Archives for November 2014

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Chinese-language site cnBeta.com publishes what it says is a datasheet of Sony 1.5-inch 4.85MP IMX189AEG image sensor featuring "Active Pixel Color Sampling." The new stacked sensor features rectangular 9.78um x 4.89um pixels with global shutter. The site says that each pixel can sense three RGB colors. The sensor is planned to be used in an oncoming Sony Xperia Z4 smartphone. Very fast frame rates are quoted:


Another stacked Sony sensor appearing in other cnbeta.com post is 1MP IMX197HSK. It has a square 9.78um global shutter pixel and features high frame rates:


Via Android Headlines.

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International Conference on Optoelectronics and Microelectronics Technology and Application to be held on Nov. 12-14 in Tianjin, China, has an interesting paper by Qinghong Cao, Rockchip Electronics Co., China "A High Sensitivity CMOS Image Sensor Design with Complementary CFA and CCD Compatible Interface." Rockchip is one of the biggest application processors vendors in China, recently entered into a strategic alliance with Intel. The paper might be an early indication that the company is entering the image sensor market.

Update: It appears that Qinghong Cao, the author of the paper, used to work for Brigates, and possibly presents his former work on MCCD.

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PR Newswire: CEVA announces that Novatek has selected the CEVA-MM3101 imaging and vision DSP for its next-generation SoC targeting the surveillance, action camera and automotive markets. Novatek will integrate the programmable CEVA-MM3101 into their SoC designs to add computer vision capabilities including scene analysis, machine vision, depth mapping and object detection in a flexible and power efficient manner.

"Integrating advanced vision processing capabilities with our imaging SoCs allows our customers to design products offering a new level of interactivity with the real world and show real product differentiation," Tommy Chen, VP at Novatek. "The CEVA-MM3101 imaging and vision DSP provides the processing horsepower while extending the device battery life and flexibility to implement innovative, intelligent imaging algorithms for any end application."

"We are pleased to partner with Novatek and excited by the potential offered by integrating our advanced imaging and vision DSP into their SoC roadmap," said Gideon Wertheizer, CEO of CEVA. "This is another instance of the growing popularity of the CEVA-MM3101 as a dedicated processor for computer vision and enables Novatek and their customers to reuse the design to address multiple market segments."

CEVA-MM3101 applications

CEVA-MM3101 architecture

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Imaging Resource: Lytro announces Lytro Platform and Lytro Development Kit (LDK) opening a possibility to design a customized light field camera for any application.

LDK illustration. Actual may differ from the illustration.

LDK illustration. Actual may differ from the illustration.

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One of the recent mobile phone trends is a dual rear camera where the two cameras are 90-deg rotated with respect to each other to shoot pictures in horizontal and vertical direction, such as in Pixavi ImpactX phone:


Omnivision patent application US20140320715 "Imaging systems and methods using square image sensor for flexible image orientation" by Bahman Haji-khamneh, Harish Iyer, and Vinoo Margasahayam, implements this feature with a single square image sensor:

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SPIE/IS&T Electronic Imaging Conference, to be held on Feb. 12-15, 2015 in San Francisco, publishes its Advance Program. Image Sensors and Imaging System and Digital Photography and Mobile Imaging tracks have many interesting image sensor papers. Just to name a few:

2.2um BSI CMOS image sensor with two layer photo-detector
Authors: Hiroki Sasaki, Toshiba Corp. (Japan)
Abstract:
Back Side Illumination (BSI) CMOS image sensor with a Two-layer (2L) photo detector has been fabricated and evaluated. The BSI test pixel array has Green pixel (2.2um x 2.2um) and Magenta pixel (2.2um x 4.4um). Green pixel has single-layer (1L) photo detector, Magenta pixel has 2L photo detector and vertical charge transfer (VCT) path for back side photo detector. 2L photo detector and VCT were implemented by high-energy ion implantation from circuit side. The structure of 2L photo detector was measured by Scanning Spreading Resistance Microscopy (SSRM). Measured spectral response curves from 2L photo detector fit well with those estimated based on light-absorption theory for Silicon detectors. Our measurement results show that the keys to realize 2L photo detector in BSI pixel are; (1) reduction of crosstalk to the vertical charge transfer path from adjacent pixels and (2) controlling backside photo detector thickness variance to reduce color signal variation.

Signal conditioning circuits for 3D-integrated burst image sensor with on-chip A/D conversion
Authors: Rémi Bonnard, Fabrice Guellec, Josep Segura Puchades, CEA-LETI (France); Wilfried Uhring, Institut de Physique et Chimie des Matériaux de Strasbourg (France)
Abstract:
Ultra High Speed (UHS) imaging is at the forefront of the imaging technology for some years now. These image sensors are used to shoot high speed phenomenon that require about hundred images at Mega frame-per-seconds such as detonics, plasma forming, laser ablation… At such speed the data read-out is a bottleneck and CMOS and CCD image sensors store a limited number of frames (burst) on-chip before a slow read-out. Moreover in recent years 3D integration has made significant progresses in term of interconnection density. It appears as a key technology for the future of UHS imaging as it allows a highly parallel integration, shorter interconnects and an increase of the fill factor. In the past we proposed an idea of 3D integrated burst image sensor with on-chip A/D conversion that overcome the state of the art in term of frame-per-burst. This sensor is made of 3 stacked layers respectively performing the signal conditioning, the A/D conversion and the burst storage. We present here different solutions to implement the analogue front-end of the first layer. We will describe three circuits for three purposes (high frame rate, power efficiency and sensitivity). All these front-ends perform global shutter acquisition.

A high-sensitivity 2x2 multi-aperture color camera based on selective averaging
Authors: Bo Zhang, Keiichiro Kagawa, Taishi Takasawa, Min-Woong Seo, Keita Yasutomi, Shoji Kawahito, Shizuoka Univ. (Japan)
Abstract:
To demonstrate the low-noise performance of the multi-aperture imaging system using a selective averaging method, an ultra-high-sensitivity multi-aperture color camera with 2×2 apertures is being developed. In low-light conditions, random telegraph signal (RTS) noise and dark current white defects become visible, which greatly degrades the quality of the image. To reduce these kinds of noise as well as to increase the number of incident photon, the multi-aperture imaging system composed of an array of a lens and a CMOS image sensor (CIS), and the selective averaging for minimizing the synthetic sensor noise at every pixel is utilized. It is verified by simulation that the effective noise at the peak of noise histogram is reduced from 1.38 e- to 0.48 e- in a 3×3-aperture system, where RTS noise and dark current white defects have been successfully removed. In this work, a prototype based on low-noise color sensors with 1280×1024 pixels fabricated in 0.18um CIS technology is designed. The pixel pitch is 7.1μm×7.1μm. The noise of the sensor is around 1e- based on the folding-integration and cyclic column ADCs, and the low voltage differential signaling (LVDS) is used to improve the noise immunity. The synthetic F-number of the prototype is 0.6.

Simulation analysis of a backside illuminated multi-collection gate image sensor
Authors: Vu Truong Son Dao, Takeharu Goji Etoh, Ritsumeikan Univ. (Japan); Edoardo Charbon, Zhang Chao, Technische Univ. Delft (Netherlands); Yoshinari Kamakura, Osaka Univ. (Japan)
Abstract:
We have proposed a new structure, a backside-illuminated multi-collection gate (BSI MCG) image sensor. The target frame rate is 1 Gfps. Each pixel has a group of collection gates (CG) located around its center. Image signals can be selectively collected by each of the CGs. After collection of a signal charge packet by a CG, the charge packet can be transferred to in-situ storage placed around the CGs during the collection of signals by other CGs. However, it is difficult to operate multiple CGs at the frame interval of 1ns with driving voltages delivered from a conventional off-chip driver. We proposed a special integrated structure on which: a driver chip comprises multiple ring oscillator (RO) drivers, each of which is equipped with an XNOR circuit; each RO driver is vertically connected to a group of pixels of the MCG BSI image sensor mounted on a different wafer by TSV technology. This approach provides advantages, such as: (1) reduction of interconnect resistance and capacitance; (2) perfect electrical isolation between the imaging and the driver chips; (3) driving voltages can be delivered almost evenly to all the pixels. We designed a test chip including an imaging device and a RO driver to evaluate various fundamental characteristics, though, at this moment; these devices were not stacked. The imaging device consists of: (a) 32x48 pixels driven by a conventional driver; (b) 1x2 pixels driven by a test RO driver from a separate dice. Each pixel is a hexagonal MCG BSI one that stores 5 consecutive images. The test RO driver with XNOR circuits that can drive a 10fF capacitive load. A time-to-digital converter with temporal resolution of 30ps is included to measure the actual pulse width. A modified 130nm 1P5M CMOS Image Sensor process is used to fabricate the test chip. We obtained the following simulation results: (1) In each pixel, mean and standard deviation of the electron travel time were 0.62ns and 0.17ns, respectively. The maximum travel time was from 0.6ns to 1.4ns if a generation site was near the center to near the edge of a pixel. (2) The RO driver can achieve a pulse width of 1.4ns with a voltage swing of 4.2V and 20% overlapping pulses. The minimum pulse width reduced to 0.77ns with a decreased voltage swing of 2.6V and 25% overlapping pulses. Therefore, we can confirm that the proposed test chip can achieve the target.

Analysis of pixel gain and linearity of CMOS image sensor using floating capacitor load readout operation
Authors: Shunichi Wakashima, Fumiaki Kusuhara, Rihito Kuroda, Shigetoshi Sugawa, Tohoku Univ. (Japan)
Abstract:
In this paper, we demonstrate that the floating capacitor load readout operation has higher readout gain and wider linearity range than conventional pixel readout operation, and report the reason. The pixel signal readout gain is determined by the transconductance, the backgate transconductance and the output resistance of the in-pixel driver transistor and the load resistance. In floating capacitor load readout operation, since there is no current source and the load is the sample/hold capacitor only, the load resistance approaches infinity. Therefore readout gain is larger than that of conventional readout operation. And in floating capacitor load readout operation, there is no current source and the amount of voltage drop is smaller than that of conventional readout operation. Therefore the linearity range is enlarged for both high and low voltage limits in comparison to the conventional readout operation. The effect of linearity range enlargement becomes more advantageous when decreasing the power supply voltage for the lower power consumption. To confirm these effects, we fabricated a prototype chip using 0.18um 1-Poly 3-Metal CMOS process technology with pinned PD. As a result, we confirmed that floating capacitor load readout operation increases both readout gain and linearity range.

A SPAD-based 3D imager with in-pixel TDC for 145ps-accuracy ToF measurement
Authors: Ion Vornicu, Ricardo A. Carmona-Galán, Ángel B. Rodríguez-Vázquez, Instituto de Microelectrónica de Sevilla (Spain)
Abstract:
Single-Photon Avalanche Diodes (SPAD) can be employed to detect the arrival of a reflected pulse of light, thus emerging as a feasible alternative for generating a depth map of the scene. SPADs arranged in a bi-dimensional array can effectively associate an estimation of the time-of-flight (ToF) to each point in the image. In this paper, we will deal with the exact time stamping of the detection event. For this to be achieved, we have incorporated an 11b resolution time-to-digital converter (TDC) to each pixel of a 64 × 64-SPAD array. The sensor chip has been designed in a 0.18μm standard CMOS technology, achieving a pixel pitch of 64μm. The complete sensor array fits in 4.1 × 4.1mm2. Each pixel contains a SPAD, an active quenching and recharge circuit, a ripple counter, a voltage-controlled ring oscillator (VCRO), an encoder and 11b memory. A minimum time bin of 145ps can be detected, for a power consumption of 9μW per TDC. A PLL provided on-chip tunes the reference voltage for the array VCROs, in order to overcome global drift of process parameter and temperature variations. The measured standard deviation of the TDCs across the array is 1% without applying any pixel-to-pixel calibration.

An ISO standard for measuring low light performance
Author: Dietmar Wüller, Image Engineering GmbH & Co. KG (Germany)
Abstract:
To measure the low light performance of todays cameras has become a challenge. The increasing quality for noise reduction algorithms and other steps of the image pipe makes it necessary to investigate the balance of image quality aspects. The first step to define a measurement procedure is to capture images under low light conditions using a huge variety of cameras and review the images as well as the metadata of these images. Image quality parameter need to be identified and a threshold below which the image gets unacceptable needs to be defined for each parameter. Although this may later on require a real psychophysical study to increase the precision of the thresholds the current project tries to find out wether each parameter can be viewed as an independent one or if multiple parameters need to be grouped to differentiate acceptable images from unacceptable ones. Another important aspect is what camera settings are allowed? For example what is the longest acceptable exposure time and how is this affected by image stabilization. Cameras on a tripod may produce excellent images with multi second exposures. After this analysis the question is how the light level gets reported? Is it the illuminance of the scene, the luminance of a certain area in the scene or the exposure?

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Point Grey video gives a sneak peek of Sony next generation global shutter CMOS sensor, the IMX250  (starting at 2:15 time). The new 5MP 2/3-inch sensor has a smaller pixel size, and a more effective global shutter:


Update: Michael Jacoby, Point Grey's marketing and the author of the company's videos, says in comments to the video "the IMX250 is a long long way from production but our testing shows it has similar imaging performance (quantum efficiency , dynamic range, low temporal dark noise) as the current Pregius sensors (imx174, imx249) and in some cases is better. Major differences is the smaller sensor size and smaller pixel size."

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Pixart reports its Q3 2014 results with sales going down both QoQ and YoY:

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Photonics-Spectra publishes an article "PMD Camera Enhances 3-D Imaging" by John Gilmore (Hamamatsu) and Slawomir Piatek (NJIT). The article talks about Hamamatsu S11963-01CR 160x120 ToF sensor operation and performance:

Hamamatsu pixel

Indirect ToF principle

The accuracy of the camera using 10-μs pulses (3000 pulses per frame) from an 8 × 8 array of LEDs (λ = 870 nm, full width half maximum = 45 nm), IR-transmission filter HOYA IR83N, f/1.2 lens (focal length 8 mm), and a 160 × 120-pixel Hamamatsu S11963-01CR sensor (pixel size 30 × 30 μm, field of view = 37.5° × 27.7°) is graphed below:

Distance uncertainty as a function of collected charge

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Sofradir posts 8 video demos of thermal imaging capabilities of its low-cost subsidiary ULIS. Two of them below show ULIS VGA and 80x80 pixel sensors:




Meanwhile, Photonics-Spectra publishes Teledyne DALSA review article "Microbolometers Move Thermal Imaging into Next-Gen Commercial Uses" by Cees Draijer.

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IMV Europe: Odos Imaging 1.3MP ToF camera wins Vision Show Award. Chris Yates, Odos CEO, says "as a company we are absolutely delighted, as well as deeply honoured, to receive the VISION AWARD 2014, particularly since so many outstanding products and companies were nominated. Our 3D vision systems represent a new direction for the machine vision industry, seeking to provide high-resolution 3D imaging with the same ease of use as conventional industrial cameras. Bringing together multiple technologies in order to create innovative products is often challenging, requiring talent, belief, and hard work. The recognition provided by this award gives a huge boost to our world-class team, who have successfully overcome many barriers in bringing our flagship product to market, the real.iZ VS-1000 megapixel 3D vision system. At the same time, we recognise the tremendous benefit that the machine vision industry has provided as an open, welcoming, and highly knowledgeable community for a young company to join."

Yates says the company already has a 4MP version under testing in laboratory conditions. "A complete family of products is planned, covering a wide range of cost and performance points. Excellent underlying technology drivers are present with lower noise and more sensitive pixel designs possible as well as a wider range of more efficient light sources available, all providing an attractive product development programme and an optimistic future for the company."

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Point Grey video features new Sony global shutter sensor, the 1/1.2-inch IMX249, that appears to be a slower low-cost version of the last year's IMX174. Both sensor share the same 1920 x 1200 resolution, same 5.86um pixel size, but the new IMX249 supports 40fps speed in 10b mode or 30fps at 12b, while the older IMX174 supports 162fps.

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Petapixel publishes an article on Sony US20140321766 patent application "Image processing apparatus, image processing method, and program" by Jo Kensei proposing different exposure for different pixels in a regular pattern, and a special processing to compensate the difference in image blur:

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Rambus blog posts Patrick Gill proposal to extend the company's lensless imageing idea to thermal imagers. Presented in June 2013, Lensless smart sensor (LSS) technology is designed to capture data rich images using a low-cost phase grating.

"Using traditional methods, wide-angle lens system designs require multiple elements, which mean they won’t work well for thermal sensing. Practically, very few affordable focusing thermal systems offer more than about a 50-degree field of view. However, a lensless smart sensor (LSS) manufactured from a single thermal diffraction grating could capture intelligible signals from a larger range of incident angles – perhaps greater than 100 degrees. In fact, a large field of view combined with the higher selling price of thermal imaging systems (compared to their visible-light counterparts) could mean that wide-angle thermal sensing will be one of the first commercially advantageous applications of LSS technology," said Gill.

Thanks to DSSB for the link!

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LowLightVideos publishes a video demo of Omnivision OV10640 OmniBSI 4.2um pixel sensor for automotive applications. The notable points in the video:

• 0:10 Driving down the road there are clouds in the night sky that can be seen, yet oncoming headlights are not blinding.
• 0:18 Driving in the underground during the day provides a fairly good image, though the trees outdoors are a bit washed out.
• 0:55 Driving into the Sun does not oversaturate the Sensor. Next, a turn into a dark underground which quickly and smoothly brightens up as we enter.
• 1:40 All those Headlights create a tiny bit of glare, but the clouds look pretty good in the night sky. Very little noise visible.
• 4:00 At night the Streetlights never get too bright and the glare is never too great, yet the sky has visible clouds and very little noise.

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Imec presents a BSI CMOS sensor featuring a new anti-reflective coating (ARC) optimized for UV light. Targeting imaging solutions in new markets such as life sciences, the achievement is an important addition to imec’s customized 200mm CMOS fab. This 200mm process line enables imec to offer design, prototyping and low volume manufacturing of custom specialty chip solutions such as highly specialized CMOS image sensors.

Imec has already developed an ARC for visible light range (400nm-800nm) with >70% QE over the entire spectral range. Imec’s new ARC, targeting the UV range, shows excellent performance at near UV wavelengths, with QE above 50% over the entire spectral range from 260nm to 400nm wavelength.

“This is an important milestone for imec’s customized 200mm CMOS process line, demonstrating our expertise and capability to design, prototype and manufacture high-end CMOS image sensors,” said Rudi Cartuyvels, SVP, Smart Systems & Energy Technologies at imec. “The development widens our portfolio towards new markets, offering solutions for both visible and UV imaging in semiconductor equipment applications, such as advance lithography and wafer and mask inspection.”

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Business Wire: ON Semiconductor's 2.1MP/30fps KAE-02150 CCD uses an innovative HDR output circuit allowing either CCD (low-gain) or EMCCD (high-gain) outputs to be utilized on a pixel-by-pixel basis within the same image. Charge from each individual pixel is measured and the signal level is compared to a user selectable threshold in the camera system to determine where each charge packet is routed. Pixels from very low-light regions of the scene can be selectively routed to the EMCCD output, while pixels from bright regions of the image – which would typically saturate an EMCCD register and distort the image – are routed to the conventional CCD output amplifier. With this intra-scene switchable gain feature, signals from both outputs can then be re-combined, allowing one camera to properly render bright regions in a dark field of view and enabling dynamic compensation under changing conditions such as headlights entering or leaving an extreme low light scene.

“As the first device to leverage our new Interline Transfer EMCCD technology, the KAE-02150 Image Sensor delivers a revolutionary solution to the industry,” said Chris McNiffe, VP of image sensor products at ON Semiconductor. “By extending the superb image quality and uniformity of CCD devices into the extreme low-light regime, customers in industrial markets now have access to a new level of performance under the most challenging imaging conditions. This is a clear demonstration of ON Semiconductor’s unique ability to bring the most advanced imaging solutions to our customers by leveraging its expansive base of imaging technologies.”

The KAE-02150 CCD is sampling now, and will be available in Monochrome and Bayer Color configurations. An evaluation kit including hardware and software will also be available by the end of 2014, allowing the performance of this new device to be characterized by customers for their specific applications.


Business Wire: ON Semi also introduce two new global shutter CMOS sensors in its PYTHON family. The new PYTHON 2000 and PYTHON 5000, with resolutions of 2.3MP and 5.3MP respectively, aim to general purpose industrial image sensing such as machine vision, inspection and motion monitoring, as well as security, surveillance and intelligent transportation systems (ITS).

“The PYTHON family delivers a high-speed imaging solution without compromising image quality,” said Chris McNiffe. “A choice of resolutions all supported by a single PCB – plus programmability and numerous features that enhance performance – combine to make the PYTHON family an important addition to the market that will allow designers of industrial image systems to meet the most stringent demands from their customers.”

ON Semiconductor’s patented in-pixel CDS (ipCDS) technology enables global shutter imaging with CDS in a 4.8um pixel size, combining a read noise of 9 e- with 7.7 V/lux sensitivity and frame rates as high as 850fps (VGA). Both new sensors are available in mono, color and extended NIR variants. PYTHON 2000 and PYTHON 5000 are sampling now, with full production expected in Q1 2015.

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Caeleste reports that closed its 2013-2014 fiscal year with a revenue of 2.718 million euros, an increase of 93% over the previous year. The company aims to become an exclusive high-end custom design design house for sensor solutions in the fields of industrial, scientific and medical imaging. Caeleste is now 7 years old and employs 19 people, a growth of 60% over the previous year.

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CNES, Airbus Defense & Space, THALES Alenia Space, SODERN and ISAE organize two workshops in Toulouse, France on November the 26 and 27, 2014. The 3rd edition of the workshop on "Radiation Effects on Optoelectronic Detectors" will be held on November 26 and starts with a tutorial:

How to perform radiation test on optoelectronic detector
Françoise Bezerra, Olivier Gilard, CNES

The regular sessions agenda is:

• Ionizing radiation effects on CCDs over a very wide range of doses
  P. Jerram,E2V technologies, T. Hatsui, RIKEN, A. Holland, XCAM
• Low temperature Total Dose Irradiation of DifferentTransistor Topologies for Infrared Applications
  T. Nuns, J-P. David, S. Soonckindt, ONERA O. Gilard, K. Sanchez, CNES, F. Perrier, S. Ducret, SOFRADIR
• ITAR free rad hard detectors for high reliability applications
  J. Leijtens, Lens Research & Development ESIC, T. Brosowski, First Sensor A.G.
• Gamma Ray and Proton Beam Exposures of Teledyne DALSA 5T Pixel Structures and Outlook for Future Radiation Hard Devices
  O. Cherry, Teledyne Dalsa
• Monte Carlo Transport Code for Image Sensor Radiation Analysis
  C. Inguimbert, T. Nuns, M.C. Ursule, ONERA, D. Hervé, M. Beaumel,SODERN
• Exploring the Kinetics of Formation and Annealing of Single Particle Displacement Damage in Microvolumes of Silicon
  M. Raine, P. Paillet, O. Duhamel, M. Gaillardin, N. Richard, CEA DAM, V. Goiffon, P. Magnan, ISAE, S. Girard, Université Saint-Etienne, C. Virmontois, CNES
• Validation of a Model for Dark Current Non-Uniformity due to Displacement Damage Dose in irradiated CMOS Image Sensors
  J-M. Belloir, V. Goiffon, ISAE Image Sensor Research Team, P. Paillet, M Raine, CEA DAM, C. Virmontois, CNES
• Development of a Cryogenic Irradiation Test Facility and the Results from a CCD236 Swept Charge Device
  J. Gow, P. H. Smith, A. D. Holland, N. J. Murray, The Open University, P. Pool, E2V technologies
• TID and Low energy proton effects on large pitch InGaAs array
  J. Vermeiren, Xenics
• In orbit degradation of frame transfer CCD and other studies on different image sensors
  C. Durnez, V. Goiffon, ISAE Image sensor research team, C. Virmontois, CNES
• Radiation-Induced Dose and Single Event Effects on Digital CMOS Image Sensors
  C. Virmontois, A. Toulemont, G. Rolland, A. Materne, C. Codreanu, C. Durnez, A. Bardoux, CNES, V. Lalucaa, V. Goiffon, ISAE
• Roscosmos facilities for single event effects testing: state-of-the-art and future plans
  P.A. Chubunov, V.S. Anashin, United Rocket Space Corporation, Institute of Space Device Engineering
• Tests results of Russian–made photo-receiving matrix on hardness to the influence of space ionizing radiation
  A.V. Vlasov, V.S. Anashin, P.A. Chubunov, S.A. Yakovlev, United Rocket Space Corporation, Institute of Space Device Engineering
• Single Event Transient and Single Event Upset electrical simulation under Cadence based on MUSCA –SEP current sources in 0,18/0,35 CIS process
  F. Barbier, T. Ligozat, E2V Technologies

Another workshop "Image Sensors Optical Interfaces" is focused on improvement of the capability to collect incident photon is a main driver for image sensors. The workshop agenda for Nov. 27 is:

• Plasmonic filters
  G. Vincent, R. Haidar, ONERA
• Design of plasmonic lenses dedicated to Near Infrared detection (1,064 m) with CMOS image sensors
  T. Lopez,S. Massenot, M. Estribeau, P. Magnan, ISAE, J-L Pelouard, Laboratoire de Photonique et de Nanostructures, LPN-CNRS
• Development of a multispectral infrared focal plane array based on sub-wavelength metal patch arrays
  N. Père-Laperne, P. Le Boterf, L. Rubaldo, D. Joubert-Bousson SOFRADIR, R. Espiau de Lamaestre, M. Brun, N. Rochat, S. Bissotto, A. Perez, CEA, LETI, MINATEC
• REOSC - Multispectral thin film coating on detector - Mozaïc project
  M. Oussalah, SAFRAN
• Interference metal/dielectric filters integrated on CMOS image sensors
  L. Frey, L. Masarotto, J. Raby, P. Parrein, C. Pellé, M. Armand, M-L. Charle, CEA, LETI, MINATEC, M. Marty, S. Lhostis, J. Michailos, E. Mazaleyrat, D. Hérault, STMicroelectronics
• Pixelated Multilayer Thin Film Filters For Multispectral Imagers
  M. Lequime, L. Abel-Tiberini, C. Hecquet, J. Lumeau, Institut Fresnel K. Gasc, J.Loesel, J. Berthon, CNES
• Space environment effects on CMOS microlenses and color filters
  C. Virmontois, C. Codreanu, A. Materne, A. Bardoux, CNES, E. Berdin, M. Bréart de Boisanger, Airbus DS, M. Estribeau, V. Goiffon, ISAE, Image Sensor Reseach Team
• Optimisation of CMOS sensor optical interfaces
  P. Jerram, E2V technologies
• Microlens back-end process using UV polymer replication on CMOS wafers
  P. Dannberg, A. Oelschläger, R. Leitel, H-C. Eckstein, L. Stürzebecher, A.Matthes, P.Schreiber, A. Bräuer, Fraunhofer

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PRNewswire: OmniVision announces the 1/2.3-inch 23.8MP OV23850 and 1/2.4-inch 21.4MP OV21840, a family of PureCel-S stacked sensors for the next generation of flagship smartphones.

"Industry experts anticipate that 20+ megapixel image sensors will be the next popular resolution threshold for flagship smartphones in 2015. The OV23850 and OV21840 are designed to facilitate the adoption of this resolution range by smartphone OEMs," said Harish Iyer, senior product marketing manager at OmniVision. "We see the megapixel race in the smartphone segment as heating up, with flagship smartphones reaching toward not only DSC-comparable resolutions, but also advanced features such as fast autofocus, HDR mode, burst mode and slow motion video that today are characteristically restricted to DSCs. The OV23850 and OV21840 can provide OEMs with the opportunity to make the full range of these advanced capabilities a reality for their new flagship devices."

The stacked technology is said to enable additional sensor functionalities, such as phase detection autofocus (PDAF), two-dimensional contrast fast autofocus and HDR video, while maintaining a small footprint. OmniVision plans to combine the two-dimensional contrast-based fast autofocus, which is up to 4x faster than traditional contrast autofocus, with PDAF to offer an optimized hybrid fast autofocus function.

The 23.8MP OV23850 can capture images at 24 fps speed, while 21.4MP OV21840 supports 27 fps speed at full resolution. Both are capable of recording quad high definition (QHD) video at 30 fps in HDR mode to enable 'always on' HDR preview mode for a resolution size popular with flagship smartphone displays. Additionally, the sensors support 720p120 and 1080p90 video modes.

The OV23850 and OV21840 fit into 10.5 x 10.5 mm modules with z-heights of 6.3 and 6 mm, respectively. Both sensors are currently sampling and are expected to enter volume production in Q1 2015.

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Korea Economic Daily reports that Peter Thiel, one of the legendary Silicon Valley investors and a former PayPal CEO, has acquired 3% stake in Korean image sensor maker PixelPlus. Reportedly, he paid 10 billion won (about $9.3M) , putting the company valuation at about 330 billion won, or $310M. Analysts expect the company value to jump to 500 billion won next year when it is to make IPO on the KOSDAQ. Pixelplus founder and president Lee Seo-gyu is said to own 24.4% stake in the company.

Pixelplus posted 149.4 billion won in sales revenue and 46.5 billion won in operating profit last year.

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Caeleste paper and presentation "Cryogenic and Radiation-Hard ASIC for Interfacing Large Format NIR/SWIR Detector Arrays" by Peng Gao, Benoit Dupont, Bart Dierickx, Eric Müller, Geert Verbruggen, Stijn Gielis, Ramses Valvekens, presented at ICSO 2014, Tenerife, Spain, talks about the challenges to make circuit work at liquid nitrogen temperature, among other things:

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Sony reports quarterly image sensor sales increase and updates its FY 2014 sales forecasts (Sony fiscal year ends on March 31, 2015):

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Google Trends tracks the number of search on different keywords over time. This might be an indication of general public interest in different things. Searches for "image sensor" and related terms seem to be fairly constant over the last 5 years after a peaking in 2004 (marked as 100% on the graphs):

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