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In a recent article in Optics Express titled "Watching the watchers: camera identification and characterization using retro-reflections,", Seets et al. from University of Wisconsin-Madison write:

A focused imaging system such as a camera will reflect light directly back at a light source in a retro-reflection (RR) or cat-eye reflection. RRs provide a signal that is largely independent of distance providing a way to probe cameras at very long ranges. We find that RRs provide a rich source of information on a target camera that can be used for a variety of remote sensing tasks to characterize a target camera including predictions of rotation and camera focusing depth as well as cell phone model classification. We capture three RR datasets to explore these problems with both large commercial lenses and a variety of cell phones. We then train machine learning models that take as input a RR and predict different parameters of the target camera. Our work has applications as an input device, in privacy protection, identification, and image validation.

 Link: https://opg.optica.org/oe/fulltext.cfm?uri=oe-32-8-13836&id=548474

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The LI5040 and 3U5MGXSBA global shutter image sensor employs an advanced pixel design introducing drive readout and gathering structures which help significantly reduce noise, and contributing to a wide dynamic range with a power consumption of 500mW. Equipped with a 3.4μm pixel size and all pixel progressive reading at 120fps, the 2/3” sensor size with 5.33 million effective pixels (2592 x 2056) easily allows for applications in machine vision and other industrial environments where smaller size and high performance are required. It is available in RGB, Monochrome, and a specialized RGB‐NIR color filter.

LI5030SA is a CMOS type of solid-state image sensor with a 35mm full frame effective pixel array of 19 Megapixels. It uses a global shutter function instead of a conventional rolling shutter. It enables simultaneous exposure timing for all 19 megapixels. It can output an effective 5688 x 3334 pixels of video at 57.99 fps and 12bit via 24 channels of digital signal output. LI5030SA series consists of LI5030SAC (color), LI5030SAI (RGBIR), LI5030SAM (monochrome), and LI5030SAN (Naked). LI5030SAN does not have a microlens or color filter.
The high sensitivity, resolution, and global shutter of this sensor along with multiple color filter variations makes the LI5030 a great choice for a wide array of applications such as microscopes, factory automation, traffic surveillance, drone vision, etc.

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This video presents Sony's 1/3.1" global shutter image sensor IMX900 with approx. 3.2 effective megapixels that is compact, high-resolution, and has improved near-infrared sensitivity. Here are its three features.
=================================
Chapters
 =================================
0:00 Opening
0:40 Compact, high resolution（1/3.1" 3.2MP）
1:12 Improved incident light angle dependency
3:00 Enhanced NIR region sensitivity
3:41 Ending
------------------------------------------------------------

This video presents Sony's IMX900 global shutter image sensor, which is ideal for industrial applications such as barcode reading, picking robot, and AMR (autonomous mobile robots).　
Here are the three functions that support optimal imaging for different scenarios.
=================================
Chapters
 =================================
0:00 Opening
0:27 Fast Auto Exposure
1:42 Quad HDR（High Dynamic Range）
2:22 Quad Shutter Control

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Taiwan-based IC design house Egis Technology (EgisTec) has announced plans to acquire Curious, a Japan-based IP and fabless chipmaker, in a share swap transaction valued at NT$525 million (US$16.4 million). 

Link: https://www.digitimes.com/news/a20240402PD213/egistec-inpsytech-ip-licensing-mergers-and-acquisitions.html

Curious designs IP for image sensors:
http://www.curious-jp.com/en/

Egis makes fingerprint sensors including under-display optical sensors, including those used in older Samsung Galaxy S9 and S9+ phones:
https://www.egistec.com/en/

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Link: https://www.xfab.com/news/details/article/x-fab-enhances-image-sensor-performance-through-back-side-illumination

X-FAB Enhances Image Sensor Performance Through Back-Side Illumination

NEWS – Tessenderlo, Belgium – Apr 03, 2024

Presenting a foundry route to medical, automotive and industrial customers that combines boosted sensitivity, larger pixel size and more extensive sensor area

X-FAB Silicon Foundries SE, the leading analog/mixed-signal and specialty foundry, has just announced a major addition to its optical sensor offering. Aimed at use in next generation image sensor fabrication, the company is now able to provide a back-side illumination (BSI) capability in relation to its popular XS018 180nm CMOS semiconductor process.

Through BSI, imaging devices’ performance characteristics can be significantly enhanced. It means that the back-end process metal layers do not block the incident light from reaching the pixels, increasing fill factors by up to 100%. This is highly beneficial in situations of low-level illumination – as higher pixel light sensitivity can be achieved. BSI also offers the added advantage of significantly reducing the crosstalk between neighboring pixels, due to shorter light paths, leading to better image quality. Though small-pixel BSI solutions for 300mm wafers with high-volume consumer usage are commonplace, there are very few options available for image sensors with stitched large-pixel arrangements for 200mm wafers, especially when additional customizations are required. The new X-FAB BSI capability brings new possibilities, allowing customers with even the most demanding application expectations to be served - such as those involved in X-Ray diagnostic equipment, industrial automation systems, astronomical research, robotic navigation, vehicle front cameras, etc.

Leveraging the XS018 platform, which offers high readout speeds and exhibits low dark currents, image sensors with multiple epi options will be produced. An ARC layer can be added and then tuned in accordance with particular customer requirements. The accompanying X-FAB support package covers a full workflow from initial design through to the shipment of engineering samples, with a comprehensive PDK included.

“BSI technology has become increasingly prevalent in modern imaging devices, thanks to its ability to boost image quality by placing light-sensitive elements closer to the light source and avoiding unwanted circuitry obstructions. This is proving very useful in environments where light is limited,” states Heming Wei, Technical Marketing Manager for Optical Sensors at X-FAB. “Though much of this uptake has been within the consumer electronics sector, there are now numerous opportunities emerging in the industrial, automotive and medical markets. Via access to X-FAB’s BSI foundry solution, it will now be possible for these to be properly attended to, with a compelling offering being provided that brings together heightened sensitivity, enlarged image sensor dimensions and bigger pixel capacities too.”

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From https://www.sony-semicon.com/en/news/2024/2024032801.html

New Fab Expansion at Sony Device Technology (Thailand) Co., Ltd.

Atsugi, Japan — Sony Semiconductor Solutions Corporation today announced that, starting in February 2024, it has begun the operations with several production lines at the new fab built on the premises of Sony Device Technology (Thailand) Co., Ltd. (“SDT”), a production center responsible for assembly processes of semiconductors. The opening ceremony was held today, officiated by top executives from Sony Semiconductor Solutions Group led by Terushi Shimizu, President and CEO of Sony Semiconductor Solutions and Yoshihiro Yamaguchi, President of Sony Semiconductor Manufacturing, SDT Managing Director Takeshi Matsuda. It was witnessed by guests including Japan’s Ambassador to Thailand, Mr. Masato Otaka, Mr. Wirat Tatsaringkansakul, BOI Deputy Secretary General and other VIPs. 

SDT serves as a production center for the assembly of the main product line within Sony’s Imaging & Sensing Solutions business. The new fab, dubbed “Building 4,” will be utilized for the assembly of image sensors for automotive applications and display devices as well as the mass production of laser diodes for data center application.

Going forward, SDT plans to expand production facilities at Building 4 in line with market trends, while also planning to create approximately 2,000 new jobs with this new operation, thereby contributing to local employment and expanding the semiconductor industry in Thailand.

In addition, SDT has been operating its facilities on 100% renewable energy since fiscal year 2021. In the clean room of Building 4, the air conditioning system controls cleanliness, temperature and humidity by focusing on areas of need, and recycling technology for waste heat and hot water has also been adopted. Furthermore, SDT plans to cover the roof area of Building 4 with solar panels, with operations scheduled by the end of 2024 (calendar year). By accelerating the initiatives to reduce energy consumption and adoption of renewable energy, SDT will continue to run on 100% renewable energy even after Building 4 goes into full operation.

“With the completion of Building 4, we are very pleased to be able to deliver to more customers, a product line-up whose market is expected to expand over the medium to long term,” said Takeshi Matsuda, Managing Director of Sony Device Technology (Thailand) Co., Ltd. “As an overseas manufacturing site of Sony Semiconductor Solutions Group, SDT will contribute to the sustainable evolution of Sony’s business as well as society.”

-----------------------------

Two new videos about IMX900 sensor on YouTube:

This video presents Sony's 1/3.1" global shutter image sensor IMX900 with approx. 3.2 effective megapixels that is compact, high-resolution, and has improved near-infrared sensitivity. Here are its three features.

This video presents Sony's IMX900 global shutter image sensor, which is ideal for industrial applications such as barcode reading, picking robot, and AMR (autonomous mobile robots).　 Here are the three functions that support optimal imaging for different scenarios.

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 STMicroelectronics

Expert in image processing algorithms for optical sensors (or)            Paris, France      Link
Expert en algorithmes de traitement d'image pour capteurs optiques    

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KU Leuven

PhD on temporal noise reduction in CMOS image sensors     Geel, Belgium     Link

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From Nikkei Asia news: https://asia.nikkei.com/Business/Tech/Semiconductors/Japan-s-Toppan-shifts-image-sensor-component-production-to-China

Japan's Toppan shifts image sensor component production to China

TOKYO -- Japan's Toppan Holdings has moved production of components for CMOS image sensors from Japan to China, aiming to boost local production 40% as Beijing looks to bolster its supply chains for related technologies.

CMOS -- complementary metal-oxide semiconductor -- sensors convert light captured by camera lenses into electrical signals. Among CMOS components, Toppan produces on-chip color filters (OCF) that colorize captured images and microlenses that increase light-gathering power. Without OCF, CMOS can only detect differences in light level.

Toppan brought related equipment from its plant in Japan's Kumamoto prefecture to a facility in Shanghai and increased production lines from five to seven. They do not fall under U.S. export restrictions targeting China for advanced chipmaking equipment.

The Kumamoto plant will be used for research and development and its approximately 370 employees will be maintained.

The global CMOS market in 2022 was around $21.2 billion, according to French research firm Yole Intelligence. Sony Group leads with a 42% market share, followed by Samsung Electronics with 19% and U.S.-based Omnivision with 11%.

China's presence among top companies is limited to seventh-place GalaxyCore with 4% and eighth-place SmartSens with 2%. While Sony and Samsung manufacture OCF in-house, Chinese manufacturers mainly procure from outside sources.
In China, demand is increasing for CMOS related to automobiles, smartphones, surveillance cameras and other fields. Toppan will strengthen sales to local CMOS sensor manufacturers by producing near areas of demand.

Toppan's move comes as Beijing is spending more than $1.75 billion a year on subsidies to boost domestic semiconductor production, according to the South China Morning Post.
The U.S. has placed restrictions on the export of chipmaking equipment to China out of concerns the technology could be diverted for military purposes, making it difficult for the country to produce advanced chips.

Among chips in practical use, the most advanced level is currently said to be 3 nanometers. In general, the smaller the nanometer level for a logic chip, the more powerful it is.

Amid U.S. restrictions, China is focusing on CMOS, which differ from logic chips in manufacturing method and the definition of advanced products. Most CMOS can be manufactured using mature technology of 28 nm or greater, with the production equipment falling outside of the U.S. restrictions.
China's share based on production capacity of all 28-nm or greater so-called legacy chips is expected to reach 33% of the world's total in 2027, up 4 percentage points from 2023, according to Taiwan research firm TrendForce.

Beijing announced its "Made in China 2025" high-tech industry development plan in 2015, choosing semiconductors as a priority area. Two large government funds have been set up so far to help boost the domestic chip industry.

Plans for a third phase have recently emerged. Bloomberg reported this month that China was raising more than $27 billion from local governments and state-owned enterprises for a chip fund, the biggest of its kind.

Investment in mature technology other than CMOS is also increasing in China, and Japanese and U.S. manufacturing equipment makers are increasing sales in this field as well.
    
The value of chipmaking equipment shipments to China reached a record high of over $30 billion in 2023, up 6% from 2022 and putting the country first ahead of Taiwan and South Korea in imports, according to industry group SEMI.

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In a preprint titled "Metasurface-based planar microlenses for SPAD pixels", J. Vaillant et al. of STMicroelectronics and CEA LETI write:

In this paper we present two design generations of metasurface-based planar microlenses implemented on Front-Side Illumination SPAD pixels. This kind of microlens is an alternative to conventional reflow microlens. It offers more degrees of freedom in term of design, especially the capability to design off-axis microlens to gather light around the SPAD photodiode. The two generations of microlenses have been fabricated on STMicroelectronics SPAD and characterized. We validated the sensitivity improvement offered by extended metasurface-based microlens. We also confirmed the impact of lithography capability on metasurface performances, highlighting the need have access to advance deep-UV lithography.

 

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Sony Semiconductor Solutions Europe

Senior Top AMS Verification Engineer     Trento, Italy     Link

Senior Digital Physical Implementation Engineer      Trento, Italy     Link

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A paper titled "SPAD Image Sensors for Quantum and Classical Imaging" by Prof. Edoardo Charbon was published in the STO Meetings proceedings in January 2024.

Paper link: https://www.sto.nato.int/publications/STO%20Meeting%20Proceedings/STO-MP-IST-SET-198/MP-IST-SET-198-C1-03.pdf

Abstract:
Single-photon avalanche diodes (SPADs) have been demonstrated on a variety of CMOS technologies since the early 2000s. While initially inferior to their counterparts implemented dedicated technologies, modern CMOS SPADs have recently matched them in sensitivity, noise, and timing jitter. Indeed, high time resolution, enabled by low jitter, has helped demonstrate the most impressive developments in fields of imaging and detection, including fluorescence lifetime imaging microscopy (FLIM), Förster resonance energy transfer (FRET), fluorescence correlation spectroscopy (FCS), time-of-flight positron emission tomography (TOF-PET), and light detection and ranging (LiDAR), just to name a few. The SPAD’s power of detecting single photons in pixels that can be replicated in great numbers, typically in the millions, is currently having a major impact in computational imaging and quantum imaging. These two emerging
disciplines stand to take advantage of larger and larger SPAD image sensors with increasingly low jitter and noise, and high sensitivity. Finally, due to the computational power required at pixel level, power consumption must be reduced; we thus advocate the use of in situ computational engines, which, thanks of CMOS’ economy of scale and 3D-stacking, enable vast computation density. Some examples of this trend are given, along with a general perspective on SPAD image sensors. 

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Sony recently released a new 247MP rolling shutter CIS available in monochrome and color variants: IMX811-AAMR and IMX811-AAQR.

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