Gate/Body-tied MOSFET Image Sensor Proposes

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Sensors and Materials publishes a paper "Complementary Metal Oxide Semiconductor Image Sensor Using Gate/Body-tied P-channel Metal Oxide Semiconductor Field Effect Transistor-type Photodetector for High-speed Binary Operation" by Byoung-Soo Choi, Sang-Hwan Kim, Jimin Lee, Chang-Woo Oh, Sang-Ho Seo, and Jang-Kyoo Shin from Kyungpook National University, Korea.

"In this paper, we propose a CMOS image sensor that uses a gate/body-tied p-chnnel metal oxide semiconductor field effect transistor (PMOSFET)-type photodetector for highspeed binary operation. The sensitivity of the gate/body-tied PMOSFET-type photodetector is approximately six times that of the p–n junction photodetector for the same area. Thus, an active pixel sensor with a highly sensitive gate/body-tied PMOSFET-type photodetector is more appropriate for high-speed binary operation."

The 3T-style pixel uses pmos instead of PD and has a non-linear response. Probably, its inherent non-linearity has been the main reason that the binary operation mode is proposed:

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