Archives for October 2016

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Sharp CMOS sensors lineup keeps evolving. Whereas a year and a half ago, Sharp used to have 7 CMOS products, the newly released catalog features just two of them:

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EMVA 1288 Release 3.1 standard is to include a new template for machine vision camera datasheet, among other improvements:

"The new release is now open for public review and discussion and will become the official release 3.1 on December 30, 2016, if no objections are filed.

The new release contains only a few refinements and additions, because release 3.0 proved already to be a robust and stable release. The major progress is the new data template sheet. This makes it easy to compare the main features of cameras with data summarized in a standardized way on a single page. The two other major additions are: total SNR curve including the spatial non-uniformities, and diagrams of horizontal and vertical profiles for illustration of the spatial non-uniformities. The document can be downloaded from EMVA’s website at http://www.emva.org/standards-technology/emva-1288/emva-standard-1288-downloads/"

Thanks to TL for the info!

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ST publishes a promotional video on its ToF sensors:

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XDA-Developers publishes a popular explanation of features of Sony IMX378 image sensor found in a number of recent smartphones, including Google Pixel.

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Image Sensor Americas conference to be held on October 25-26, 2016 in San Francisco, publishes an interview with Jonathan Phillips, Staff Image Scientist at Google. Jonathan talks about the main mobile imaging challenges:

"From an image quality standpoint, capturing images at low light continues to be a challenge for not only the image sensor but also the image processing. Fewer photons means less signal for the hardware, so the software has to do more to generate good images. Another challenge is the latency and accuracy of autofocus. Camera users want to capture in-focus memories without having a lag after pushing the shutter button. With moving objects and camera handshake, this isn't always easy."

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FLIR publishes a video on application possibilities for its low cost thermal imager:

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MIPI Alliance publishes Mixel and Northwest Logic presentation on its camera interface roadmap and progress:

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Reuters-1, Reuters-2: Sony will bring production of image sensors to full capacity in the October-March half-year, said Yasuhiro Ueda, president of Semiconductor Manufacturing Corp at a news conference on Friday at Sony's Kumamoto fab in southern Japan. The combined monthly production would rise to 73,000 wafers at Sony's five image sensor plants, from 70,000 wafers now.

"The business environment for our customers is improving," Ueda said. He said brisk demand for Sony's sensors reflects the firm's effort to diversify its client base, noting clients had recently experienced some ups and downs (does Uedo mean Apple?). "Our client portfolio is getting less reliant on specific customers, as we are adding Chinese smartphone makers that are recently thriving," he said.

He also said sensor shipments from the Kumamoto fab, which was damaged by a series of earthquakes earlier this year, have recovered to pre-disaster levels.

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IEDM 2016 to be held on December 3-7, 2016 in San Francisco publishes its agenda with many image sensor papers:

8.1 Backside Illuminated SPAD Image Sensor with 7.83μm Pitch in 3D-Stacked CMOS Technology,
T. Al Abbas, N. Dutton*, O. Almer, S. Pellegrini*, Y. Henrion* and R. Henderson, The University of Edinburgh, *STMicroelectronics

We present the first 3D-stacked backside illuminated (BSI) single photon avalanche diode (SPAD) image sensor capable of both intensity, and time-resolved imaging. The 128x120 prototype has a 7.83μm pixel pitch with 45% fill factor. A 40nm bottom tier hosts the processing electronics while a 65nm top tier hosts the photo-detectors.

8.2 256×256, 100kfps, 61% Fill-factor Time-resolved SPAD Image Sensor for Microscopy Applications,
I. Gyongy, N. Calder, A. Davies*, N. Dutton**, P. Dalgarno*, R. Duncan*, C. Rickman* and R. Henderson, University of Edinburgh, *Heriot-Watt University, **STMicroelectronics

A 256×256 Single Photon Avalanche Diode image sensor operating at 100kfps with 61% fill factor and 16µm pixel pitch is reported. Gating and cooling allow the suppression of dark noise, which, together with the high fill factor, enables competitive low-light performance with electron multiplying CCDs whilst offering time-resolved imaging.

8.3 An APD-CMOS Image Sensor Toward High Sensitivity and Wide Dynamic Range (Invited),
M. Mori, Y. Sakata, M. Usuda, S. Kasuga, S. Yamahira, Y. Hirose, Y. Kato, A. Odagawa and T.Tanaka, Panasonic Corp.

8.4 Novel Stacked CMOS Image Sensor with Advanced Cu2Cu Hybrid Bonding,
Y. Kagawa, N. Fujii*, K. Aoyagi*, Y. Kobayashi, S. Nishi, N. Todaka, S. Takeshita, J. Taura, H. Takahashi*, Y. Nishimura*, K. Tatani*, M. Kawamura, H. Nakayama, T. Nagano*, K. Ohno*, H. Iwamoto*, S. Kadomura and T. Hirayama, Sony Semiconductor Manufacturing, *Sony Semiconductor Solutions

We have successfully mass-produced novel stacked back-illuminated CMOS image sensors. In the new CIS, we introduced advanced Cu2Cu hybrid bonding that we had developed. The electrical test results showed that our robust Cu2Cu hybrid bonding achieved remarkable connectivity and reliability. The performance of image sensor was also investigated

8.5 An Over 1Mfps Global Shutter CMOS Image Sensor with 480 Frame Storage Using Vertical Analog Memory Integration,
M. Suzuki*, M. Suzuki*, R. Kuroda*, Y. Kumagai, A. Chiba, N. Miura, N. Kuriyama and S. Sugawa*, LAPIS Semiconductor Miyagi Co., Ltd., *Tohoku University

An over 1Mfps global shutter CMOS image sensor with 480 analog memories/pixel is presented using developed vertical analog memory integration technology. The fabricated prototype chip with 96H×128V pixels achieved ultra high speed video capturing at 1Mfps with 480 and 960 frames by full pixel and checkered-pattern half pixel modes, respectively.

8.6 A 1.8e- Temporal Noise Over 90dB Dynamic Range 4k2k Super 35mm Format Seamless Global Shutter CMOS Image Sensor with Multiple Accumulation Shutter Technology,
K. Kawabata, M. Kobayashi, Y. Onuki, H. Sekine, T. Tsuboi, Y. Matsuno, H. Takahashi, S. Inoue and T. Ichikawa, Canon Inc.

A low noise and high dynamic range global shutter (GS) CMOS image sensor (CIS) with multiple accumulation shutter technology is described. The pixel having a 6.4μm pitch, achieved 1.8e- temporal noise and full well capacity of 70,000e- with charge domain memory, corresponding to 92dB dynamic range in 30fps operation. In the signal readout procedure, light exposure and signal readout are executed simultaneously, hence the seamless signal accumulation can be carried out.

8.7 Four-Directional Pixel-Wise Polarization CMOS Image Sensor Using Air-Gap Wire Grid on 2.5-µm Back-Illuminated Pixels,
T. Yamazaki, Y. Maruyama, Y. Uesaka, M. Nakamura, Y. Matoba, T. Terada, K. Komori, Y. Ohba, S. Arakawa, Y. Hirasawa*, Y. Kondo*, J. Murayama*, K. Akiyama, Y. Oike, S. Sato and T. Ezaki, Sony Semiconductor Solutions, *Sony Semiconductor Manufacturing

This paper presents a four-directional pixel-wise polarization CMOS image sensor using an air-gap wire grid on 2.5µm back-illuminated pixels. The 150nm-pitch air-gap wire grid polarizer achieved the smallest polarization pixel with a transmittance of 63.3% and an extinction ratio of 85 at 550nm, realizing various mega-pixel fusion-imaging applications.

14.6 Current Status and Challenges of the Modeling of Organic Photodiodes and Solar Cells (Invited),
R. R. Clerc, B. Bouthinon*, M. Mohankumar**, P. Rannou**, J. Vaillant***, T. Maindron***, B. Racine***, Y.-F. Chen^, L. Hirsch^, J.-M. Verilhac^^, A. Pereira^^ and A. Revaux^^, Institut d Optique Graduate School, CNRS *ISORG, **INAC, CEA, ***CEA LETI, ^University of Bordeaux, ^^CEA, LITEN

Progress in the modeling of charge transport in solution processed solar cells and photodiodes is reviewed. Through several examples involving modeling and original experiments, the role of intentional doping, structural defects and oxygen contamination is discussed.

32.4 High-detectivity Printed Organic Photodiodes for Large Area Flexible Imagers (Invited),
A. Pierre and A. Arias, University of California, Berkeley

32.5 Dual-Gate Photosensitive FIN-TFT with High Photoconductive Gain and Near-UV to NearIR Responsivity,
H. Ou, K. Wang, J. Chen, A. Nathan*, S. Z. Deng and N. Xu, Sun Yat-sen Univeristy, *University of Cambridge

We report the first three-dimensional dual-gate photosensitive a-Si:H thin-film transistor operating in the sub-threshold regime for low-level light detection. The measured photoconductive gain is greater than 100 with photo-response ranging from near- ultraviolet to near-infrared wavelengths, making it a potential candidate as an image sensor for UV, visible, IR and X-rays.

32.6 Extending the Functionality of FDSOI N- and P-FETs to Light Sensing,
L. Kadura, L. Grenouillet, T. Bedecarrats, O. Rozeau, N. Rambal, P. Scheiblin, C. Tabone, D. Blachier, O. Faynot, A. Chelnokov and M. Vinet, CEA LETI

We demonstrate that FDSOI transistors co- integrated with a diode implemented below the buried oxide (BOX) become strongly sensitive to visible light. The carriers photogenerated in the diode create a Light Induced VT Shift (LIVS) in both NFET & PFET transistors by means of capacitive coupling, without direct electrical connection between the photodiode and the sensing transistor. This optical back biasing effect is carefully examined as a function of both transistor and diode technological parameters. The experimental results are supported by TCAD simulations, suggesting that the proposed FDSOI/photodiode co-integration scheme can be used for efficient photodetectors. We also study the transient effects, and propose an efficient reset mechanism. Finally, we demonstrate for the first time that SRAM cells can be made controllable by light illumination.

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LIPS ToF Camera received Taitronics 2016 Technology Innovation Award from Taiwan government:

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Google Pixel smartphone 12MP, 1.55um-pixel F2.0 camera earned top DxOMark scores:

Stills scores

Video scores

The Pixel camera does not have OIS. Instead, it uses gyroscope sampled at 200Hz to implement video stabilization with rolling shutter correction:



Update: More details from Google Pixel site:

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Rice University publishes a PhD Thesis "2D Optoelectronics: Challenges and Opportunities" by Sidong Lei dispelling some myths about graphene and similar 2D photodetectors:

"...the low absorption issue is more challenging in 2D materials, because the atomic thickness in 2D materials results in an intrinsically low absorption rate usually less than 10%. In typical single layered graphene, the absorption rate is about 2.3%.

As mentioned in the previous chapters, the low absorption rate is an issue must be face when fabricating an optoelectronic device. The issue should be more significant in atomically thin materials. However, one can easily found it is not always the case when reviewing recent publications in 2D photodetectors. It is very sarcastic that it is very common that 2D photodetector can have external quantum efficiency much higher than 100%, and it is more awkward that the society more or less accepts this strange phenomenon without careful consideration and even competes for even higher quantum efficiency. Table 3.1 listed some most cited reports stating very high quantum efficiency."


"But this does not means the 2D based photodetector is much more supreme than traditional silicon based photodetector. Actually, it can be found that most reported 2D photodetectors have very long response times, making the 2D photodetector nearly useless in actual application.

Pursuing higher responsivity is not blamable, but photoresponsivity is not the only key parameter that determines the performance of a photodetector and other optoelectronics. Other parameters such as response time, signal-to-noise ratio (S/N) are also as important, especially when facing the applications in optoelectronic communication, signal processing, etc. Consequently, the competition on photoresponsivity by compromising other indexes is unreasonable.

Even worse, few publications ever discussed the origin of such high quantum efficiencies in 2D photodetectors, leaving so much unpredictable, unrepeatable and irresponsible results and misleading the field."

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ResearchInChina publishes "Global and China Automotive Lens Industry Report, 2016-2020." Few quotes from the report:

"In 2015, the global shipments of OEM automotive lens approximated 48.5 million pieces, embracing 11.1 million pieces of front view automotive lens and 37.4 million pieces of rear view and surround view lens. In the next few years, the global shipment of OEM automotive lens will benefit from ADAS-related policies, maintain quick growth and reach 136.2 million pieces by 2020.

At present, the companies involved in the automotive lens industry are mostly traditional camera lens vendors, including Sekonix, Fujifilm, Sunny Optical, Largan Precision, GSEO, Union Optech, AbilityOpto-Electronics Technology and so on. Sunny Optical is the world's largest supplier of automotive lenses, serving Mobileye, Gentex, TRW, Valeo, Bosch, Continental, Delphi, Magna, among others. In 2015, Sunny Optical realized the shipment of 16.516 million pieces and enjoyed the market share of 34.1%."

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2017 Electronic Imaging Conference to be held on Jan 29-Feb. 2, 2017 in Burlingame, CA, USA (new location near SFO airport), announces its agenda with quite a lot of image sensor content. Few papers, out of many are below:

Keynotes:

• Bayer pattern and image quality, Joerg Künze, Basler AG (Germany)
• Silicon retina technology (Invited), Tobi Delbruck, Institute for Neuroinformatics (INI) (Switzerland)
• CMOS image sensor pixel design and optimization, Boyd Fowler, OmniVision Technologies USA
• Automotive imaging, Patrick Denny, VALEO (Ireland)
• In the quest of vision-sensors-on-chip: Pre-processing sensors for data reduction, Angel Rodríguez-Vázquez, Universidad de Sevilla (Spain)

Regular papers:

• A full-resolution 8K single-chip portable camera system, Tomohiro Nakamura, Takahiro Yamasaki, Ryohei Funatsu, and Hiroshi Shimamoto, NHK Science and Technology Research Laboratories (Japan)
• Filter selection for multispectral imaging optimizing spectral, colorimetric and image quality, Yixuan Wang, Rochester Institute of Technology USA
• Hot pixel rate behavior as pixel sizes go to 1 micron, Glenn Chapman, Rahul Thomas, Israel Koren, and Zahava Koren; Simon Fraser University (Canada) and University of Massachusetts Amherst USA
• Octagonal CMOS image sensor for endoscopic applications, Elena Reis, Alice Andrade, Martin Wäny, Pedro Santos, Ricardo M. Sousa, and Natércia Sousa, Awaiba,Lda (Portugal)
• Optimization of CMOS image sensor utilizing variable temporal multi-sampling partial transfer technique to achieve full-frame high dynamic range with superior low light and stop motion capability, Salman Kabir, Craig Smith, Gerrit Barnard, Alex Schneider, Frank Armstrong, Michael Guidash, Thomas Vogelsang, and Jay Endsley, Rambus Inc. USA
• A lateral electric field charge modulator with bipolar-gates for time-resolved imaging, Yuki Morikawa, Keita Yasutomi, Shoma Imanishi, Taishi Takasawa, Keiichiro Kagawa, Nobukazu Teranishi, and Shoji Kawahito, Shizuoka Univ. (Japan)
• RTS and photon shot noise reduction based on maximum likelihood estimate with multi-aperture optics and semi-photon-counting-level CMOS image sensors, Haruki Ishida, Keiichiro Kagawa, Shoji Kawahito, Taishi Takasawa, Keita Yasutomi, Bo Zhang, Min Seo, and Takashi Komuro; Shizuoka Univ. and Saitama Univ. (Japan)
• Linearity analysis of a CMOS image sensor, Fei Wang and Albert Theuwissen; Technische Univ. Delft (Netherlands) and Harvest Imaging (Belgium)

Thanks to AD for letting me know!

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Imec publishes a Vimeo video on its hyperspectral camera usage in the food quality control:

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PRNewswire: Axcelis has received its first order for the Purion VXE, a new extended energy range model of Purion XE high energy implanter. The new system delivers the highest energy range in the Purion platform. The customer plans to use the 300mm Purion VXE to support R&D for image sensors in the mobile and IoT markets. The system is scheduled to ship in the fourth quarter.

John Aldeborgh, EVP, customer operations, commented, "We're excited about the opportunity to provide this new model of the Purion XE platform to support the burgeoning image sensors and power device markets. The Purion EXE™ and VXE, provide the highest energy levels available in a production implanter, to perform ultra-high energy implants, with extremely precise and deep doping profiles."

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Delft University publishes MSc thesis "Characterization of CMOS Image Sensor" by Utsav Jain with fairly detailed description of measurement setups for most essential image sensor parameters.

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TSMC patent application US20160276285 "Method for forming alignment marks and structure of same" by Cheng-hsien Chou, Sheng-chau Chen, Chun-wei Chang, Kai-chun Hsu, Chih-yu Lai, Wei-cheng Hsu, Hsiao-hui Tseng, Shih Pei Chou, Shyh-fann Ting, Tzu-hsuan Hsu, Ching-chun Wang, Yeur-luen Tu, and Dun-nian Yaung proves that the company prepares STI-less pixel designs: "Embodiments presented below, for example, may describe formation of alignment marks for an image sensor formed without using a shallow trench isolation (STI) process."


Also, TSMC application US20160276382 talks about the STI-less isolation.

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BASF spin-off TrinamiX continues to develop its XperYenZ 3D sensor technology. According to LinkedIn, the company has 6 employees, mostly in Frankfurt, Germany area.

The company's 135-page patent application WO2016120392 "Detector for an optical detection of at least one object" by Sebastian Valouch, Ingmar Bruder, Robert Send, Christoph Lungenschmied, Wilfried Hermes, Erwin Thiel, and Stephan Irle gives quite a detailed overview of the imager:


"According to the so-called "FiP effect", the sensor signal, given the same total power of the illumination, is hereby dependent on a geometry of the illumination, in particular on a beam cross-section of the illumination on the sensor region.

Given the same total power of the illumination, the electrical conductivity of the sensor region, therefore, depends on the beam cross-section of the light beam in the sensor region, be denominated as a "spot size" generated by the incident beam within the sensor region. Thus, the observable property that the electrical conductivity of the photoconductive material depends on an extent of the illumination of the sensor region comprising the photoconductive material by an incident light beam particularly accomplishes that two light beams comprising the same total power but generating different spot sizes on the sensor region provide different values for the electrical conductivity of the photoconductive material in the sensor region and are, consequently, distinguishable with respect to each other.

Further, since the beam cross-section of the light beam in the sensor region, according to the above-mentioned FiP effect, given the same total power of the illumination, depends on the longitudinal position or depth of an object which emits or reflects the light beam which impinges on the sensor region, the longitudinal optical sensor may, therefore, be applied to determining a longitudinal position of the respective object."

"Figures 4 A to D show experimental results of further measurements in which the sensor region 130 of the longitudinal optical sensor 1 14 comprised lead sulfide (PbS) as the photoconductive material 134. Again, the setup of the optical detector 110 comprised a green light-emitting diode (LED) 158 which was placed 80 cm in front of the refractive lens 122 and which was, again, simultaneously employed as both the illumination source 156 for the optical wavelength of 530 nm and the object 112. The longitudinal optical sensor 1 14 with the photoconductive material 134 lead sulfide (PbS) was operated under a 10 V bias voltage provided by the bias voltage source 150. In this particular experiment, the light-emitting diode 158 was again used as the illumination source 156 which was modulated with a modulation frequency by means of the modulation device 162, wherein, however in contrast to the experiments as performed according to Figures 3A to C, different values for one of the photocurrent and the modulation frequency were applied. Consequently, the longitudinal sensor signal was, again, measured by using the lock-in amplifier 164."

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Omnivision's patent application US20160276380 "Photosensitive capacitor pixel for image sensor" by Wu-zang Yang, Chia-ying Liu, Chih-wei Hsiung, Chun-yung Ai, Dyson H. Tai, and Dominic Massetti proposes a capacitor as a sensing element in the pixel:


"In one embodiment, photosensitive semiconductor material 231 includes amorphous polysilicon. Amorphous polysilicon generally blocks wavelengths greater than 650 nm. Using amorphous polysilicon as photosensitive semiconductor material 231 potentially allows for the elimination of an infrared filter above pixel 410 to reject light above the non-visible spectrum.

Photosensitive semiconductor material 231 generates an image signal in the form of photoelectrons in response to receiving image light 205. The photoelectrons flow to storage node 221 via electrode 235 (and via metal connect 236 in the illustrated embodiment). After an exposure duration (a.k.a. an “integration period”), image charge generated by the image signal in charge storage node 221 can be transferred to floating drain 223 and eventually readout by readout circuitry."

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