IEDM Papers Review

Image Sensors World        Go to the original article...

Semiconductor Engineering publishes Mark Lapedus review of IEDM 2017 Imaging Session papers:

- TSMC and EPFL presented "a paper on what they call the world’s first back-illuminated 3D-stacked, single-photon avalanche diode (SPAD) in 45nm CMOS technology.

The SPAD achieves a dark count rate of 55.4cps/μm2, a maximum photon detection probability of 31.8% at 600nm, over 5% in the 420-920nm wavelength range, and timing jitter of 107.7ps at 2.5V excess bias voltage at room temperature.

- Sony presented "a paper on a CMOS photon detector - a non-electron-multiplying CMOS image sensor photon detector. Based on a 90nm process, Sony’s CMOS photon detector features 15μm pitch active sensor pixels with a complete charge transfer and readout noise of 0.5 e- RMS.

The pixel circuit is a conventional 4T pixel. The pixels are arrayed, resulting in a high conversion gain of 132uV/e-, according to the paper. The photodiode is expanded to a size of 14.7μm x 13.1μm in a pixel with a pitch of 15μm, resulting in a physical fill factor of 76% without using back illumination. 4 pixels in a column are simultaneously accessed and read.

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