Archives for December 2019

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Gpixel announces a NIR-enhanced version of its GMAX0505 sensor, a 26MP global shutter CMOS sensor in a square 1.1” optical format. The GMAX0505 and the new NIR-enhanced GMAX0505RF are part of Gpixel’s 2.5 µm pixel family of pin-compatible C-mount sensors for industrial and scientific applications.

Typically, NIR sensitivity is enhanced by increasing the thickness of the sensor’s epitaxial layer. However, this impacts MTF and limits the effective resolution of the sensor. The new Red Fox process modifies the
sensor’s sensitive layer to achieve an optimal balance between NIR sensitivity and MTF.

The GMAX0505RF achieves a QE of almost 34% at 850 nm and 14% at 940 nm. In comparison, based on publicly available EMVA test data some competitive image sensors only offer a QE of 20% at 850 nm. This equates to a 70% improvement in QE performance.

As the Red Fox process can be applied to any GMAX products, Gpixel’s anticipates other GMAX RF products will be released in the near future. Engineering samples of the GMAX0505RF are available now for evaluation.

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ISSCC 2020 to be held in San Francisco on Feb. 16-20 publishes its agenda with heavy emphasis on ToF imaging. The biggest surprise is a joint Prophesee and Sony paper on event-based sensor:

• A 240×192Pixel 10fps 70klux 225m-Range Automotive LiDAR SoC Using a 40ch 0.0036mm2 Voltage/Time Dual-Data-Converter-Based AFE
  S. Kondo, H. Kubota, H. Katagiri, Y. Ota, M. Hirono, T. T. Ta, H. Okuni, S. Ohtsuka, Y. Ojima, T. Sugimoto, H. Ishii, K. Yoshioka, K. Kimura, A. Sai, N. Matsumoto,
  Toshiba, Japan
• A 1200×900 6μm 450fps Geiger-Mode Vertical Avalanche Photodiodes CMOS Image Sensor for a 250m Time-of-Flight Ranging System Using Direct-Indirect-Mixed Frame Synthesis with Configurable-Depth-Resolution Down to 10cm
  T. Okino, S. Yamada, Y. Sakata, S. Kasuga, M. Takemoto, Y. Nose, H. Koshida, M. Tamaru, Y. Sugiura, S. Saito, S. Koyama, M. Mori, Y. Hirose, M. Sawada, A. Odagawa, T. Tanaka,
  Panasonic, Nagaokakyo, Japan
• An Up-to-1400nm 500MHz Demodulated Time-of-Flight Image Sensor on a Ge-on-Si Platform
  C-L. Chen, S-W. Chu, B-J. Chen, Y-F. Lyu, K-C. Hsu, C-F. Liang, S-S. Su, M-J. Yang, C-Y. Chen, S-L. Cheng, H-D. Liu, C-T. Lin, K. P. Petrov, H-W. Chen, K-C. Chu, P-C. Wu, P-T. Huang, N. Na, S-L. Chen,
  Artilux, Hsinchu, Taiwan
• A Dynamic Pseudo 4-Tap CMOS Time-of-Flight Image Sensor with Motion Artifact Suppression and Background Light Cancelling Over 120klux
  D. Kim, S. Lee, D. Park, C. Piao, J. Park, Y. Ahn, K. Cho, J. Shin, S. M. Song, S-J. Kim, J-H. Chun, J. Choi,
  Sungkyunkwan University, Suwon,
  Ulsan National Institute of Science and Technology, Ulsan, Korea
  Zeeann, Hanam, Korea
• A 2.1e-Temporal Noise and -105dB Parasitic Light Sensitivity Backside-Illuminated 2.3μm-Pixel Voltage-Domain Global Shutter CMOS Image Sensor Using High-Capacity DRAM Capacitor Technology
  J-K. Lee, S. S. Kim, I-G. Baek, H. Shim, T. Kim, T. Kim, J. Kyoung, D. Im, J. Choi, K. Cho, D. Kim, H. Lim, M-W. Seo, J. Kim, D. Kwon, J. Song, J. Kim, M. Jang, J. Moon, H. Kim, C. K. Chang, J. Kim, K. Koh, H. Lim, J. Ahn, H. Hong, K. Lee, H-K. Kang,
  Samsung Electronics, Hwaseong, Korea
• A 1/2.65in 44Mpixel CMOS Image Sensor with 0.7µm Pixels Fabricated in Advanced Full-Depth Deep-Trench Isolation Technology
  H. Kim, J. Park, I. Joe, D. Kwon, J. H. Kim, D. Cho, T. Lee, C. Lee, H. Park, S. Hong, C. Chang, J. Kim, H. Lim, Y. Oh, Y. Kim, S. Nah, S. Jung, J. Lee, J. Ahn, H. Hong, K. Lee, H-K. Kang,
  Samsung Electronics, Hwaseong, Korea
• A 132dB Single-Exposure-Dynamic-Range CMOS Image Sensor with High Temperature Tolerance
  Y. Sakano, T. Toyoshima, R. Nakamura, T. Asatsuma, Y. Hattori, T. Yamanaka, R. Yoshikawa, N. Kawazu, T. Matsuura, T. Iinuma, T. Toya, T. Watanabe, A. Suzuki, Y. Motohashi, J. Azami, Y. Tateshita, T. Haruta,
  Sony Semiconductor, Japan
• A 0.50erms Noise 1.45μm-Pitch CMOS Image Sensor with Reference-Shared In-Pixel Differential Amplifier at 8.3Mpixel 35fps
  M. Sato, Y. Yorikado, Y. Matsumura, H. Naganuma, E. Kato, T. Toyofuku, A. Kato, Y. Oike,
  Sony Semiconductor Solutions, Atsugi, Japan
• A 0.8V Multimode Vision Sensor for Motion and Saliency Detection with Ping-Pong PWM Pixel
  T-H. Hsu, Y-K. Chen, J-S. Wu, W-C. Ting, C-T. Wang, C-F. Yeh, S-H. Sie, Y-R. Chen, R-S. Liu, C-C. Lo, K-T. Tang, M-F. Chang, C-C. Hsieh,
  National Tsing Hua University, Hsinchu, Taiwan
• A 1280×720 Back-Illuminated Stacked Temporal Contrast Event-Based Vision Sensors with 4.86μm Pixels, 1.066GEPS Readout, Programmable Event-Rate Controller and Compressive Data-Formatting Pipeline
  T. Finateu, A. Niwa, D. Matolin, K. Tsuchimoto, A. Mascheroni, E. Reynaud, P. Mostafalu, F. Brady, L. Chotard, F. LeGoff, H. Takahashi, H. Wakabayashi, Y. Oike, C. Posch,
  PROPHESEE, Paris, France,
  Sony Semiconductor Solutions, Atsugi, Japan,
  Sony Electronics, Rochester, NY

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Samsung publishes a half-year report listing its recent achievements:

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MarketWatch: Quanergy CEO says that Elon Musk's criticism of Lidar 'makes no sense':



Innoviz decided to put its non-automotive qualified InnovizPro LiDAR into production. The automotive qualified version named InnovizOne is expected to start sampling next year.

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PRNewswire: Smartsens presentation at China Public Security Expo (CPSE 2019) held in Shenzhen, China at the end of October has a part about its future products:

• CMOS Sensors with LED Flicker Suppression (LFS) enabled by SmartSens QCell technology for ADAS and Autonomous Vehicles (AV) applications
• Automotive HDR sensors with SmartSens PixGain HDR technology – are capable of capturing fast moving objects in low and high lighted environment without motion blur
• A large optical format 1080P super-starlight sensor, low light night vision video capture is effortless in security surveillance applications, and industrial cameras
• SmartClarity H-series BSI products have improved IQ performance even under extreme hot temperatures.

Smartsens also releases 4 new image sensors featuring "First-in-Industry DSI Imaging Technology known as SmartPixel-2:" SC2320, SC4335, SC5335, and SC8220 with resolutions in range of 2MP to 8MP.

"When compared to other BSI technology, SC4335 performed with 42% higher sensitivity and 16% better dynamic range. Additionally, with an improved signal-to-noise ratio that makes them ideal for Artificial Intelligence applications, DSI sensors have the potential to dominate in the mid-market sector."

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Image Sensors World        Go to the original article...

Smartsens presentation at China Public Security Expo (CPSE 2019) held in Shenzhen, China at the end of October has a part about its future products:

• CMOS Sensors with LED Flicker Suppression (LFS) enabled by SmartSens QCell technology for ADAS and Autonomous Vehicles (AV) applications
• Automotive HDR sensors with SmartSens PixGain HDR technology – are capable of capturing fast moving objects in low and high lighted environment without motion blur
• A large optical format 1080P super-starlight sensor, low light night vision video capture is effortless in security surveillance applications, and industrial cameras
• SmartClarity H-series BSI products have improved IQ performance even under extreme hot temperatures.

Smartsens also releases 4 new image sensors featuring "First-in-Industry DSI Imaging Technology known as SmartPixel-2:" SC2320, SC4335, SC5335, and SC8220 with resolutions in range of 2MP to 8MP.

"When compared to other BSI technology, SC4335 performed with 42% higher sensitivity and 16% better dynamic range. Additionally, with an improved signal-to-noise ratio that makes them ideal for Artificial Intelligence applications, DSI sensors have the potential to dominate in the mid-market sector."

Go to the original article...