1T Pixels in China

Image Sensors World        Go to the original article...

Fudan University, Shanghai, PISD "successfully combines all functionalities in one transistor. This can largely simplify the pixel design and improve its efficiency. Considering the huge market of image sensor, the development of PISD is very helpful for China to break the monopoly in the global market."

Fudan University's IEEE EDL paper "A Novel One-Transistor Active Pixel Sensor With In-Situ Photoelectron Sensing in 22 nm FD-SOI Technology" by Yong-Feng Cao, M. Arsalan, J. Liu, Yu-Long Jiang, and J. Wan "is commented as “revolutionary” by its reviewer." From the abstract:

"For the first time, a novel active pixel sensor (APS) with 22 nm fully depleted silicon-on-insulator (FD-SOI) technology is experimentally demonstrated. The APS in-situ integrates photo sensing, charge integration, buffer amplification, and random access in one transistor without charge transfer and assistance of additional transistors. The deep depletion effect in the substrate of the SOI MOSFET is used to collect photoelectrons which are then sensed by the top Si channel. A sensor array is proposed and high sensitivity is experimentally verified in a simplified circuit."


IEEE JEDS publishes Peking University, Beijing, open-access paper "UTBB-Based Single Transistor Image Sensor of Submicron Pixel Using Back Gate Modulation" by Liqiao Liu, Xiaoyan Liu, and Gang Du:

"Image sensor has developed for decades. Now, submicron photo sensor device with high performance is required. In this work, a UTBB (ultra-thin body and box) based single transistor image sensor has been investigated. The light collection and signal readout are accomplished by a single transistor, so the pixel of the UTBB image sensor can shrink down to the submicron. The main parameters impacting the performance of the UTBB image sensor such as back voltage, the thickness of the BOX, well doping concentration and well depth are investigated. Besides, the UTBB image sensor can achieve multi-resolution to adapt to different requirements. The performance of the UTBB image sensor is evaluated by TCAD simulations."

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1T Pixels in China

Image Sensors World        Go to the original article...

Fudan University, Shanghai, PISD "successfully combines all functionalities in one transistor. This can largely simplify the pixel design and improve its efficiency. Considering the huge market of image sensor, the development of PISD is very helpful for China to break the monopoly in the global market."

Fudan University's IEEE EDL paper "A Novel One-Transistor Active Pixel Sensor With In-Situ Photoelectron Sensing in 22 nm FD-SOI Technology" by Yong-Feng Cao, M. Arsalan, J. Liu, Yu-Long Jiang, and J. Wan "is commented as “revolutionary” by its reviewer." From the abstract:

"For the first time, a novel active pixel sensor (APS) with 22 nm fully depleted silicon-on-insulator (FD-SOI) technology is experimentally demonstrated. The APS in-situ integrates photo sensing, charge integration, buffer amplification, and random access in one transistor without charge transfer and assistance of additional transistors. The deep depletion effect in the substrate of the SOI MOSFET is used to collect photoelectrons which are then sensed by the top Si channel. A sensor array is proposed and high sensitivity is experimentally verified in a simplified circuit."


IEEE JEDS publishes Peking University, Beijing, open-access paper "UTBB-Based Single Transistor Image Sensor of Submicron Pixel Using Back Gate Modulation" by Liqiao Liu, Xiaoyan Liu, and Gang Du:

"Image sensor has developed for decades. Now, submicron photo sensor device with high performance is required. In this work, a UTBB (ultra-thin body and box) based single transistor image sensor has been investigated. The light collection and signal readout are accomplished by a single transistor, so the pixel of the UTBB image sensor can shrink down to the submicron. The main parameters impacting the performance of the UTBB image sensor such as back voltage, the thickness of the BOX, well doping concentration and well depth are investigated. Besides, the UTBB image sensor can achieve multi-resolution to adapt to different requirements. The performance of the UTBB image sensor is evaluated by TCAD simulations."

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