SanDisk Extreme Pro v2 SSD review
Assorted News: Omdia, Amazon, Panasonic, IDQ
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GSMArena: Multi-camera phones conquer the market. According to Omdia, triple, quad, and penta cameras together occupy ~75% of the market in Q3 2020. Quad and penta camera devices alone are 60% of the Q3 market:
Amazon announces AWS Panorama device that turns any security cameras into an AI-enabled cloud-connected surveillance system:
3/12-min Papers
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IEEE Sensors publishes a number of 3/12-min presentation videos from its Oct. 2020 Conference:
Autosens-Detroit Slides
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Autosens-Detroit makes some of its presentations available after a free registration. Just few of many interesting slides are below:
DJI Pocket 2 review
DJI Pocket 2 review
Image Sensors at ISSCC 2021: Samsung 0.64um Pixel, Sony SPAD LiDAR, Sony Delta-Sigma ADC, Sony Stacked AI Processor
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ISSCC has announced its 2021 Advance Program with a lot of image sensor content. It starts from a Plenary Session:
There’s More to the Picture Than Meets the Eye (and in the future it will become only much more)Albert J. P. Theuwissen, Delft University of Technology & Harvest Imaging
Over the last five decades, solid-state imaging has gone through a difficult “childhood”, changing technology during its “adolescence”, and finally growing up to become a mature, “adult” that can compete with the human visual system when it comes to image quality. State-ofthe-art mobile devices enjoyed by consumers, rely on a multi-disciplinary mixture of analog electronics, digital circuits, mixed-signal design, optical know-how, device physics, semiconductor technology, and algorithm development. As a result, CMOS image sensors utilized in today’s mobile phones come close to perfection as far as imaging characteristics are concerned. However, this does not mean that further developments in the field are no longer necessary. On the contrary, new technologies and new materials are opening up new dimensions and new applications which complement the classical imaging functionality of sensors. This trend will ultimately convert the image sensor landscape from image capturing to smart vision. Consequently, the future of solid-state imaging will not only revolve around the shooting of beautiful images, as the market driver will no longer be limited only to mobile phones.
- A 4-tap 3.5μm 1.2Mpixel Indirect Time-of-Flight CMOS Image Sensor with Peak Current Mitigation and Multi-User Interference Cancellation
M-S. Keel, D. Kim, Y. Kim, M. Bae, M. Ki, B. Chung, S. Son, H. Lee, H. Jo, S-C. Shin, S. Hong, J. An, Y. Kwon, S. Seo, S. Cho, Y. Kim, Y-G. Jin, Y. Oh, Y. Kim, J. Ahn, K. Koh, Y. Park,
Samsung Electronics, Hwaseong, Korea - A 48×40 13.5mm Depth Resolution Flash LiDAR Sensor with In-Pixel Zoom Histogramming Time-to-Digital Converter
B. Kim, S. Park, J-H. Chun, J. Choi, S-J. Kim
Ulsan National Institute of Science and Technology, Ulsan, Korea;
Sungkyunkwan University, Suwon, Korea;
SolidVue, Suwon, Korea - A 189×600 Back-Illuminated Stacked SPAD Direct Time-of-Flight Depth Sensor for Automotive LiDAR Systems
O. Kumagai, J. Ohmachi, M. Matsumura, S. Yagi, K. Tayu, K. Amagawa, T. Matsukawa, O. Ozawa, D. Hirono, Y. Shinozuka, R. Homma, K. Mahara, T. Ohyama, Y. Morita, S. Shimada, T. Ueno, A. Matsumoto, Y. Otake, T. Wakano, T. Izawa
Sony Semiconductor Solutions, Atsugi, Japan;
Sony LSI Design, Atsugi, Japan;
Sony Depthsensing Solutions, Brussels, Belgium - A 256×128 3D-Stacked (45nm) SPAD FLASH LiDAR with 7-Level Coincidence Detection and Progressive Gating for 100m Range and 10klux Background Light
P. Padmanabhan, C. Zhang, M. Cazzaniga, B. Efe, A. R. Ximenes, M-J. Lee, E. Charbon
EPFL, Neuchâtel, Switzerland;
ADAPS Photonics, Shenzhen, China;
Intuitive Surgical, Aubonne, Switzerland
Facebook, Redmond, WA;
Korea Institute of Science and Technology, Seoul, Korea - A 250fps 124dB Dynamic-Range SPAD Image Sensor Stacked with Pixel-Parallel Photon Counter Employing Sub-Frame Extrapolating Architecture for Motion Artifact Suppression
J. Ogi, T. Takatsuka, K. Hizu, Y. Inaoka, H. Zhu, Y. Tochigi, Y. Tashiro, F. Sano, Y. Murakawa, M. Nakamura, Y. Oike
Sony Semiconductor Solutions, Kanagawa, Japan;
Sony Semiconductor Manufacturing, Nagasaki, Japan - High-Speed Back-Illuminated Stacked CMOS Image Sensor with Column-Parallel kT/C-Cancelling S&H and Delta-Sigma ADC
C. Okada, K. Uemura, L. Hung, K. Matsuura, T. Moue, D. Yamazaki, K. Kodama, M. Okano, T. Morikawa, K. Yamashita, O. Oka, I. Shvartz, G. Zeituni, A. Benshem, N. Eshel, Y. Inada
Sony Semiconductor Solutions, Kanagawa, Japan
Sony Semiconductor Manufacturing, Kumamoto, Japan
Sony Electronics, Ra’anana, Israel - A 0.2-to-3.6TOPS/W Programmable Convolutional Imager SoC with In-Sensor Current-Domain Ternary-Weighted MAC Operations for Feature Extraction and Region-of-Interest Detection
M. Lefebvre, L. Moreau, R. Dekimpe, D. Bol
Université catholique de Louvain, Louvain-la-Neuve, Belgium - A 1-inch 17Mpixel 1000fps Block-Controlled Coded-Exposure Back-Illuminated Stacked CMOS Image Sensor for Computational Imaging and Adaptive Dynamic Range Control
T. Hirata, H. Murata, H. Matsuda, Y. Tezuka, S. Tsunai
Nikon, Tokyo, Japan - 1/2.74-inch 32Mpixel-Prototype CMOS Image Sensor with 0.64μm Unit Pixels Separated by Full-Depth Deep-Trench Isolation
J. Park, S. Park, K. Cho, T. Lee, C. Lee, D. Kim, B. Lee, S. Kim, H-C. Ji, D. Im, H. Park, J. Kim, J. Cha, T. Kim, I-S. Joe, S. Hong, C. Chang, J. Kim, W. Shim, T. Kim, J. Lee, D. Park, E. Kim, H. Park, J. Lee, Y. Kim, J. Ahn, Y. Hong, C. Jun, H. Kim, C-R. Moon, H-K. Kang
Samsung Electronics, Hwaseong, Korea
R. Jain, P. Hillger, J. Grzyb, E. Ashna, V. Jagtap, R. Zatta, U. R. Pfeiffer
University of Wuppertal, Wuppertal, Germany
LiDAR News: Trioptics, ADI, Leddar, Innoviz, Luminar
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Trioptics sent me its presentation at Autosens Brussels 2020 about LiDAR optics alignment:
Breaking Si Pixel Speed Limit
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MDPI paper "Toward the Super Temporal Resolution Image Sensor with a Germanium Photodiode for Visible Light" by Nguyen Hoai Ngo, Anh Quang Nguyen, Fabian M. Bufler, Yoshinari Kamakura, Hideki Mutoh, Takayoshi Shimura, Takuji Hosoi, Heiji Watanabe, Philippe Matagne, Kazuhiro Shimonomura, Kohsei Takehara, Edoardo Charbon, and Takeharu Goji Etoh from Ritsumeikan University, Hanoi University of Science and Technology, IMEC, Osaka Institute of Technology, Osaka University, Link Research Corporation, Kindai University, and EPFL presents Ge PD to overcome the Si speed limit:
"The theoretical temporal resolution limit tT of a silicon photodiode (Si PD) is 11.1 ps. We call “super temporal resolution” the temporal resolution that is shorter than that limit. To achieve this resolution, Germanium is selected as a candidate material for the photodiode (Ge PD) for visible light since the absorption coefficient of Ge for the wavelength is several tens of times higher than that of Si, allowing a very thin PD. On the other hand, the saturation drift velocity of electrons in Ge is about 2/3 of that in Si. The ratio suggests an ultra-short propagation time of electrons in the Ge PD. However, the diffusion coefficient of electrons in Ge is four times higher than that of Si. Therefore, Monte Carlo simulations were applied to analyze the temporal resolution of the Ge PD. The estimated theoretical temporal resolution limit is 0.26 ps, while the practical limit is 1.41 ps. To achieve a super temporal resolution better than 11.1 ps, the driver circuit must operate at least 100 GHz. It is thus proposed to develop, at first, a short-wavelength infrared (SWIR) ultra-high-speed image sensor with a thicker and wider Ge PD, and then gradually decrease the size along with the progress of the driver circuits."
Fairchild Imaging Starts Sampling its 3rd Generation sCMOS Sensor with 0.5e- Read Noise, Demos Imaging at 0.0007 Lux Illumination
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While BAE Fairchild Imaging has announced the HWK4123 sensor in February, its sampling starts just now:
Trinamix Molecular Sensing for Smartphones
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VentureBeat publishes an article on Trinamix intention to enter smartphone market with its multispectral sensors for materials identification:
"The technology is called near-infrared spectroscopy, and it uses laser light to detect the molecular vibrations that distinguish different substances.
Trinamix said it intends to build a potent, yet miniaturized infrared sensing module for integration into smartphones. The module sends out infrared light, which is reflected from the object and detected by the sensor. The company said breakthroughs in research enabled it to reduce the size of the device down to a smartphone form factor while ensuring high-volume production capacities."
Metalens Paper
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APL Photonics paper "CMOS-compatible all-dielectric metalens for improving pixel photodetector arrays" by E. Mikheeva, J.-B. Claude, M. Salomoni, J. Wenger, J. Lumeau, R. Abdeddaim, A. Ficorella, A. Gola, G. Paternoster, M. Paganoni, E. Auffray, P. Lecoq, and S. Enoch from Institut Fresnel, Multiwave Imaging, University of Milano-Bicocca, CERN, FBK, and Multiwave Metacrystal SA proposes an improvement in SPAD array sensitivity:
"Metasurfaces and, in particular, metalenses have attracted large interest and enabled various applications in the near-infrared and THz regions of the spectrum. However, the metalens design in the visible range stays quite challenging due to the smaller nanostructuring scale and the limited choice of lossless CMOS-compatible materials. We develop a simple yet efficient design of a polarization-independent, broadband metalens suitable for many CMOS-compatible fabrication techniques and materials and implement it for the visible spectral range using niobium pentoxide (Nb2O5). The produced metalens demonstrates high transmittance and focusing ability as well as a large depth of focus, which makes it a promising solution for a new generation of silicon photomultiplier photodetectors with reduced fill factor impact on the performance and reduced electron–hole generation regions, which altogether potentially leads to improved photodetection efficiency and other characteristics."
Qualcomm’s Spectra 580 ISP: The Future of Photography?
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Qualcomm unveils the its latest triple ISP at 2020 Tech Summit:
Samsung Compares DTI with Skyscrapers, Promises 0.6X um Pixel Soon
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The recent Samsung Investor Forum presentation from Nov 24, 2020 by System LSI Group EVP Park Yong-in shows the company's plans to introduce 0.6X um pixel and compares its DTI aspect ratio with skyscrapers:
Samsung Compares DTI with Skyscrapers, Promises 0.6X um Pixel Soon
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The recent Samsung Investor Forum presentation from Nov 24, 2020 by System LSI Group EVP Park Yong-in shows the company's plans to introduce 0.6X um pixel and compares its DTI aspect ratio with skyscrapers:Terabee Introduction to ToF Sensing
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Terabee publishes a video explaining ToF principles:
GPixel Expands 2.5um GS Family with 18MP Sensor
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Gpixel expands the C-Mount GMAX product family with the GMAX2518, a 1” format Global Shutter CMOS sensor for industrial applications. The sensor is designed around the proven 2.5 µm charge domain global shutter pixel, provides 4508(H) x 4096(V) resolution (18 MP), and supports up to 64fps with 12bit output and 150fps with 10bit output.The 2.5 um pixel achieves a FWC of 8k e-, read noise less than 2 e- and maximum DR of 66dB. The sensor provides a peak QE of 65%, a PLS of -80dB.
With an outer dimension of 20.8 mm x 19.5 mm, GMAX2518’s 226-pin LGA ceramic package is designed to fit easily into a standard 29 mm x 29 mm camera housing.
“We are excited to offer customers another sensor in this very popular 2.5um-pixel family, now
supporting 4 unique cameras from only 1 hardware design. The expansion of Gpixel’s line up of C-mount compatible global shutter sensors empowers our customers to develop a broad portfolio of high performance cameras in the most resource efficient and cost effective way possible. This product is part of our fast growing GMAX product family, which we will continue to expand in the near future to help our customers make the most of their investment in Gpixel,” says Wim Wuyts, CCO of Gpixel.
GMAX2518 engineering samples can be ordered now for delivery in December 2020.
ST Claims #1 Position in ToF Sensors
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ST publishes an investor presentation on its AMS (Analog, MEMS & Sensors) Group's business positioning itself as #1 ToF company:
Digitimes on Sony CIS Business
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Digitimes Research reviews recent Sony CIS sales forecasts:
Sony CIS "sales for fiscal 2020 (April 2020-March 2021) to fall 11.8% on year compared to a 6.5% decline estimated earlier, due mainly to slackened demand for handset applications as global handset sales are projected to shrink by 10% in 2020, according to Digitimes Research.
...the estimated sales shrinkage will lead to an on-year reduction of 65.6% in fiscal 2020 operating incomes for the I&SS unit.
Sony has cut its budget for a three-year investment plan ending March 2021 by 12.9% to JPY610 billion (US$5.84 billion) from JPY700 billion. It is also actively exploring new clients to offset the loss of orders from Huawei, and developing AI-enabled CIS products in cooperation with Microsoft to boost competitiveness in the market, while also contracting TSMC to fabricate 3D-stacked image signal processors, according to Digitimes Research."
Sigma 35mm f2 DG DN review
Sigma 24mm f3.5 DG DN review so far
Sigma 65mm f2 DG DN review
Samsung Sued by Pictos Over Patent Infringement
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KoreaTimes: Samsung is facing the U.S. International Trade Commission's (USITC) investigation for allegedly infringing on image sensor patents held by Pictos Technologies. This is a fairly long story publicly presented in 2018 by Gil Amelio.
It's not clear what is the relation between the new Pictos and the old image sensor company under the same name that started as Rockwell spin-off and later acquired by ESS. Bloomberg reports that the new Pictos has been formerly known as Imperium IP.
UBS: iPhone 12 Pro 3D Cameras Cost 67% of 2D Cameras
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IFNews quotes UBS and Fomalhaut teardown analysis estimating 3D cameras in iPhone 12 Pro and Pro Max cost at 67% and 54% of the cost of 2D cameras, respectively:
UBS poll reveals that smartphone camera spec is rated #12 among the most desirable features. Other image sensor-based features like dual camera, on-display fingerprint, Face ID, and AR/VR functionality are all rated much lower than that:
Sony SLVS-EC Article
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Sony publishes an article on its image sensor interface Scalable Low-Voltage Signaling with Embedded Clock, abbreviated SLVS-EC. SLVS-EC is standardized by the Japan Industrial Imaging Association (JIIA). It looks similar to MIPI M-PHY, but has a slower speed of up to 5Gbps per lane.
Sony Releases 5um Pixel VGA ToF Sensor
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Sony releases a new 5um BSI ToF sensor - 5um pixel-based IMX570. The new VGA sensor is sampling now with mass production start planned for March 2021.
Sony Releases 5um Pixel VGA ToF Sensor
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Sony releases a new 5um BSI ToF sensor - 5um pixel-based IMX570. The new VGA sensor is sampling now with mass production start planned for March 2021.
Sony Buys Hundreds of Intel Patents
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IPNewsShots reports that Sony has bought hundreds of Intel patents to protect its image sensor business. Earlier, Sony also has quietly acquired IBM semiconductor patents.
iPhone 12 Teardown
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Nikkei and Fomalhaut Techno Solutions tore down the iPhone 12 and iPhone 12 Pro and checked the components origins:
iToF Phase Unwrapping Review
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Chronoptics CTO Refael Whyte publishes an overview of approaches to "Phase Wrapping and its Solution for Indirect Time-of-Flight Depth Sensing" with very nice animations:
