure also uses imec’s proprietary indium gallium zinc oxide (IGZO) technology for electron transport.

“You can call such systems ‘monolithic hybrid’ sensors, where the photodiode is not a part of the CMOS circuit [as in CMOS image sensors, in which silicon is used for light absorption], but is formed with another material as the photoactive layer,” Pawel Malinowski, Pixel Innovations program manager at imec, told EE Times Europe. “The spectrum this photodiode captures is something separate … By introducing an additional thin-film transistor in between, it enables separation of the storage and readout nodes, making it possible to fully deplete the photodiode and transfer all charges to the readout, [thereby] preventing the generation of kTC noise and reducing image lag.”

Unlike the conventional thin-film-based pixel architecture, imec’s TFT hybrid PPD structure introduces a separate thin-film transistor (TFT) to the design, which acts as a transfer gate and a photogate—in other words, it functions as a middleman. Here, imec’s IGZO technology serves as an effective electron transport layer, as it has higher electron mobility. Also acting as the gate dielectric, it contributes to the performance of the sensor by controlling the flow of charges and enhancing absorption characteristics.
With the new elements strategically placed within the traditional PDD structure, the prototype 4T image sensor showed a low readout noise of 6.1e-, compared to >100e- for the conventional 3T sensor, demonstrating its superior noise performance, imec stated. Because of IGZO’s large bandgap, the TFT hybrid PPD structure also entails lower dark current than traditional CMOS image sensors. This means the image sensor can capture infrared images with less noise, less distortion or interference and more accuracy and detail, according to imec

Figure 1: Top (a) and cross-sectional (b) view of structure of TF-PPD pixels

By using thin-film absorbers, imec’s prototype image sensor can detect at SWIR wavelengths and beyond, imec said. Image sensors operating in the near-infrared range are already used in automotive applications and consumer apps like iPhone Face ID. Going to longer wavelengths, such as SWIR, enables better transmission through OLED displays, which leads to better “hiding” of the components behind the screen and reduction of the “notch.”

Malinowski said, “In automotive, going to longer wavelengths can enable better visibility in adverse weather conditions, such as visibility through fog, smoke or clouds, [and achieve] increased contrast of some materials that are hard to distinguish against a dark background—for example, high contrast of textiles against poorly illuminated, shaded places.” Using the thin-film image sensor could make intruder detection and monitoring in dark conditions more effective and cost-efficient. It could also aid in medical imaging, which uses SWIR to study veins, blood flow and tissue properties.

Looking ahead, imec plans to diversify the thin-film photodiodes that can be used in the proposed architecture. The current research has tested for two types of photodiodes: a photodiode sensitive to near-infrared and a QD photodiode sensitive to SWIR.

“Current developments were focused on realizing a proof-of-concept device, with many design and process variations to arrive at a generic module,” Malinowski said. “Further steps include testing the PPD structure with different photodiodes—for example, other OPD and QDPD versions. Furthermore, next-generation devices are planned to focus on a more specific use case, with a custom readout suitable for a particular application.

“SWIR imaging with quantum dots is one of the avenues for further developments and is also a topic with high interest from the imaging community,” Malinowski added. “We are open to collaborations with industrial players to explore and mature this exciting sensor technology.”

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Press release: https://www.onsemi.com/company/news-media/press-announcements/en/onsemi-introduces-lowest-power-image-sensor-family-for-smart-home-and-office

onsemi Introduces Lowest Power Image Sensor Family for Smart Home and Office 

Hyperlux LP Image Sensors can extend battery life by up to 40%¹

What's New: Today onsemi introduced the Hyperlux LP image sensor family ideally suited for industrial and commercial cameras such as smart doorbells, security cameras, AR/VR/XR headsets, machine vision and video conferencing. These 1.4 µm pixel sensors deliver industry-leading image quality and low power consumption while maximizing performance to capture crisp, vibrant images even in difficult lighting conditions.

The product family also features a stacked architecture design that minimizes its footprint and at its smallest approaches the size of a grain of rice, making it ideal for devices where size is critical. Depending on the use case, customers can choose between the 5-megapixel AR0544, the 8-megapixel AR0830 or the 20-megapixel AR2020.

Why It Matters: Home and business owners continue to choose cameras to protect themselves more than any other security measure, with the market expected to triple by the end of the decade.² As a result, consumers are demanding devices that offer better image quality, reliability and longer battery life to improve the overall user experience.

With the image sensors, cameras can deliver clearer images and more accurate object detection even in harsh weather and lighting conditions. Additionally, these cameras are often placed in locations that can be difficult to access to replace or recharge batteries, making low power consumption a critical feature.

How It Works: The Hyperlux LP family is packed with features and proprietary technologies that optimize performance and resolution including:

•  Wake on Motion – Enables the sensors to operate in a low-power mode that draws a fraction of the power needed in the full-performance mode. Once the sensor detects movement, it moves to a higher performance state in less time than it takes to snap a photo.
•  Smart ROI – Delivers more than one region of interest (ROI) to give a context view of the scene at reduced bandwidth and a separate ROI in original detail.
•  Near-Infrared (NIR) Performance – Delivers superior image quality due to the innovative silicon design and pixel architecture, with minimal supplemental lighting.
•  Low Power – Reduces thermal noise which negatively impacts image quality and eliminates the need for heat sinks, reducing the overall cost of the vision system.

Supporting Quotes:
“By leveraging our superior analog design and pixel architecture, our sensors elevate the two most important elements people consider when buying a device, picture quality and battery life. Our new image sensor family delivers performance that matters with a significantly increased battery life and exquisite, highly detailed images,” said Ross Jatou, senior vice president and general manager, Intelligent Sensing Group, onsemi.

In addition to smart home devices, one of the other applications the Hyperlux LP family can improve is the office meeting experience with more intuitive, seamless videoconferencing solutions.
“Our video collaboration solutions require high-quality image sensors that bring together multiple factors for the best user experience. The superior optical performance, innovative features and extremely low power consumption of the Hyperlux LP image sensors enable us to deliver a completely immersive virtual meeting experience in highly intelligent and optimized videoconferencing systems,” said Ashish Thanawala, Sr. Director of Systems Engineering, Owl Labs.

What's Next: The Hyperlux LP Image Sensor Family will be available in the fourth quarter of 2023.

More Information:
 Learn more about the AR2020, the AR0830 and the AR0544.
 Read the blog: A Closer Look - Hyperlux LP Image Sensors

¹ Based on internal tests conducted under specific conditions. Actual results may vary based on device, usage patterns, and other external factors.
² Status of the CMOS Image Sensor Industry, Yole Intelligence Report, 2023.

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In this invited talk at ESSCIRC 2023, Dr. Pellegrini shares her insights on circuits and sensor design through her research career at Politecnico Milano, Heriot Watt and now at STMicro. The lecture covers basics of LiDAR and SPAD sensors, and various design challenges such as low signal strength and background illumination.

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Imaging Time: Cameras for the Fourth Dimension

Abstract
Time is often considered as the fourth dimension, along with the length, width and depth that form the fabric of space-time. Conventional cameras observe only two of those dimensions inferring depth from spatial cues and record time only coarsely relative to many fast phenomena in the natural world. In this talk, I will introduce the concept of time cameras, devices based on single photon avalanche diodes (SPADs) that can record the time dimension of a scene at the picosecond scales commensurate with the speed of light. This talk will chart 2 decades of my research into these devices which have seen their transformation from a research curiosity to a mainstream semiconductor technology with billions of SPAD devices in consumer use in mobile phones for depth sensing autofocus-assist. We will illustrate the talk with videos and demonstrations of ultrafast SPAD cameras developed at the University of Edinburgh. I am proud that my group’s research maintains the University position at forefront of imaging technology which has transformed our lives, seeing the transition from chemical film to digital cameras, the omnipresence of camera phones and video meetings. In the near future, SPAD-based time cameras can also be expected to play a major societal role, within optical radars (LIDARs) for robotic vision and driverless cars, surgical guidance for cancer and perhaps even to add two further dimensions to the phone camera in your pocket!

Biography
Robert K. Henderson is a Professor of Electronic Imaging in the School of Engineering at the University of Edinburgh. He obtained his PhD in 1990 from the University of Glasgow. From 1991, he was a research engineer at the Swiss Centre for Microelectronics, Neuchatel, Switzerland. In 1996, he was appointed senior VLSI engineer at VLSI Vision Ltd, Edinburgh, UK where he worked on the world’s first single chip video camera. From 2000, as principal VLSI engineer in STMicroelectronics Imaging Division he developed image sensors for mobile phone applications. He joined University of Edinburgh in 2005, designing the first SPAD image sensors in nanometer CMOS technologies in the MegaFrame and SPADnet EU projects. This research activity led to the first volume SPAD time-of-flight products in 2013 in the form of STMicroelectronics FlightSense series, which perform an autofocus-assist now present in over 1 billion smartphones. He benefits from a long-term research partnership with STMicroelectronics in which he explores medical, scientific and high speed imaging applications of SPAD technology. In 2014, he was awarded a prestigious ERC advanced fellowship. He is an advisor to Ouster Automotive and a Fellow of the IEEE and the Royal Society of Edinburgh.

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The 69th annual IEEE International Electron Devices Meeting (IEDM) will be held in San Francisco Dec. 9-13. This year there are three sessions dealing with advanced image sensing topics. You can find summaries of all of these papers by going here (https://submissions.mirasmart.com/IEDM2023/Itinerary/EventsAAG.aspx) and then clicking on the relevant sessions and papers within each one:
 
Session #8 on Monday, Dec. 11 is “Advanced Photonics for Image Sensors and High-Speed Communications.” It features six papers describing advanced photonics for image sensors and high speed communications. The first three deal with device and integration concepts for sub-diffraction color filters targeting imaging key performance indicators, while the second three deal with devices and technologies for high speed communication systems.

1.  IMEC will describe a novel sub-micron integration approach to color-splitting, to match human eye color sensitivity.
2.  VisEra Technologies will describe the use of nano-light pillars to improve the quantum efficiency and signal-to-noise ratio (SNR) of color filters on CMOS imaging arrays under low-light conditions.
3.  Samsung will detail a metasurface nano-prism structure for wide field-of-view lenses, demonstrating 25% higher sensitivity and 1.2 dB increased SNR vs. conventional micro-lenses.
4.  National University of Singapore will describe the integration of ferroelectric material into a LiNbO3-on-insulator photonic platform, demonstrating non-volatile memory and high-efficiency modulators with an efficiency of 66 pm/V.
5.  IHP will discuss the first germanium electro-optical modulator operating at 100 GHz in a SiGe BiCMOS photonics technology.
6.  An invited paper from Intel will discuss the first 256 Gbps WDM transceiver with eight 200 GHz-spaced wavelengths simultaneously modulated at 32 Gbps, and with a bit-error-rate less than 1e-12.

 
Session #20 on Tuesday, Dec. 12 is Emerging Photodetectors. It features five papers describing recent developments in emerging photodetectors spanning the MIR to the DUV spectral range, and from group IV and III-V sensors to organic detectors.

1.  The first paper by KAIST presents a fully CMOS-compatible Ge-on-Insulator platform for detection of wavelengths beyond 4 µm.
2.  The second paper by KIST (not a typo) presents a new record-low-jitter SPAD device integrated into a CIS process technology, covering a spectral range of visible up to NIR.
3.  The third paper by KAIST describes a wavelength-tunable detection device combining optical gratings and phase-change materials, reaching wavelengths up to 1700 nm.
4.  The University of Science and Technology of China will report on a dual-function tunable emitter and NIR photodetector combination based on III-V GaN/AlGaN nanowires on silicon.
5.  An invited paper from France’s CNRS gives an overview on next-generation sustainable organic photodetectors and emitters.

 
Session #40 on Wednesday, Dec. 13 features six papers describing the most recent advances in image sensors.

1.  Samsung will describe a 0.5 µm pixel, 3 layers-stacked, CMOS image sensor (CIS) with in-pixel Cu-Cu bonding technology featuring improved conversion gain and noise.
2.  Omnivision will present a 2.2 µm-2 layer stacked high dynamic range VDGS CIS with 1x2 shared structure offering dual conversion gain and achieving low FPN.
3.  STMicroelectronics will describe a 2.16 µm 6T BSI VDGS CIS using deep trench capacitors and achieving 90 dB dynamic range using spatially-split exposure.
4.  Meta will describe a 2 megapixel - 4.23 µm pixel pitch - offering block-parallel A/D architecture and featuring programmable sparse-capture with a fine grain gating scheme for power saving.
5.  Canon will introduce a new twisted photodiode CIS structure - 6 µm pixel pitch - enabling all-directional autofocus for high speed and accuracy and 95 dB DR.
6.  Shanghai Jiao Tong University will present a 64x64-pixel organic imager prototype, based on a novel hole transporting layer (HTL)-free structure achieving the highest recorded low-light performance.

 
Full press release about the conference is below.

2023 IEEE International Electron Devices Meeting to Highlight Advances in Critical Semiconductor Technologies with the Theme, “Devices for a Smart World Built Upon 60 Years of CMOS”

Four Focus Sessions on topics of intense research interest:

•  3D Stacking for Next-Generation Logic & Memory by Wafer Bonding and Related Technologies
•  Logic, Package and System Technologies for Future Generative AI
•  Neuromorphic Computing for Smart Sensors
•  Sustainability in Semiconductor Device Technology and Manufacturing

 
SAN FRANCISCO, CA – Since it began in 1955, the IEEE International Electron Devices Meeting (IEDM) has been where the world’s best and brightest electronics technologists go to learn about the latest breakthroughs in semiconductor and related technologies. That tradition continues this year, when the 69th annual IEEE IEDM conference takes place in-person December 9-13, 2023 at the Hilton San Francisco Union Square hotel, with online access to recorded content available afterward.
 
The 2023 IEDM technical program, supporting the theme, “Devices for a Smart World Built Upon 60 Years of CMOS,” will consist of more than 225 presentations plus a full slate of panels, Focus Sessions, Tutorials, Short Courses, a career luncheon, supplier exhibit and IEEE/EDS award presentations.
 
“The IEDM offers valuable insights into where the industry is headed, because the leading-edge work presented at the conference showcases major trends and paradigm shifts in key semiconductor technologies,” said Jungwoo Joh, IEDM 2023 Publicity Chair and Process Development Manager at Texas Instruments. “For example, this year many papers discuss ways to stack devices in 3D configurations. This is of course not new, but two things are especially noteworthy about this work. One is that it isn’t just happening with conventional logic and memory devices, but with sensors, power, neuromorphic and other devices as well. Also, many papers don’t describe futuristic laboratory studies, but rather specific hardware demonstrations that have generated solid results, opening pathways to commercial feasibility.”
 
“Finding the right materials and device configurations to develop transistors that will perform well with acceptable levels of reliability remains a key challenge,” said Kang-ill Seo, IEDM 2023 Publicity Vice Chair and Vice President, Semiconductor R&D, Samsung Semiconductor. “This year’s program shows that electrothermal considerations remain a key focus, particularly with attempts to add functionality to a chip’s interconnect, or wiring, which is fabricated using low-temperature processes.”
 
Here are details of the 2023 IEEE International Electron Devices Meeting:
 
Tutorial Sessions – Saturday, Dec. 9
The Saturday tutorial sessions on emerging technologies are presented by experts in the field to bridge the gap between textbook-level knowledge and leading-edge current research, and to introduce attendees to new fields of interest. There are three time slots, each with two tutorials running in parallel:
1:30 p.m. - 2:50 p.m.
• Innovative Technology for Beyond 2 nm, Matthew Metz, Intel
• CMOS+X: Functional Augmentation of CMOS for Next-Generation Electronics, Sayeef Salahuddin, UC-Berkeley
3:05 p.m. - 4:25 p.m.
• Reliability Challenges of Emerging FET Devices, Jacopo Franco, Imec
• Advanced Packaging and Heterogeneous Integration - Past, Present & Future, Madhavan Swaminathan, Penn State
4:40 p.m. - 6:00 p.m.
• Synapses, Circuits, and Architectures for Analog In-Memory Computing-Based Deep Neural Network Inference Hardware Acceleration, Irem Boybat, IBM
• Tools for Device Modeling: From SPICE to Scientific Machine Learning, Keno Fischer, JuliaHub
 
Short Courses – Sunday, Dec. 10
In contrast to the Tutorials, the full-day Short Courses are focused on a single technical topic. They offer the opportunity to learn about important areas and developments, and to network with global experts.

• Transistor, Interconnect, and Chiplets for Next-Generation Low-Power & High-Performance Computing, organized by Yuri Y. Masuoka, Samsung

•  Advanced Technology Requirement for Edge Computing, Jie Deng, Qualcomm
•  Process Technology toward 1nm and Beyond, Tomonari Yamamoto, Tokyo Electron
•  Empowering Platform Technology with Future Semiconductor Device Innovation, Jaehun Jeong, Samsung
•  Future Power Delivery Process Architectures and Their Capability and Impact on Interconnect Scaling, Kevin Fischer, Intel
•  DTCO/STCO in the Era of Vertical Integration, YK Chong, ARM
•  Low Power SOC Design Trends/3D Integration/Packaging for Mobile Applications, Milind Shah, Google

 
• The Future of Memory Technologies for High-Performance Memory and Computing, organized by Ki Il Moon, SK Hynix

•  High-Density and High-Performance Technologies for Future Memory, Koji Sakui, Unisantis Electronics Singapore/Tokyo Institute of Technology
•  Advanced Packaging Solutions for High Performance Memory and Compute, Jaesik Lee, SK Hynix
•  Analog In-Memory Computing for Deep Learning Inference, Abu Sebastian, IBM
•  The Next Generation of AI Architectures: The Role of Advanced Packaging Technologies in Enabling Heterogeneous Chiplets, Raja Swaminathan, AMD
•  Key Challenges and Directional Path of Memory Technology for AI and High-Performance Computing, Keith Kim, NVIDIA
•  Charge-Trapping Memories: From the Fundamental Device Physics to 3D Memory Architectures (3D NAND, 3D NOR, 3D DRAM) and Computing in Memory (CIM), Hang-Ting (Oliver) Lue, Macronix

 
Plenary Presentations – Monday, Dec. 11

•  Redefining Innovation: A Journey forward in the New Dimension Era, Siyoung Choi, President & GM, Samsung Foundry Business, Device Solutions Division
•  The Next Big Thing: Making Memory Magic and the Economics Beyond Moore's Law, Thy Tran, Vice President of Global Frontend Procurement, Micron
•  Semiconductor Challenges in the 5G and 6G Technology Platforms, Björn Ekelund, Corporate Research Director, Ericsson

 
Evening Panel Session – Tuesday evening, Dec. 12
The IEDM evening panel session is an interactive forum where experts give their views on important industry topics, and audience participation is encouraged to foster an open exchange of ideas. This year’s panel will be moderated by Dan Hutcheson, Vice Chair at Tech Insights.

•  AI: Semiconductor Catalyst? Or Disrupter? Artificial Intelligence (AI) has long been a hot topic. In 2023 it became super-heated when large language models became readily available to the public. This year’s IEDM will not rehash what’s been dragged through media. Instead, it will bring together industry experts to have a conversation about how AI is changing the semiconductor industry and to ask them how they are using AI to transform their efforts. The topics will be wide-ranging, from how AI will drive demand for semiconductors, to how it’s changing design and manufacturing, and even to how it will change the jobs and careers of those working in it.

 
Luncheon – Tuesday, Dec. 12
There will be a career-focused luncheon featuring industry and scientific leaders talking about their personal experiences in the context of career growth. The discussion will be moderated by Jennifer Zhao, President/CEO, asm OSRAM USA Inc. The speakers will be:

•  Ilesanmi Adesida, University Provost and Acting President, Nazarbayev University, Kazakhstan -- Professor Ilesanmi Adesida is a scientist/engineer and an experienced administrator in both scientific and educational circles, with more than 350 peer-reviewed articles/250 presentations at international conferences.
•  Isabelle Ferain, Vice-President of Technology Development, GlobalFoundries -- Dr. Ferain oversees GF’s technology development mission in its 300mm fabs in the US and Europe.

 
Vendor Exhibition/MRAM Poster Session/MRAM Global Innovation Forum

•  A vendor exhibition will be held once again.
•  A special poster session dedicated to MRAM (magnetoresistive RAM memory) will take place during the IEDM on Tuesday, Dec. 12 from 2:20 pm to 5:30 p.m., sponsored by the IEEE Magnetics Society.
•  Also sponsored by the IEEE Magnetics Society, the 15th MRAM Global Innovation Forum will be held in the same venue after the IEDM conference concludes, on Thursday, Dec. 14.

 
For registration and other information, visit www.ieee-iedm.org.
 
Follow IEDM via social media

•  Twitter: https://twitter.com/ieee_iedm
•  LinkedIn: https://www.linkedin.com/groups/7475096/
•  Facebook: https://www.facebook.com/IEEE.IEDM

 
About IEEE & EDS
IEEE is the world’s largest technical professional organization dedicated to advancing technology for the benefit of humanity. Through its highly cited publications, conferences, technology standards, and professional and educational activities, IEEE is the trusted voice on a wide variety of areas ranging from aerospace systems, computers, and telecommunications to biomedical engineering, electric power, and consumer electronics. The IEEE Electron Devices Society is dedicated to promoting excellence in the field of electron devices, and sponsors the IEEE IEDM.

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Press release: https://metalenz.com/metalenz-launches-polar-id-enabling-simple-secure-face-unlock-for-smartphones/

Metalenz Launches Polar ID, Enabling Simple, Secure Face Unlock for Smartphones 

• The world’s first polarization sensor for smartphones, Polar ID provides ultra-secure facial authentication in a condensed footprint, lowering implementation cost and complexity.
•  Now demonstrated on Qualcomm Technologies’ latest Snapdragon mobile platform, Polar ID is poised to drive large-scale adoption of secure face unlock across the Android ecosystem.

Boston, MA – October 26, 2023 Meta-optics industry leader Metalenz unveiled Polar ID, a revolutionary new face unlock solution, at Qualcomm Technologies’ annual Snapdragon Summit this week. Being the world’s only consumer-grade imaging system that can sense the full polarization state of light, Polar ID enables the next level of biometric security. Using breakthrough advances in meta-optic capability, Polar ID accurately captures the unique “polarization signature” of a human face. With this additional layer of information, even the most sophisticated 3D masks and spoof instruments are immediately detected as non-human.

Facial authentication provides a seamless method for unlocking phones and allowing digital payment. However, to make the solution sufficiently secure requires expensive, bulky, and often power-hungry optical modules. Historically, this has limited the implementation of face unlock to only a few high-end phone models. Polar ID harnesses meta-optic technology to extract additional information such as facial contour details and to detect human tissue liveness from a single image. It is significantly more compact and cost effective than incumbent “Structured Light” face authentication solutions which require an expensive dot-pattern projector and multiple images.

Now demonstrated on a smartphone reference design powered by the new Snapdragon® 8 Gen 3 Mobile Platform, Polar ID has the efficiency, footprint, and price point to enable any Android smartphone OEM to bring the convenience and security of face unlock to the 100s of millions of mobile devices that currently use fingerprint sensors.

“Size, cost, and performance, those are the key metrics in the consumer industry”, said Rob Devlin, Metalenz CEO & Co-founder. “Polar ID offers an advantage in all three. Its small enough to fit in the most challenging form factors, eliminating the need for a large notch in the display. Its secure enough that it doesn’t get fooled by the most sophisticated 3D masks. Its substantially higher resolution than existing facial authentication solutions, so even if you’re wearing sunglasses and a surgical mask, the system still works. As a result, Polar ID delivers secure facial recognition at less than half the size and cost of incumbent solutions.”

“With each new generation of our flagship Snapdragon 8 series, our goal is to deliver the next generation of cutting-edge smartphone imaging capabilities to consumers. Our advanced Qualcomm® Spectra™ ISP and Qualcomm® Hexagon™ NPU were specifically designed to enable complex new imaging solutions, and we are excited to work with Metalenz to support their new Polar ID biometric imaging solution on our Snapdragon mobile platform for the first time,” said Judd Heape, VP of Product Management, Qualcomm Technologies, Inc.

“Polar ID is a uniquely powerful biometric imaging solution that combines our polarization image sensor with post-processing algorithms and sophisticated machine learning models to reliably and securely recognize and authenticate the phone’s registered user. Working closely with Qualcomm Technologies to implement our solution on their reference smartphone powered by Snapdragon 8 Gen 3, we were able to leverage the advanced image signal processing capabilities of the Qualcomm Spectra ISP while also implementing mission critical aspects of our algorithms in the secure framework of the Qualcomm Hexagon NPU, to ensure that the solution is not only spoof-proof but also essentially unhackable” said Pawel Latawiec, CTO of Metalenz. “The result is an extremely fast and compute efficient face unlock solution ready for OEMs to use in their next generation of Snapdragon 8 Gen 3-powered flagship Android smartphones.”

Polar ID is under early evaluation with several top smartphone OEMs, and additional evaluation kits will be made available in early 2024. Metalenz will exhibit its revolutionary Polar ID solution at MWC Barcelona and is now booking meetings to showcase a live demo of the technology to mobile OEMs.
Contact sales@metalenz.com to reserve your demo.
 

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https://www.ims.fraunhofer.de/en/Newsroom/Fairs-and-events/10th-cmos-imaging-workshop.html

10th CMOS Imaging Workshop 

What to expect
You are kindly invited to an exciting event, which will promote the exchange of users, developers and researchers of optical sensing to enhance synergy and pave the way to great applications and ideas.

Main topics

•  Single photon imaging
•  Spectroscopy, scientific and medical imaging
•  Quantum imaging
•  Image sensor technologies

The workshop will not be limited to CMOS as a sensor technology, but will be fundamentally open to applications, technologies and methods based on advanced optical sensing.

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Press release: https://prophesee-1.reportablenews.com/pr/prophesee-launches-the-world-s-smallest-and-most-power-efficient-event-based-vision-sensor-bringing-more-intelligence-privacy-and-safety-than-ever-to-consumer-edge-ai-devices

Prophesee launches the world’s smallest and most power-efficient event-based vision sensor, bringing more intelligence, privacy and safety than ever to consumer Edge-AI devices

Prophesee’s latest event-based Metavision® sensor - GenX320 - delivers new levels of performance including ultra-low power, low latency, high flexibility for efficient integration in AR/VR, wearables, security and monitoring systems, touch-free interfaces, always-on IoT and many more

October 16, 2023 2pm CET PARIS –– Prophesee SA, inventor of the world’s most advanced neuromorphic vision systems, today announced the availability of the GenX320 Event-based Metavision sensor, the industry’s first event-based vision sensor developed specifically for integration into ultra-low-power Edge AI vision devices. The fifth generation Metavision sensor, available in a tiny 3x4mm die size, expands the reach of the company’s pioneering technology platform into a vast range of fast-growing intelligent Edge market segments, including AR/VR headsets, security and monitoring/detection systems, touchless displays, eye tracking features, always-on smart IoT devices and many more.

The GenX320 event-based vision sensor builds on Prophesee’s track record of proven success and expertise in delivering the speed, low latency, dynamic range and power efficiency and privacy benefits of event-based vision to a diverse array of applications.

The 320x320 6.3μm pixel BSI stacked event-based vision sensor offers a tiny 1/5” optical format. It has been developed with a specific focus on the unique requirements of efficient integration of innovative event sensing in energy-, compute- and size-constrained embedded at-the-edge vision systems. The GenX320 enables robust, high-speed vision at ultra-low power and in challenging operating and lighting conditions.

GenX320 benefits include:

•  Low latency µsec resolution timestamping of events with flexible data formatting.
•  On-chip intelligent power management modes reduce power consumption to as low as 36uW and enable smart wake-on-events. Deep sleep and standby modes are also featured.
•  Easy integrability/interfacing with standard SoCs with multiple integrated event data pre-processing, filtering, and formatting functions to minimize external processing overhead.
•  MIPI or CPI data output interfaces offer low-latency connectivity to embedded processing platforms, including low-power microcontrollers and modern neuromorphic processor architectures.
•  AI-ready: on-chip histogram output compatible with multiple AI accelerators;
•  Sensor-level privacy-enabled thanks to event sensor’s inherent sparse frameless event data with inherent static scene removal.
•  Native compatibility with Prophesee Metavision Intelligence, the most comprehensive, free, event-based vision software suite, used by a fast-growing community of 10,000+ users.

“The low-power Edge-AI market offers a diverse range of applications where the power efficiency and performance characteristics of event sensors are ideally suited. We have built on our foundation of commercial success in other application areas and developed this new event-based Metavision sensor to address the needs of Edge system developers with a sensor that is easy to integrate, configure and optimize for multiple compelling use cases in motion and object detection, presence awareness, gesture recognition, eye tracking, and other high growth areas,” said Luca Verre, CEO and co-founder of Prophesee.

Specific use case potential

•  High speed eye-tracking for foveated rendering for seamless interaction in AR/VR/XR headsets
•  Low latency touch-free human machine interface in consumer devices (TVs, laptops, game consoles, smart home appliances and devices, smart displays and more)
•  Smart presence detection and people counting in IoT cameras and other devices
•  Ultra-low power always-on area monitoring systems
•  Fall detection cameras in homes and health facilities

Availability
The GenX320 is available for purchase from Prophesee and its sales partners. It is supported by a complete range of development tools for easy exploration and optimization, including a comprehensive Evaluation Kit housing a chip on board (COB) GenX320 module, or a compact optical flex module. In addition, Prophesee is offering a range of adapter kits that enable seamless connectivity to a large range of embedded platforms, such as a STM32 MCU, enabling faster time-to-market.

Early adopters
Zinn Labs
“Zinn Labs is developing the next generation of gaze tracking systems built on the unique capabilities of Prophesee’s Metavision event sensors. The new GenX320 sensor meets the demands of eye and gaze movements that change on millisecond timescales. Unlike traditional video-based gaze tracking pipelines, Zinn Labs is able to leverage the GenX320 sensor to track features of the eye with a fraction of the power and compute required for full-blown computer vision algorithms, bringing the footprint of the gaze tracking system below 20 mW. The small package size of the new sensor makes this the first time an event-based vision sensor can be applied to space-constrained head-mounted applications in AR/VR products. Zinn Labs is happy to be working with Prophesee and the GenX320 sensor as we move towards integrating this new sensor into upcoming customer projects.”
Kevin Boyle, CEO & Founder
 

XPERI
“Privacy continues to be one of the biggest consumer concerns when vision-based technology is used in our products such as DMS and TV services. Prophesee’s event-based Metavision technology enables us to take our ‘privacy by design’ principle to an even more secure level by allowing scene understanding without the need to have explicit visual representation of the scene. By capturing only changes in every pixel, rather than the entire scene as with traditional frame-based imaging sensors, our algorithms can derive knowledge to sense what is in the scene, without a detailed representation of it. We have developed a proof-of-concept demo that demonstrates DMS is fully possible using neuromorphic sensors. Using a 1MP neuromorphic sensor we can infer similar performance as an active NIR illumination 2MP vision sensor-based solution. Going forward, we focus on the GenX320 neuromorphic sensor that can be used in privacy sensitive smart devices to improve user experience.”
Petronel Bigioi, Chief Technology Officer
 

ULTRALEAP
“We have seen the benefits of Prophesee’s event-based sensors in enabling hands-free interaction via highly accurate gesture recognition and hand tracking capabilities in Ultraleap’s TouchFree application. Their ability to operate in challenging environmental conditions, at very efficient power levels, and with low system latency enhances the overall user experience and intuitiveness of our touch free UIs. With the new Genx320 sensor, these benefits of robustness, low power consumption, latency and high dynamic range can be extended to more types of applications and devices, including battery-operated and small form factors systems, proliferating hands-free use cases for increased convenience and ease of use in interacting with all sorts of digital content.”
Tom Carter, CEO & Co-founder

Additional coverage on EETimes:

https://www.eetimes.com/prophesee-reinvents-dvs-camera-for-aiot-applications/

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OMNIVISION Announces New 4K2K Resolution Image Sensor for Home and Professional Security Cameras
 
The OS08C10 is a high-performance 8MP resolution, small-form-factor image sensor with on-chip staggered and DAG HDR technology, designed to produce superb video/image quality in challenging lighting environments
 
SANTA CLARA, Calif. – October 24, 2023 – OMNIVISION, a leading global developer of semiconductor solutions, including advanced digital imaging, analog, and touch & display technology, today announced the new OS08C10, an 8-megapixel (MP) backside illumination (BSI) image sensor that features both staggered high dynamic range (HDR) and single exposure dual analog gain (DAG) for high-performance imaging in challenging lighting conditions. The 1.45-micron (µm) BSI pixel supports 4K2K resolution and high frame rates. It comes in a small 1/2.8-inch optical format, a popular size for home and professional security, IoT and action cameras.
 
“Our new 1.45 µm pixel OS08C10 image sensor provides improved sensitivity and optimized readout noise, closing the gap with big-pixel image sensors that have traditionally been required for high-performance imaging in the security market,” said Cheney Zhang, senior marketing manager, OMNIVISION. “The OS08C10 supports both staggered HDR and DAG HDR. Staggered HDR extends dynamic range in both bright and low lighting conditions; the addition of built-in DAG provides single-exposure HDR support and reduces motion artifacts. Our new feature-packed sensor supports 4K2K resolution for superior image quality with finer details and enhanced clarity.”
 
OMNIVISION’s OS08C10 captures real-time 4K video at 60 frames per second (fps) with minimal artifacts. Its selective conversion gain (SCG) pixel design allows the sensor to flexibly select low and high conversion gain, depending on the lighting conditions. The sensor adopts the new correlated multi-sampling (CMS) to further reduce readout noise and improve SNR1 and low-light performance. The OS08C10’s on-chip defective pixel correction (DPC) improves quality and reliability above and beyond standard devices by providing real-time correction of defective pixels that can result throughout the sensor’s life cycle, especially in harsh operating conditions.
 
The OS08C10 is built on OMNIVISION’s PureCel®Plus-S stacked-die technology, enabling high-resolution 8MP in a small 1.45 µm BSI pixel. At 300 mW (60 fps), the OS08C10 achieves the lowest power consumption on the market. OMNIVISION’s OS08C10 is a cost-effective 4K2K solution for security, IoT and action cameras applications.
 
The OS08C10 is sampling now and will be in mass production in Q1 2024. For more information, contact your OMNIVISION sales representative: www.ovt.com/contact-sales.

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Sony Semiconductor Solutions to Launch 1/3-Type-Lens-Compatible, 3.2-Effective-Megapixel Stacked CMOS Image Sensor with Global Shutter for Industrial Use Featuring Highest Resolution in This Class in the Industry

Atsugi, Japan — Sony Semiconductor Solutions Corporation (SSS) today announced the upcoming release of the IMX900, a 1/3-type-lens-compatible, 3.2-effective-megapixel stacked CMOS image sensor with a global shutter for industrial use that boasts the highest resolution in its class.
The new sensor product employs an original pixel structure to dramatically improve light condensing efficiency and near infrared sensitivity compared to conventional products, enabling miniaturization of pixels while maintaining the key characteristics required of industrial image sensors. This design achieves the industry’s highest resolution of 3.2 effective megapixels for a 1/3.1-type, global shutter system which fits in the S-mount (M12), the mount widely used in compact industrial cameras and built-in vision cameras.

The new product will contribute to the streamlining of industrial tasks in numerous ways, by serving in applications such as code reading in the logistics market and assisting in automating manufacturing processes using picking robot applications on production lines, thereby helping to resolve issues in industrial applications.

With demand for automation and manpower savings on the rise in every industry, SSS’s original Pregius S™ global shutter technology contributes to improved image recognition by enabling high-speed, high-precision, motion distortion-free imaging in a compact design. The new sensor utilizes a unique pixel structure developed based on Pregius S, moving the memory unit that was previously located on the same substrate as the photodiode to a separate signal processing circuit area. This new design makes it possible to enlarge the photodiode area, enabling pixel miniaturization (2.25 μm) while maintaining a high saturation signal volume, successfully delivering a higher pixel count of approximately 3.2 effective megapixels for a 1/3.1-type sensor.

Moving the memory unit to the signal processing circuit area has also increased the aperture ratio, bringing significant improvements to both incident light angle dependency and quantum efficiency. These features enable a much greater level of flexibility in the lens design for the cameras which employ this sensor. Additionally, a thicker photodiode area enhances the near infrared wavelength (850 nm) sensitivity, and nearly doubles the quantum efficiency compared to conventional products.

This compact, 1/3.1-type product is available in a package size that fits in the S-mount (M12), the versatile mount type used in industrial applications. It can be used in a wide range of applications where more compact, higher performance product designs are desired, such as in compact cameras for barcode readers in the logistics market, picking robot cameras on production lines, and the automated guided vehicles (AGVs) and autonomous mobile robots (AMRs) that handle transportation tasks for workers.

Main Features

•  Industry’s highest resolution for an image sensor with a global shutter compatible with a 1/3-type lens, at approximately 3.2 effective megapixels
•  Vastly improved incident light angle dependency lend greater flexibility to lens design
• Delivers approximately double the quantum performance of conventional products in the near infrared wavelength
• Includes on-chip features for greater convenience in reducing post-production image processing load
• High-speed, 113 fps imaging

Cross-section of pixel structure
Product using conventional Pregius S technology (left) and the IMX900 using the new pixel structure (right)

Example of effects due to improved incident light angle dependency

Usage example of Fast Auto Exposure function

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Gpixel adds MIPI-enabled 5 MP and 12 MP NIR Global Shutter image sensors to popular GMAX family

October 18, 2023, Changchun, China: Gpixel announces the pin-compatible GMAX3405 and
GMAX3412 CMOS image sensors - both based on a high-performance 3.4 μm charge domain global
shutter pixel to complete its c-mount range of GMAX products. With options for read out via either
LVDS or MIPI channels, these new sensors are optimized for easy integration into cost-sensitive
applications in machine vision, industrial bar code reading, logistics, and traffic.

GMAX3405 provides a 2448(H) x 2048(V), 5 MP resolution in a 2/3” optical format. In 10-bit mode,
reading out through all 12 pairs of LVDS channels, the frame rate is over 164 fps. In 12-bit mode,
100 fps can be achieved. Using the 4 MIPI D-PHY channels, the maximum frame rate is 73 fps with
a 12-bit depth. GMAX3412 provides a 4096(H) x 3072(V), 12 MP resolution in a 1.1” optical format.
In 10-bit mode, reading out through all 16 pairs of LVDS channels, the frame rate is over 128 fps.
In 12-bit mode, 60 fps can be achieved. Using the 4 MIPI D-PHY channels, the maximum frame rate
is 30 fps with a 12-bit depth. In both sensors, various multiplexing options are available for both
LVDS and MIPI readout to reduce the number of lanes.

 The 3.4 μm charge-domain global shutter pixel achieves a full well capacity of 10 ke- and noise of
3.6 e- at default x1 PGA gain, down to 1.5 e- at max gain setting (x16), delivering up to 68.8 dB
linear dynamic range. The advanced pixel design and Red Fox technology combined brings a peak
QE of 75% @ 540 nm, a NIR QE of 33% @850 nm , a Parasitic Light Sensitivity of -88 dB and an
excellent angular response of > 15° @ 80% response. All of this combined with multislope HDR
mode and ultra-short exposure time modes down to 1 us.

“The GMAX family was originally known for the world’s first 2.5 μm global shutter pixel. As the
product family grows, we are leveraging the advanced technology that makes the 2.5 μm pixel
possible to bring more generous light sensitivity with larger pixel sizes fitting mainstream optical
formats. With the addition of the MIPI interface and pin-compatibility and excellent NIR response,
these 2 new models bring more flexibility and cost-effectiveness to the GMAX product family.” says
Wim Wuyts, Gpixel’s Chief Commercial Officer.

Both GMAX3405 and GMAX3412 are housed in 176 pin ceramic LGA packages, both being pin-
compatible to each other. The outer dimensions of the 5MP and 12MP sensors respectively are
17.60 mm x 15.80 mm and 22.93 mm x 19.39 mm. The LGA pad pattern is optimized for reliable
solder connections and the sensor assembly includes a double-sided AR coated cover glass lid.

Engineering samples of both products, in both color and monochrome variants, can be ordered
today for delivery in November 2023. For more information about Gpixel’s roadmap of products
for industrial imaging, please contact info@gpixel.com to arrange for an overview.

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Link: https://issw2024.fbk.eu/cfp

International SPAD Sensor Workshop (ISSW 2024) will be organized by Fondazione Bruno Kessler - FBK.
When: June 4-6, 2024
Location: Trento, Italy

Call for Papers & Posters

The 2024 International SPAD Sensor Workshop (ISSW) is a biennial event focusing on Single-Photon Avalanche Diodes (SPAD), SPAD-based sensors and related applications. The workshop welcomes all researchers (including PhDs, postdocs, and early-career researchers), practitioners, and educators interested in these topics.
 
After two on-line editions, the fourth edition of the workshop will return to an in-person only format.
The event will take place in the city of Trento, in northern Italy, hosted at Fondazione Bruno Kessler, in a venue suited to encourage interaction and a shared experience among the attendees.

The workshop will follow a 1-day long introductory school on SPAD sensor technology, which will be held in the same venue as the workshop on June 3rd, 2024.
 
The workshop will include a mix of invited talks and, for the first time, peer-reviewed contributions.
Accepted works will be published on the International Image Sensor Society website (https://imagesensors.org/).

Submitted works may cover any of the aspects of SPAD technology, including device modelling, engineering and fabrication, SPAD characterization and measurements, pixel and sensor architectures and designs, and SPAD applications.
 
Topics
Papers on the following SPAD-related topics are solicited:
● CMOS/CMOS-compatible technologies
● SiPMs
● III-V, Ge-on-Si
● Modelling
● Quenching and front-end circuits
● Architectures
● Time-to-Digital Converters
● Smart histogramming techniques
● Applications of SPAD arrays, such as:
o Depth sensing / ToF / LiDAR
o Time-resolved imaging
o Low-light imaging
o High dynamic range imaging
o Biophotonics
o Computational imaging
o Quantum imaging
o Quantum RNG
o High energy physics
o Free space communication
● Emerging technologies & applications
 
Paper submission
Workshop proposals must be submitted online. A link will be soon made available.
 
Each submission should consist of a 100-word abstract, and a camera-ready manuscript of 2-to-3 pages (including figures), and include authors’ name(s) and affiliation, short bio & picture, mailing address of the presenter, telephone, and e-mail address of the presenter. A template will be provided soon.
The deadline for paper submission is 23:59 CET, Friday December 8th, 2023.
 
Papers will be considered on the basis of originality and quality. High quality papers on work in progress are also welcome. Papers will be reviewed confidentially by the Technical Program Committee.

Accepted papers will be made freely available for download from the International Image Sensor Society website. Please note that no major modifications are allowed.

Authors will be notified of the acceptance of their abstract & posters at the latest by Wednesday Jan 31st, 2024.
 
Poster submission
In addition to talks, we wish to offer all graduate students, post-docs, and early-career researchers an opportunity to present a poster on their research projects or other research relevant to the workshop topics .

If you wish to take up this opportunity, please submit a 1-page description (including figures) of the proposed research activity, along with authors’ name(s) and affiliation, mailing address, telephone, and e-mail address.

The deadline for poster submission is 23:59 CET, Friday December 8th, 2023.

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