Oregon University Proposes Event-Driven Pixel with No Transistors

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AIP Applied Physics Letters publishes Oregon State University paper "A perovskite retinomorphic sensor" by Cinthya Trujillo Herrera and John G. Labrama.

"We found that capacitors based on metal halide perovskites will output a brief voltage spike in response to changes in incident light intensity, but output zero voltage under constant illumination. Such a sensor is not only optimized for use with spiking neuromorphic processors but also anticipated to have broad appeal from fields such as light detection and ranging, autonomous vehicles, facile recognition, navigation, and robotics."

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ON Semi Presents its HDR Sensors

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ON Semi video by Sergey Velichko presents the company's automotive HDR sensors:

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Velodyne Explains its Solid State LiDAR Design

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AutonmouStuff publishes Velodyne webinar explaining its new Velarray H800 operation:


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AIStorm Raises $16M in Round B to Commercialize its AI-in-Sensor Chip

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BusinessWireAIStorm has closed $16M in a Series B financing round from strategic investors that include AsusTek, Egis Technology, Knowles Corporation, Meyer Corporation, and Senvest Management, a New York-based venture capital firm. In 2019, AIStorm raised $13.2M in Round A funding.

AIStorm’s approach is the only technology that allows the sensor to couple directly to popular convolutional neural networks. This allows AIStorm to deliver true, template-based ‘always-on’ at the edge—at prices that deep-submicron digital competitors cannot match for the same performance. This is a winning formula in the highly competitive IoT sector,” said David Schie, CEO of AIStorm.

AIStorm’s charge-domain processing is said to accept charge directly from the sensor, such as electrons from a pixel, and multiplies that charge directly. AIStorm’s partners benefit from an AI-at-the-edge technology that is scalable, offers MAC efficiencies up to several thousand TOPS per watt, and works with conventional tool flows.

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Tower and OPIX Present VGA iToF Sensor with 5um Stacked BSI Pixels

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GlobeNewswireTower and China-based OPIX announce a successful development of pulsed iToF technology platform for 3D imaging and face recognition, based on Tower’s pixel level wafer stacking BSI technology.

Utilizing TOWER’s 65nm pixel-level stacked BSI CIS technology and fabricated in its Uozu, Japan facility the sensor is said to be the first in a series of iToF products.

The sensor that is currently being prototyped to customers features a 5µm 3-tap iToF pixel and resolution of 640×480 pixels. The BSI technology improves its NIR sensitivity.  In addition, the wafer stacking enables very high modulation frequencies of up to 165 MHz and 30 depth fps.

The sensor is said to have industry-leading depth accuracy at short, mid and long-range distances even in challenging ambient light conditions by using pulse modulation iToF technique. Advanced features include multiple acquisition modes, depth with single and dual frequency, low-power standby modes and MIPI CSI-2 interface.

The sensor is said to be a cost effective all-in solution for various 3D imaging applications, especially for the mobile market.

At Opix, we worked hard during the past 18 months in order to make this development successful. 3D imaging becomes ubiquitous in all imaging markets nowadays and as a CEO I am very proud to see us competing already on spec level with known solutions of tech giants,” said Xinyang Wang, CEO at Opix.  “With our 100% focus and dedication to 3D imaging and support of our partners, we have a strong belief we can play an important role in the coming years to serve the market with innovative solutions for the emerging 3D imaging market.”   

We are very excited about our collaboration with the Opix team of experts who helped  bring to the market this new, world-class iToF technology,” said Avi Strum, SVP and GM of the Sensors and Displays Business Unit, Tower Semiconductor. “This highly advanced technology comprehensively meets the challenging requirements and specifications of a small sized iToF imager and demonstrates our notable capabilities and fervent commitment to provide our customers with market-leading imaging solutions.

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Tower and OPIX Present VGA iToF Sensor with 5um Stacked BSI Pixels

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GlobeNewswireTower and China-based OPIX announce a successful development of pulsed iToF technology platform for 3D imaging and face recognition, based on Tower’s pixel level wafer stacking BSI technology.

Utilizing TOWER’s 65nm pixel-level stacked BSI CIS technology and fabricated in its Uozu, Japan facility the sensor is said to be the first in a series of iToF products.

The sensor that is currently being prototyped to customers features a 5µm 3-tap iToF pixel and resolution of 640×480 pixels. The BSI technology improves its NIR sensitivity.  In addition, the wafer stacking enables very high modulation frequencies of up to 165 MHz and 30 depth fps.

The sensor is said to have industry-leading depth accuracy at short, mid and long-range distances even in challenging ambient light conditions by using pulse modulation iToF technique. Advanced features include multiple acquisition modes, depth with single and dual frequency, low-power standby modes and MIPI CSI-2 interface.

The sensor is said to be a cost effective all-in solution for various 3D imaging applications, especially for the mobile market.

At Opix, we worked hard during the past 18 months in order to make this development successful. 3D imaging becomes ubiquitous in all imaging markets nowadays and as a CEO I am very proud to see us competing already on spec level with known solutions of tech giants,” said Xinyang Wang, CEO at Opix.  “With our 100% focus and dedication to 3D imaging and support of our partners, we have a strong belief we can play an important role in the coming years to serve the market with innovative solutions for the emerging 3D imaging market.”   

We are very excited about our collaboration with the Opix team of experts who helped  bring to the market this new, world-class iToF technology,” said Avi Strum, SVP and GM of the Sensors and Displays Business Unit, Tower Semiconductor. “This highly advanced technology comprehensively meets the challenging requirements and specifications of a small sized iToF imager and demonstrates our notable capabilities and fervent commitment to provide our customers with market-leading imaging solutions.

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Sony Presents its Automotive HDR Technology

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Sony marketing publishes a video "Key technology for addressing sensing application in automotive:"

 

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NHK Selenium Image Sensor

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Nature publishes NHK and Tokyo University of Science paper "Enhanced image sensing with avalanche multiplication in hybrid structure of crystalline selenium photoconversion layer and CMOSFETs" by Shigeyuki Imura, Keitada Mineo, Yuki Honda, Toshiki Arai, Kazunori Miyakawa, Toshihisa Watabe, Misao Kubota, Keisuke Nishimoto, Mutsumi Sugiyama, and Masakazu Nanba.

"The recent improvements of complementary metal–oxide–semiconductor (CMOS) image sensors are playing an essential role in emerging high-definition video cameras, which provide viewers with a stronger sensation of reality. However, the devices suffer from decreasing sensitivity due to the shrinkage of pixels. We herein address this problem by introducing a hybrid structure comprising crystalline-selenium (c-Se)-based photoconversion layers and 8 K resolution (7472 × 4320 pixels) CMOS field-effect transistors (FETs) to amplify signals using the avalanche multiplication of photogenerated carriers. Using low-defect-level NiO as an electric field buffer and an electron blocking layer, we confirmed signal amplification by a factor of approximately 1.4 while the dark current remained low at 2.6 nA/cm2 at a reverse bias voltage of 22.6 V. Furthermore, we successfully obtained a brighter image based on the amplified signals without any notable noise degradation."

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First Commercial Curved CMOS Sensor from Startup CURVE

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CURVE-ONE startup (France) announces its first commercial curved sensor (English version starts on p. 2).

"The first public studies in the field of curved sensors are back in the 2000’s. If most of the largest world class sensors companies developed their home-made process, none of them made it a commercial product. The go-to-market strategy applied by the start-up CURVE, supported by the European Commission through the European Research Council programs, made it become an available product. Fruit of years of research and development for astrophysical instrumentation, the commercialization of curved and freeform sensors is now a reality.

The imaging of extended scenes (wide field), has always been a challenge as optical systems naturally curve the focal surface. The bending of photographic plates has been used routinely in many fields, even astronomy with the use of Schmidt telescopes which naturally have a convex focal surface.

The advent of flat electronic sensors has been a revolution, forcing optical designers to introduce additional optics to fit the flatness of these sensors surface. The classical problem of the planisphere appeared then: a huge distortion is created by the imaging system on the edge of the field. Additional complexity came along with the distortion: field flatteners increase the volume and mass of systems, and chromatic aberrations appear. Also, the imaging response is not uniform across the field.

The development of curved sensors is a bio-inspired approach. Mimicking the eye retina, this new technology impacts every future imaging system. By directly correcting the field curvature in the focal plane of imagers, the use of curved sensors suppresses the field flatteners. Less optics means less misalignments and instrumental errors, increases the stability and image homogeneity, and reduces the dependence to environmental condition. Thereby it improves image acquisition quality and then reduces image post-processing costs.

CURVE is now targeting the mass production of its curved sensor, with the support of the European Commission as well as the support of the European Space Agency."

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More about NHK 3-Layer Organic Sensor

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NHK publishes another article about its 3-layer organic sensor:

"The number of pixels in the organic image sensor we have developed is 320 (horizontal) × 240 (vertical), the pixel pitch is 20 μm, and the frame rate is 60 Hz.

We will continue our R&D efforts to reduce the pixel sizes, increase the number of pixels, and reduce noise, thus accelerating the realization of compact, high-resolution single-chip color cameras.

Note: The blue-sensitive organic film was developed in collaboration with Nippon Kayaku Co., Ltd."

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Tutorial on Gesture Recognition with 3D Integral Imaging

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OSA Advances in Optics and Photonics publishes a tutorial paper "Fundamentals of automated human gesture recognition using 3D integral imaging: a tutorial" by Bahram Javidi, Filiberto Pla, José M. Sotoca, Xin Shen, Pedro Latorre-Carmona, Manuel Martínez-Corral, Rubén Fernández-Beltrán, and Gokul Krishnan from University of Connecticut (USA), Massachusetts College of Liberal Arts (USA), Institute of New Imaging Technologies(Spain), University of Burgos (Spain), University of Valencia (Spain).

"This tutorial presents an overview of the fundamental components and basics of the current 3D optical image acquisition technologies for gesture recognition, including the most promising algorithms. Experimental results illustrate some examples of 3D integral imaging, which are compared to conventional 2D optical imaging. Examples of classifying human gestures under normal and degraded conditions, such as low illumination and the presence of partial occlusions, are provided. This tutorial is aimed at an audience who may or may not be familiar with gesture recognition approaches, current 3D optical image acquisition techniques, and classification algorithms and methodologies applied to human gesture recognition."

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Current-Assisted SPAD with Improved NIR PDE

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MDPI paper "Current-Assisted SPAD with Improved p-n Junction and Enhanced NIR Performance" by Gobinath Jegannathan, Thomas Van den Dries, and Maarten Kuijk from Vrije Universiteit Brussel, Belgium, promises dramatic improvements:

"Single-photon avalanche diodes (SPADs) fabricated in conventional CMOS processes typically have limited near infra-red (NIR) sensitivity. This is the consequence of isolating the SPADs in a lowly-doped deep N-type well. In this work, we present a second improved version of the “current-assisted” single-photon avalanche diode, fabricated in a conventional 350 nm CMOS process, having good NIR sensitivity owing to 14 μm thick epilayer for photon absorption. The presented device has a photon absorption area of 30 × 30 µm2, with a much smaller central active area for avalanche multiplication. The photo-electrons generated in the absorption area are guided swiftly towards the central area with a drift field created by the “current-assistance” principle. The central active avalanche area has a cylindrical p-n junction as opposed to the square geometry from the previous iteration. The presented device shows improved performance in all aspects, most notably in photon detection probability. The p-n junction capacitance is estimated to be ~1 fF and on-chip passive quenching with source followers is employed to conserve the small capacitance for bringing monitoring signals off-chip. Device physics simulations are presented along with measured dark count rate (DCR), timing jitter, after-pulsing probability (APP) and photon detection probability (PDP). The presented device has a peak PDP of 22.2% at a wavelength of 600 nm and a timing jitter of 220 ps at a wavelength of 750 nm."

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Multispectral Filter with No Need in Alignment

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OSA publishes a paper "Alignment-free filter array: Snapshot multispectral polarization imaging based on a Voronoi-like random photonic crystal filter" by Kazuma Shinoda and Yasuo Ohtera from Utsunomiya University and Toyama Prefectural University, Japan.

"We develop a photonic crystal filter with a new structure and propose a method to realize a snapshot multispectral polarization camera by mounting the filter on a monochrome imager with no requirement for a specific alignment. The developed filter is based on the Voronoi structure, which forms multilayered photonic crystals with random wave-like structures in each of the Voronoi cells. Because the transmission characteristics of the multilayered photonic crystal can be controlled simply by changing the microstructure, there is no need to change the manufacturing process and materials for each Voronoi cell. Furthermore, the Voronoi cell is randomly distributed so that the filter can be junctioned with the imager at arbitrary positions and angles without the need to position the filter during mounting, although it requires measurement of the camera characteristics and an image restoration process after filter mounting. In this experiment, we evaluated to reconstruct spectra as well as linearly polarized components and RGB images in the visible wavelength range from a single exposure image."

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LiDAR News: Innoviz and Aeva Investor Presentations

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PRNewswire: Innoviz is to become publicly listed on NASDAQ through a merger with Collective Growth Corporation. The transaction is expected to provide up to $350M in gross proceeds comprised of Collective Growth's $150M of cash held in trust, assuming no redemptions by public stockholders, and a $200M fully committed ordinary share PIPE.

The transaction is expected to close in Q1 2021 and bring Innoviz valuation of $1.4B post-money with enterprise value of about $1B.

Innoviz investor presentation shows the company's business details:


Aeva too publishes its investor presentation toward its ongoing merger with InterPrivate Acquisition Corp:

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LiDAR News: Innoviz and Aeva Investor Presentations

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PRNewswire: Innoviz is to become publicly listed on NASDAQ through a merger with Collective Growth Corporation. The transaction is expected to provide up to $350M in gross proceeds comprised of Collective Growth's $150M of cash held in trust, assuming no redemptions by public stockholders, and a $200M fully committed ordinary share PIPE.

The transaction is expected to close in Q1 2021 and bring Innoviz valuation of $1.4B post-money with enterprise value of about $1B.

Innoviz investor presentation shows the company's business details:


Aeva too publishes its investor presentation toward its ongoing merger with InterPrivate Acquisition Corp:

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Hynix on Key CIS Technologies

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 SK Hynix publishes an article "Applying Light to Semiconductors: Introducing to CIS Key Process Technologies."

"The pixel size should be more reduced to increase the number of pixels in the same chip size. Also, forming deep PD is a key technology to avoid deterioration in image quality. To secure sufficient full well capacity (FWC) in small pixels, patterning and implementing technologies with higher difficulty level compared to the ones for semiconductor memory are required. Especially, it is essential to secure a high aspect ratio (>15:1) implant MASK process technology that can block high-energy ion implantation; in fact, the aspect ratio tends to be gradually increasing in the industry these days.

The technology to isolate pixels from one another is very important to make a high-definition CIS. A less developed isolation technology can cause various image defects such as color mixing and color spreading. Each chipmaker has different isolation technology, and the difference will be an important criterion for image quality in the CIS market where higher pixel density and higher resolution are becoming common standards. Various issues can occur during the isolation process. For this reason, huge efforts are being made to select better equipment and develop new recipes to improve yield and product quality.

One of the most fundamental requirements in the CIS product development and mass production process is to control metallic contamination. Since CIS products are sensitive to contamination several times more than memory products and the contamination directly affects product yield and quality, various contamination control technologies are required. The next important factor is the plasma damage control. Since the deterioration of image properties such as hot pixels occurs due to the damage caused during the process, it is necessary to manage key processes accurately."

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Sony vs Samsung

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KoreaEconimicDaily: Samsung is switching its 13th DRAM production line to production of image sensors. The company expects its CIS sales to rise by 20% in 2021.

Samsung LSI EVP Park Yong-in says that the company “isn’t producing enough wafers to meet the rising demand.” Under the expansion plan, Samsung’s monthly image sensor production capacity will increase to as many as 120,000-130,000 wafers from the current 100,000 units, amounting to annual sales of 4.6 trillion won ($4.26 billion). That compares with Sony’s estimated monthly production of 137,000 wafers in 2021, according to market research firm Omdia.

TSR forecasts the average smartphone will use a 112MP sensor in 2024, up from 59MP this year. Samsung plans to focus on high-end products to increase its market share.

According to KPMG, the global image sensor market is forecast to grow at an average annual rate of 12% to $143B in 2030 from $47B this year.

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ActLight Launches Stand-Alone Dynamic PhotoDiode IP

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PRNewswire: ActLight announces the expansion of its IP portfolio with the launch of a Stand-Alone Dynamic Photodiode.  Customers can choose the size of the detector from a wide range, e.g. from 0.2 sq.mm to 1 sq.cm, to match with their needs in applications such as proximity sensing, light barriers, time of flight, vital signs monitoring and many others.

"We are very pleased to offer to our customers additional innovative IP in the field of light sensing," said Serguei Okhonin, Co-founder and CEO at ActLight. "The Stand-Alone Dynamic PhotoDiode complements our exisitng IP portfolio and represent the opportunity for our customers to stretch their market reach and augment their business opportunities with innovative solutions."

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Besi and EVG Address Die-to-Die and Die-to-Wafer Hybrid Bonding Needs

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GlobeNewswire: Applied Materials and BE Semiconductor Industries N.V. (Besi) announced an agreement to develop the industry’s first complete and proven equipment solution for die-based hybrid bonding.

Applied and Besi have formed a joint development program and are establishing a Center of Excellence focused on next-generation chip-to-chip bonding technology. The program harnesses the companies’ respective front- and back-end semiconductor expertise to deliver co-optimized integrated hybrid bonding configurations and equipment solutions for customers.

A complete die-based hybrid bonding equipment solution requires a broad suite of semiconductor manufacturing technologies along with high-speed and extremely precise chiplet placement technology. To achieve this, the joint development program brings together Applied’s semiconductor process expertise in etch, planarization, deposition, wafer cleaning, metrology, inspection and particle defect control with Besi’s leading die placement, interconnect and assembly solutions.


PRNewswire: Wafer-to-wafer (W2W) hybrid bonding, which involves stacking and electrically connecting wafers from different production lines, is a central process in heterogeneous integration and has a proven track record of success for certain applications such as CMOS sensors. However, in cases where the components or dies are not the same size, die-to-wafer (D2W) hybrid bonding offers a viable pathway to heterogeneous integration. With its new D2W EVG320 activation system EVG supports D2W bonding applications.

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Intel 3D Cameras Presentation

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Framos publishes a webinar about Intel Realsense 3D camera lineup:


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ams Adapts Endoscopic Camera Module to Other Applications

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BusinessWire: ams announces a pre-release of one of the industry’s smallest, lightest 100k pixel image sensors suitable for use in mobile or wearable consumer devices like VR headsets.

The new NanEyeC image sensor is supplied as a lensed, chip-scale module which has a footprint of 1mm2 and weighs about 1g. Combining a wide-angle view with a good depth of focus, the NanEyeC offers the speed and picture quality needed for an emerging set of video applications where the camera must be virtually invisible to the end user, or be accommodated in a very small space. They include:

  • Eye tracking in VR or augmented reality (AR) headsets or frames
  • People detection and counting in building automation systems such as smart lighting and air conditioning
  • Object detection and avoidance in robotic equipment such as autonomous vacuum cleaners or the smallest of drones
  • Toys and model trains for an immersive experience
  • Capsule endoscopy or dental imaging tools

Dina Aguiar, Marketing Manager for the Micro Camera Module product line at ams, says: “Due to the NanEye’s tiny dimensions and high image quality, the product family already has a loyal following among medical endoscopes manufacturers. Now the NanEyeC consumer version offers the same quality and performance in a compact SGA package suitable for mounting on the space-constrained PCB in wearable or mobile devices.

The NanEyeC camera is a full-featured image sensor supplied as a 1mm x 1mm lensed surface-mount module. It provides digital image data at a maximum resolution of 320px x 320px, and when in Single Ended Interface Mode (SEIM) can achieve a maximum speed of 58 frames/s.

The sensor’s digital LVDS or SEIM interfaces connect it to any host microcontroller or applications processor. The sensor also has an idle mode for reduced power consumption.

The NanEyeC image sensor is available for sampling, in addition an evaluation kit can be ordered.

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Imec Presents Thin Film SWIR Sensor with 1.82um Pixel Pitch