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This entry covers the progression of products originally developed by Reticon through its acquisition by EG&G (retaining the Reticon name) then EG&G's acquisition of part of PerkinElmer and the PerkinElmer name (Reticon was still applied sporadically as a brand) and finally the spinoff of PerkinElmer's optoelectronics businesses as Excelitas. Throughout this process, many of the original Reticon products retained their original part numbers as can be seen in the data sheets. 

Four items of note:

1 - Documents issued under "EG&G Reticon" are in the Reticon folder since the Reticon identity was maintained.  There is not yet an EG&G folder but this will be added when the amorphous silicon flat-panel products developed by EG&G are covered. The EG&G Amorphous Silicon facility was in the same building as Reticon in Sunnyvale, California, but operated independently. That business was later sold by PerkinElmer to Varex, formerly Varian Medical Systems.

2 - Excelitas no longer sells any Reticon-originated products. These became difficult to source when the fab Reticon operated in its own building was closed in the late 90's. Moving from a 3 micron process to 180 nm was quite difficult, especially while the selection of fabs who could make CCDs was rapidly shrinking. Excelitas still sells products originally made by some of the other optoelectronics companies EG&G bought, like thermopile arrays.  Those are included in the Excelitas folder but their history will be told later.

3 - Reticon, up through the PerkinElmer days, made many custom devices including a 20,000 pixel long three-color TDI sensor that flew on the U2 and an ultraviolet CCD for i-line semiconductor mask inspection. If the specifications or evaluation reports for any of these turn up, they will be posted.

4 - Reticon started by making bucket-brigade devices to be used as delay lines and switched-capacitor filter chips. These aren't imagers but they are in the folder to provide some background.

Reticon & EG&G Reticon document archive

PerkinElmer document archive

Excelitas document archive

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Link: https://issw2024.fbk.eu/cfp

International SPAD Sensor Workshop (ISSW 2024) will be organized by Fondazione Bruno Kessler - FBK.
When: June 4-6, 2024
Location: Trento, Italy

Call for Papers & Posters

The 2024 International SPAD Sensor Workshop (ISSW) is a biennial event focusing on Single-Photon Avalanche Diodes (SPAD), SPAD-based sensors and related applications. The workshop welcomes all researchers (including PhDs, postdocs, and early-career researchers), practitioners, and educators interested in these topics.
 
After two on-line editions, the fourth edition of the workshop will return to an in-person only format.
The event will take place in the city of Trento, in northern Italy, hosted at Fondazione Bruno Kessler, in a venue suited to encourage interaction and a shared experience among the attendees.

The workshop will follow a 1-day long introductory school on SPAD sensor technology, which will be held in the same venue as the workshop on June 3rd, 2024.
 
The workshop will include a mix of invited talks and, for the first time, peer-reviewed contributions.
Accepted works will be published on the International Image Sensor Society website (https://imagesensors.org/).

Submitted works may cover any of the aspects of SPAD technology, including device modelling, engineering and fabrication, SPAD characterization and measurements, pixel and sensor architectures and designs, and SPAD applications.
 
Topics
Papers on the following SPAD-related topics are solicited:
● CMOS/CMOS-compatible technologies
● SiPMs
● III-V, Ge-on-Si
● Modelling
● Quenching and front-end circuits
● Architectures
● Time-to-Digital Converters
● Smart histogramming techniques
● Applications of SPAD arrays, such as:
o Depth sensing / ToF / LiDAR
o Time-resolved imaging
o Low-light imaging
o High dynamic range imaging
o Biophotonics
o Computational imaging
o Quantum imaging
o Quantum RNG
o High energy physics
o Free space communication
● Emerging technologies & applications
 
Paper submission
Workshop proposals must be submitted online. A link will be soon made available.
 
Each submission should consist of a 100-word abstract, and a camera-ready manuscript of 2-to-3 pages (including figures), and include authors’ name(s) and affiliation, short bio & picture, mailing address of the presenter, telephone, and e-mail address of the presenter. A template will be provided soon.
The deadline for paper submission is 23:59 CET, Friday December 8th, 2023.
 
Papers will be considered on the basis of originality and quality. High quality papers on work in progress are also welcome. Papers will be reviewed confidentially by the Technical Program Committee.

Accepted papers will be made freely available for download from the International Image Sensor Society website. Please note that no major modifications are allowed.

Authors will be notified of the acceptance of their abstract & posters at the latest by Wednesday Jan 31st, 2024.
 
Poster submission
In addition to talks, we wish to offer all graduate students, post-docs, and early-career researchers an opportunity to present a poster on their research projects or other research relevant to the workshop topics .

If you wish to take up this opportunity, please submit a 1-page description (including figures) of the proposed research activity, along with authors’ name(s) and affiliation, mailing address, telephone, and e-mail address.

The deadline for poster submission is 23:59 CET, Friday December 8th, 2023.

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 Rivian

Senior Camera Tuning & Image Quality Engineer	Palo Alto, California, USA	Link
Sr. Sensor Engineer, Autonomy	Palo Alto, California, USA	Link
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Analog Design and Characterization Engineer	Oslo, Norway	Link
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XDEP - X-ray Detector Technologies for Physics - 5-6 Feb 2024 - Saint-Aubin, France - Website

IEEE International Solid-State Circuits Conference (ISSCC) - 18-22 Feb 2024 - San Francisco, California, USA - Website

SPIE Medical Imaging - 18-24- Feb 2024 - San Diego, California, USA - Website

innoLAE (Innovations in Large-Area Electronics) - 20-22 Feb 2024 - Cambridge, UK - Website

16th Terascale Detector Workshop - 21-23 Feb 2024 -  Mainz, Germany  - Website

MSS Detectors and Materials Conference (clearance may be required) - 26 Feb-1 Mar 2024 - Orlando, Florida, USA - Website

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Tektronix and SITe are posted together because one transformed into the other carrying along the existing fab, products and people. Tektronix (yes, the oscilloscope company) originally worked in CCDs to produce a delay line use to convert a fast data stream into a slower one for an oscilloscope designed to capture high-speed transients. Tek decided to use its CCD technology to make large sensors for astronomy and medicine. Making imaging devices was an odd business for them so they sold it to an investment company which, in October 1993, formed Scientific Imaging Technologies. SITe supplied big CCDs into the early 2000s.

Tektronix document archive

SITe document archive

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A team from Military University of Technology (Poland) and Shanghai Institute of Technical Physics (China) have published a review article titled "Infrared avalanche photodiodes from bulk to 2D materials" in Light: Science & Applications journal.

Open access paper: https://www.nature.com/articles/s41377-023-01259-3

Abstract: Avalanche photodiodes (APDs) have drawn huge interest in recent years and have been extensively used in a range of fields including the most important one—optical communication systems due to their time responses and high sensitivities. This article shows the evolution and the recent development of AIIIBV, AIIBVI, and potential alternatives to formerly mentioned—“third wave” superlattices (SL) and two-dimensional (2D) materials infrared (IR) APDs. In the beginning, the APDs fundamental operating principle is demonstrated together with progress in architecture. It is shown that the APDs evolution has moved the device’s performance towards higher bandwidths, lower noise, and higher gain-bandwidth products. The material properties to reach both high gain and low excess noise for devices operating in different wavelength ranges were also considered showing the future progress and the research direction. More attention was paid to advances in AIIIBV APDs, such as AlInAsSb, which may be used in future optical communications, type-II superlattice (T2SLs, “Ga-based” and “Ga-free”), and 2D materials-based IR APDs. The latter—atomically thin 2D materials exhibit huge potential in APDs and could be considered as an alternative material to the well-known, sophisticated, and developed AIIIBV APD technologies to include single-photon detection mode. That is related to the fact that conventional bulk materials APDs’ performance is restricted by reasonably high dark currents. One approach to resolve that problem seems to be implementing low-dimensional materials and structures as the APDs’ active regions. The Schottky barrier and atomic level thicknesses lead to the 2D APD dark current significant suppression. What is more, APDs can operate within visible (VIS), near-infrared (NIR)/mid-wavelength infrared range (MWIR), with a responsivity ~80 A/W, external quantum efficiency ~24.8%, gain ~105 for MWIR [wavelength, λ = 4 μm, temperature, T = 10–180 K, Black Phosphorous (BP)/InSe APD]. It is believed that the 2D APD could prove themselves to be an alternative providing a viable method for device fabrication with simultaneous high-performance—sensitivity and low excess noise.

Fig. 1: Bulk to low-dimensional material, tactics to fabricate APDs and possible applications: FOC, FSO, LIDAR and QKDs.

Fig. 2: The APD’s operating principle. a Electron and hole multiplication mechanisms, schematic of multiplication mechanism for b k = 0 (αh = 0) and c k = 1 (αe = αh), where k = αh/αe – αe, αh represent electron and hole multiplication coefficients. d αe, αh ionization coefficients versus electric field for selected semiconductors used for APDs’ fabrication

Fig. 3: APDs. a p–n device, b SAM device, and c SAGCM device with electric field distribution. F(M) dependence on M for the selected k = αh/αe in APDs when: d electrons and e holes dominate in the avalanche mechanism. The multiplication path length probability distribution functions in the: f local and g non-local field “dead space” models

Fig. 4: InGaAs/InP SAM-APD. a device structure, b energy band profile, and electric field under normal reverse bias condition. AlxIn1–xAsySb1–y based SACM APD: c detector’s design with the E distribution within the detector, d measured and theoretically simulated gain, dark current, photocurrent versus reverse voltage for 90 μm diameter device at room temperature39. InAs planar avalanche photodiode: e a schematic design diagram, f comparison of the gain reached by 1550 nm wavelength laser132,133. The M normalized dark current for 100 μm radius planar APD was presented for 200 K

Fig. 5: F(M) versus M for. a Si, AlInAs, GaAs, Ge, InP [the solid lines present the F(M) for k within the range 0–1 (increment 0.1) calculated by the local field model24, typical F(M) are shown by shaded regions37 and b selected materials: 3.5 μm thick intrinsic InAs APDs (50 μm and 100 μm radius), 4.2 μm cut-off wavelengths HgCdTe and 2.2 μm InAlAs APDs

Fig. 6: Gain and k versus Hg1–xCdxTe bandgap energy. a the crossover between e-APD and h-APD. The crossover at Eg ≈ 0.65 eV corresponds to the λc = 1.9 μm for 300 K46. Hole-initiated avalanche HgCdTe photodiode: b detector profile, c energy band structure, d hole-initiated multiplication process energy band structure. The multiplication layer bandgap energy is adjusted to the resonance condition where the bandgap and the split-off valence band energy and the top of the heavy-hole valence band energy difference are equal. Electron-initiated avalanche HgCdTe photodiode: e diagram of electron-initiated avalanche process for HgCdTe-based high-density vertically integrated photodiode (HDVIP) structure (n-type central region and p-type material around), f electron avalanche mechanism, and g relative spectral response for 5.1 μm cut-off wavelength HgCdTe HDVIP at T = 80 K

 

Fig. 7: HgCdTe APDs performance. a the experimental gain versus bias for selected cut-off wavelengths for DRS electron-initiated APDs at 77 K together with extra measured data points taken at ∼77 K51 and LETI e-APDs at 80 K59, b constant F(M) ~ 1 versus M at 80 K for 4.3 μm cut-off wavelength APD135

Fig. 8: The device structure comparison between low-noise PMT and multi-quantum well APDs. a schematic presentation of a photomultiplier tube, b multi-quantum well p-i-n APD energy band sketch with marked intrinsic region (i), c energy band profiles of staircase APD under zero (top) and reverse (bottom) voltage. Multistep AlInAsSb staircase avalanche photodiode: d 3-step staircase APD device profile, e theoretically calculated by Monte Carlo method and measured gain of 1-, 2-, and 3-stairs APDs for 300 K70. MWIR SAM-APD structure with AlAsSb/GaSb superlattice: f device design profile, g energy band structure under reverse voltage, and h carriers impact multiplication coefficients versus reciprocal electric field at 200 K

Fig. 9: Low-dimensional solid avalanche photodetectors. a graphite/InSe Schottky avalanche detector - injection, ionization, collection electron transport mechanisms, b e-ph scattering dimensionality reduction affects electron acceleration process and gain versus electric field in 2D (red line) and 3D (blue line), c breakdown voltage (Vbd) and gain as a function of temperature—exhibits a negative temperature coefficient81. Nanoscale vertical InSe/BP heterostructures ballistic avalanche photodetector: d schematic of the graphene/BP/metal avalanche device83, e ballistic avalanche photodetector operating principle, f quasi-periodic current oscillations, g schematic of the graphene InSe/BP83, h Ids–Vds characteristics for selected temperatures (40 − 180 K), i avalanche breakdown threshold voltage (Vth) and gain versus temperature—showing a negative temperature coefficient. Pristine PN junction avalanche photodetector: j device structure, k as the number of layers increases, a positive/negative signal of SCM denotes hole/electron carries, l APD’s low temperature (~100 K) dark and photocurrent I–V curves

Fig. 10: An idea of laser-gated system connected with passive thermal imaging for enhanced distant identification. a operation principle [at t0—camera is closed—light pulse is emitted, at t1—target reflects light pulse, at t2—the camera is opened for a short period (∆t) matching the needed depth of view]; b typical images of wide FOV thermal and laser-gating systems

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 Alphacore

Sr Design Engineer

Tempe, Arizona, USA

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Tesla Motors

Image Scientist, Camera Technology	Palo Alto, California, USA	Link
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Internship, Machine Vision, Cell Manufacturing (Spring/Summer 2024)	Palo Alto, California, USA	Link

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CMOS Image Sensor Analog Design Engineer	Taiwan	Link
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