Hynix Aims to Capture Larger Chunk of CIS Market

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BusinessKorea: "I am confident that CMOS image sensors (CISs) will be a pillar of SK Hynix's growth along with DRAMs and NAND flashes," said Song Chang-rok, VP of SK Hynix's CIS business, in an interview with SK Hynix Newsroom on Oct. 12. "The next goal is to join the leaders’ group."

Although SK Hynix is a latecomer, it aims to strengthen its R&D capabilities for image sensors and improve productivity early to join the leaders of the high-pixel count sensor market.

Currently, Sony and Samsung Electronics are the leaders of the CIS market, with a combined market share of about 80%. SK Hynix, OmniVision, and GalaxyCore are competing for the remaining 20%.

Technology gaps become meaningless when the market undergoes big changes,” Song said. “Competition factors will change from process technologies such as miniaturization to peripheral technologies such as information sensors and intelligence sensors.

The CIS market is expected to grow 7.3% annually from US$19.9 billion in 2021 to US$26.3 billion in 2025, Gartner said in June. During the same period, the overall semiconductor market is expected to grow by 4.0% annually and the memory market - by 4.1%.

Few more quotes from Song Chang-rok's article (in Google translation):

"As the memory semiconductor market grows and technology advances, new fabs are being built and new processes and equipment are introduced. Idle assets and prior art generated during this process can be applied to the CIS business. CIS requires a lower level of refinement compared to memory, but the equipment and processes required for production are similar.

In addition, the CIS business is important in that it serves as a bridgehead for SK hynix to expand into the non-memory market. We will respond effectively to market growth and create a successful story.

As a latecomer, we have experienced some trial and error, but we have continued to grow steadily. At first, customers doubted the possibility that SK hynix could do CIS business, but now it is recognized as a major supplier in the low-pixel area of ​​13MP (megapixel) or less. In order to expand into the 32MP or higher high-pixel market that can create high added value, we are strengthening our R&D capabilities and striving to secure productivity.

Above all, SK hynix has a great advantage in securing 'Pixel Shrink' technology, which determines the reliability of CIS. Cell miniaturization know-how has been accumulated for a long time in the DRAM field, and proven equipment is deployed on the production line. When our competitors go through multiple stages, we can find shortcuts. We will strengthen our competitiveness by making good use of these advantages.

Analog driven CIS cannot continue to reduce pixel size like DRAM. When the limit of miniaturization is reached, overcoming it requires new innovations in the surrounding technology rather than the process technology. In the future, CIS will evolve into an information sensor or intelligence sensor, not just a visual sensor. Accordingly, the paradigm of competition also changes.

The CIS business has different characteristics from the memory semiconductor business, such as a multi-variety small-volume production system and a complex industrial ecosystem, but there have been some inefficiencies by using the existing memory semiconductor process or system as it is. We focused on improving the speed of decision-making and improving work efficiency by improving it for the CIS business."

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Hynix Aims to Capture a Larger Chunk of CIS Market

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BusinessKorea: "I am confident that CMOS image sensors (CISs) will be a pillar of SK Hynix's growth along with DRAMs and NAND flashes," said Song Chang-rok, VP of SK Hynix's CIS business, in an interview with SK Hynix Newsroom on Oct. 12. "The next goal is to join the leaders’ group."

Although SK Hynix is a latecomer, it aims to strengthen its R&D capabilities for image sensors and improve productivity early to join the leaders of the high-pixel count sensor market.

Currently, Sony and Samsung Electronics are the leaders of the CIS market, with a combined market share of about 80%. SK Hynix, OmniVision, and GalaxyCore are competing for the remaining 20%.

Technology gaps become meaningless when the market undergoes big changes,” Song said. “Competition factors will change from process technologies such as miniaturization to peripheral technologies such as information sensors and intelligence sensors.

The CIS market is expected to grow 7.3% annually from US$19.9 billion in 2021 to US$26.3 billion in 2025, Gartner said in June. During the same period, the overall semiconductor market is expected to grow by 4.0% annually and the memory market - by 4.1%.

Few more quotes from Song Chang-rok's article (in Google translation):

"As the memory semiconductor market grows and technology advances, new fabs are being built and new processes and equipment are introduced. Idle assets and prior art generated during this process can be applied to the CIS business. CIS requires a lower level of refinement compared to memory, but the equipment and processes required for production are similar.

In addition, the CIS business is important in that it serves as a bridgehead for SK hynix to expand into the non-memory market. We will respond effectively to market growth and create a successful story.

As a latecomer, we have experienced some trial and error, but we have continued to grow steadily. At first, customers doubted the possibility that SK hynix could do CIS business, but now it is recognized as a major supplier in the low-pixel area of ​​13MP (megapixel) or less. In order to expand into the 32MP or higher high-pixel market that can create high added value, we are strengthening our R&D capabilities and striving to secure productivity.

Above all, SK hynix has a great advantage in securing 'Pixel Shrink' technology, which determines the reliability of CIS. Cell miniaturization know-how has been accumulated for a long time in the DRAM field, and proven equipment is deployed on the production line. When our competitors go through multiple stages, we can find shortcuts. We will strengthen our competitiveness by making good use of these advantages.

Analog driven CIS cannot continue to reduce pixel size like DRAM. When the limit of miniaturization is reached, overcoming it requires new innovations in the surrounding technology rather than the process technology. In the future, CIS will evolve into an information sensor or intelligence sensor, not just a visual sensor. Accordingly, the paradigm of competition also changes.

The CIS business has different characteristics from the memory semiconductor business, such as a multi-variety small-volume production system and a complex industrial ecosystem, but there have been some inefficiencies by using the existing memory semiconductor process or system as it is. We focused on improving the speed of decision-making and improving work efficiency by improving it for the CIS business."

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Yole on Camera Module Market

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Yole Developpement reports on CCM market:

"After the outbreak of the pandemic in 2020, society and enterprise including Compact Camera Module (CCM) industry were temporarily suspended, but swift action was taken, and CCM industry quickly recovered.

The multi-camera approach in mobile not only increases photography functions (such as macro, telephoto etc.) but also greatly improves the photographic effects. As a result, the multiple-camera strategy is applicable in most of smartphones, resulting in an increase in the number of mobile CCMs to increase from 4.9B to 5.4B units from 2019 to 2020, a Yearover- Year (YoY) growth of 10.4%.

From imaging to sensing, the 3D camera could be in the front or rear (the front also includes optical fingerprint recognition), it will positively affect the developmental direction of the multicamera approach in mobile phones.

The automotive market started with rear imaging and has now developed to 360 surround-view, going from one camera to at least four even more. The autonomous driving is also increasing the need for more cameras. In addition, cars also need in-cabin cameras, as well as cameras to replace rearview mirrors. They are the next wave of CCM market.

In the consumer sector, products are becoming intelligent – connected to everything – allowing vision to play a more significant role in applications such as robots and home surveillance cameras. These will need more cameras.

Yole Développement expects the revenue of the global camera module to expand from $34B in 2020 to $59B in 2026, at a 9.8% CAGR."

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Assorted Videos: Cordy, Teledyne e2v, SCD, Emberion, Isorg, FLIR

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 Zhuhai Cordy Electronic Technology publishes a video of its image sensor testing machine:

Teledyne e2v publishes a promotional video about its Emerald 36M and 67M sensors:


SCD publishes a video from its 5MP MSIR imager, said to be world's highest resolution MWIR sensor:


QinetiQ publishes an interview with Emberion and a short Q&A session:

Isorg posts a demo of its large area fingerprint sensor integrated into a smartphone display:


Autosens publishes a short interview with Teledyne FLIR on automotive use case for thermal cameras:

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MIPI A-PHY Unveils PAM16 in its Roadamap

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MIPI Alliance announces a completion of the development of the next version of the MIPI A-PHY SerDes interface, which will double the maximum available downlink data rate from 16 Gbps to 32 Gbps to support evolving requirements of automotive displays and sensors (cameras, lidars and radars). The enhanced version, v1.1, also will double the data rate available for uplink control traffic and introduce options for implementing A-PHY’s lower speed gears over lower-cost legacy cables, providing additional flexibility for manufacturers to implement A-PHY.

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BAE Systems Unveils Low-Light Image Sensor Enabling Night Vision in Overcast Starlight Conditions

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BusinessWire: BAE Systems unveils its BSI “Hawkeye” HWK1411 ultra low-light image sensor, said to enable market-leading night vision capabilities with reduced size, weight, and power. The 1.6MP sensor is designed for battery-powered soldier systems, unmanned platforms, and targeting and surveillance applications.

The sensor achieving Overcast Starlight Conditions at 120 fps which is said to be really a groundbreaking results for a CMOS sensor.

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ST to Present its Quantum Dot SWIR Sensor at IEDM 2021

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IEDM Press Kit shows few figures from STMicro presentation of its quantum dot NIR/SWIR imager paper:

Paper #23.4, “1.62µm Global Shutter Quantum Dot Image Sensor Optimized for Near and Shortwave Infrared,” J.S. Steckel et al, STMicroelectronics

Record Quantum Efficiency for NIR/SWIR Sensors: STMicroelectronics researchers will report a 1.62µm pixel-pitch global shutter sensor for imaging in the near-infrared (NIR) and shortwave infrared (SWIR) regions of the light spectrum. It demonstrated record optical performance: an unprecedented quantum efficiency of >50% and a shutter efficiency of >99.94%. The breakthrough was made possible by use of a novel colloidal PbS quantum dot thin-film technology, and the devices were fabricated on a 300mm manufacturing toolset.

  • The top photo is of a qualification wafer showing (a) elementary quantum film (QF) test structures; (b) pixel matrix test chips; and (c) full image sensor products.
  • Going from left to right in the middle set of images/drawings are a QF photodiode array integrated on top of a CMOS readout IC; the QF photodiode cross-section; and a graphical description of the device stack.
  • At the bottom is an outdoor image taken with the 940nm NIR QF sensor (left) and with a high-end smartphone camera (right). The NIR image shows a significant difference in contrast, and the ability to clearly identify the black electrical wires hidden in the tree leaves, vs. the visible image.

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Sheba Microsystems Introduces a Pixel-shift Technology for Smartphones

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BusinessWire: Sheba Microsystems releases ShebaSR, said to be the world’s first miniature actuator that can improve the resolution of smartphone camera images by up to 9 times.

Image sensors for mobile phones are much smaller than professional cameras. The actuator needs to reliably shift the image sensor by sub-micron increments. The electromagnetic actuators that can work for DSLR and mirrorless cameras are too bulky to fit in the tight spaces of mobile devices and they lack the speed and accuracy to provide more than 4x the image resolution. Therefore, integrating pixel-shift technology remained difficult – until now.

By leveraging its expertise in the MEMS actuation field, Sheba today is bringing a new DSLR camera feature, long desired by smartphone camera users, into the smartphone world. ShebaSR™ can precisely shift the image sensor by a distance equal to 1/3 that of a pixel, with a repeatability of <20 nm, and an extremely high-speed response; making it not only match but surpass the most advanced DSLR pixel shifting capability using only simple super resolution algorithms.” said Faez Ba-Tis, CEO of Sheba Microsystems. “This technology is ready for market entry as the actuator’s fabrication process has been already scaled up for mass production at a prominent MEMS foundry, the MEMS driver is readily available in the market, and it has been qualified for the standard reliability tests of smartphones.

ShebaSR is also remarkably rugged. The product can be subjected to shocks, drops, tumbles, as well as temperature and humidity fluctuations without deterioration in performance.

Sheba publishes a demo of its technology:


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Samsung 50MP Sensor Article

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EE Journal publishes an article based on Samsung presentation at HotChips 33 conference in August this year "Samsung’s 50-Mpixel GN2 Image Sensor Sports Pro Camera Features." Few pictures from the article:

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Pixart Promotes its Low Power Sensors

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Pixart publishes a promotional EETimes article "AI & Battery-Powered Solution Saver: Pixart Provides the World’s Lowest-Powered Image Sensors, Available In Both Global Shutter and Rolling Shutter Technologies."

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Sony Introduces Cloud Service to Process Data from its AI-Enabled Sensors

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In a push to build a recurring revenue model, Sony Semiconductor Solutions announces that its AITRIOS edge AI sensing platform will launch in Japan, the U.S. and Europe starting from late 2021.

In May 2020, Sony announced an intelligent vision sensor, the IMX500, the world’s first image sensors to be equipped with AI processing functionality. Adding to the IMX500 intelligent vision sensor, AITRIOS offers partners a variety of features that help them craft solutions. Platform partners can include developers building AI that runs on cameras, developers building applications for AI-driven sensing applications, camera manufacturers/module integrators who produce AI cameras, and system integrators who build systems that integrate these AI cameras and sensing applications.

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Artilux Cooperates with Conti on Ge-on-Si SWIR LiDAR, Announces 12-inch Wafer Production Readiness

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Artilux announces that "through collaborations with industry-leading customer such as Continental, Artilux will play a key role in delivering affordable ADAS and self-driving systems that operate at SWIR spectrum to provide safe sensing, imaging, and ranging applications from neighborhoods to highways."

The company also announces "the world’s first single-chip CMOS-based GeSi imager for a compact dual-mode (2D/3D) SWIR (Shortwave Infrared) sensing & imaging system. The high-resolution GeSi imager is fabricated at TSMC 12-inch CMOS production line, and is ready for commercialization at scale, enabling an ever-growing ecosystem to mark the beginning of SWIR sensing and imaging for consumer markets.

Artilux’s GeSi imager meets the expectation from stakeholders in the ecosystem for achieving compact form-factor, low power consumption, safety (lead-free), cost-competitiveness and mass production-ready."


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IDTechEx Compares SWIR Imaging Technologies

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PRNewswire: IDTechEx publishes a comparison of SWIR technologies:

"Arguably the most compelling attribute of imaging in the SWIR region is the reduced optical scattering of longer wavelengths of light. Reduced scattering means that SWIR cameras on vehicles and drones can see through fog and dust clouds, greatly improving visibility and hence safety.

Another benefit of SWIR imaging is distinguishing visually similar materials, which may have similar absorption (and thus reflection) spectra in the visible region but significant differences in the SWIR region. This ability is highly valuable for applications such as quality control in industrial processes, where it enables unwanted items such as rocks and metals to be spotted in food production for example, and sorting recycling.

Other benefits include thermal imaging for items with temperatures between 200 and 500 C, and the ability to see through materials that are opaque to visible light but transparent to SWIR. Silicon is a great example of this, with SWIR imaging used to check the quality of wafer attachment.

...at present short-wave infra-red (SWIR, 1000-2000 nm) imaging is dominated by expensive InGaAs (Indium Gallium Arsenide) sensors that can absorb light up to around 1800 nm. These can cost upwards of $10,000 due to the expense of producing the InGaAs layer via vapor deposition, low manufacturing yields, and limited pixel density that increases material consumption for a given resolution relative to standard silicon photodetectors.

The combination of commercially desirable attributes and an expensive incumbent technology creates a clear opportunity for a disruptive, low-cost alternative. As such, multiple competing approaches for SWIR imaging are being developed."

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Masterclass on New Developments In CMOS Image Sensors

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Albert Theuwissen gives a "Masterclass on Developments In CMOS Image Sensors Since IS Europe 2021 Online" on October 14, 2021. 

The world of CMOS image sensors is changing at a pace that we never have seen before.  New applications, new technologies, new features are constantly added to the large portfolio of CMOS devices that are out in the market.  In this way the performance as well as the possibilities of the devices is constantly improved.

During Image Sensors Europe 2019 and 2020 conference, a masterclass was organised around the recent developments in the CIS world and due to the popular demand of them, Albert Theuwissen and Smithers will re-run the 3 hour online masterclass to review the year and report on the latest developments.

Several subjects will be discussed : small pixels, new colour filters, new ToF image sensors, new stacked devices, global shutter devices, high-dynamic range techniques, etc.  Some topics that are not yet announced at the moment of writing this abstract will be included as well, because one can be sure: further developments of the CIS technology will not stop on a short notice!  Still exiting times are ahead for the imaging engineers and the imaging community.

A lookback of the developments over the last 12 months will be given, including critical comments on the published papers and data-sheets.  In many cases the information made available to the general public contains a lot of rubbish and data that makes no sense.  The speaker will analyse the figures and numbers published and will compare them to data available from other companies.  A real, unbiased benchmark of performance data will be given in the workshop.

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Old ToF Presentations

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IEEE Sensors keeps publishing old videos from its archives. Here is a recent bunch of such publications:

"Introduction to Time-of-Flight Imaging" by Edoardo Charbon from Technische Universiteit Delft, Netherlands

"In this paper, the most important architectures used in time-of-flight (TOF) imaging will be described, starting with global shutter image sensors, ultra-fast CCDs with 100ns frames, on to TOF-specific architectures, such as direct, or pulse-based TOF and indirect, or phase-based TOF, implemented both in CCD and CMOS processes with optimized optical stacks."

"A Fast Global Shutter Image Sensor Based on the VOD Mechanism" by Erez Tadmor, Idan Bakish, Shlomo Felzenshtein, Eli Larry, Giora Yahav, David Cohen from Microsoft

"In this paper the physical principles that allow a fast (ns scale) global shutter operation using the vertical overflow drain mechanism are explained and characterized. Several new measurement methodologies are developed in order to quantify the fast shutter temporal and spatial behaviour. Measurement results that highlight different physical properties of the shutter mechanism are surveyed, and the results are studied and analyzed. Process and device simulations of a pinned photodiode with a VOD mechanism are presented in order to give insights regarding the physical origins of the measured phenomena."

"Resolving Multipath Interference in Kinect: an Inverse Problem Approach" by Ayush Bhandari, Micha Feigin, Shahram Izadi, Christoph Rhemann, Mirko Schmidt, Ramesh Raskar from MIT and Microsoft

"Multipath interference (MPI) is one of the major sources of both depth and amplitude measurement errors in Time"of"Flight (ToF) cameras. This problem has received a lot of attention in the recent past. In this work, we discuss the MPI problem within the framework of inverse problems based on the Fredholm integral and multi"frequency measurements. As compared to previous approaches that consider up to two interfering paths, our model considers the general case of K"interfering paths. In the theoretical setting, we show that for the case of K"interfering paths of light, 2K + 1 frequency measurements suffice to compute the depth and amplitude images corresponding to each of the K optical paths. Our algorithm is practical, by providing a deterministic solution. Also, for the first time, we demonstrate the effectivity of our model on an off-the-shelf Microsoft Kinect. Theoretical findings and practical demonstration warrants future research and further experimentation."


"Depth-Range Extension with Folding Technique for SPAD-Based TOF LIDAR Systems" by Daniele Perenzoni, Leonardo Gasparini, Nicola Massari, David Stoppa from Fondazione Bruno Kessler, Italy

"Direct Time-of-Flight cameras can be implemented combining Single-Photon Avalanche Diodes (SPAD) with Time-to-Digital Converters (TDCs). Such a technology exhibits an intrinsic distance range limitation due to the TDC range, which is fixed by the TDC resolution and number of bits. Up to now it was not possible to extend this range without redesigning the TDC. In this work we propose a method to overcome this limitation thanks to a folding measuring technique. In our implementation the TDC is based on a ring-oscillator; the TDC starts when a photon is detected and stops when an external Stop signal is provided. As the number of bits is limited, the TDC restarts from 0 after reaching the final value (folding). In this paper, we show that it is possible to arbitrary extend the maximum detectable distance through repeated measurements by modifying the timing of the “stop” signal in multiples of the TDC’s maximum range."


"A Low-Power Pixel-Level Circuit for High Dynamic Range Time-of-Flight Camera" by Nicola Massari, David Stoppa, Lucio Pancheri from Fondazione Bruno Kessler, and Università degli Studi di Trento, Italy.

"Design of a low-power pixel-level circuit for extending the dynamic range of a ToF camera."

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Samsung Introduces 17nm FinFET Process for Stacked CIS, Aims to 600MP Resolution, 8K 240fps Video, 120dB HDR

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Samsung introduces 17LPV process at its Foundry Forum 2021.  It's a combination of 28nm BEOL and FinFET. One of the main applications of the new process is logic dies in high resolution, high-speed, HDR CIS:

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ON Semi Unveils 8.3MP Sensor with 140dB eHDR

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BusinessWire: Onsemi announces a 1/1.7 inch 8.3 MP CMOS sensor with rolling shutter and embedded HDR (eHDR) technology. The AR0821CS delivers 4K video with 8.3 MP resolution at 60 fps while it is said to consume very low power. The sensor includes a 2.1 µm DR−Pix BSI pixel with high WE as well as on-chip HDR (eHDR) technology that is said to deliver best-in-class dynamic range in excess of 140 dB.

The AR0821CS is supported by the AP1302 co-processor and by ISP and SoC devices from onsemi technology partners. The AR0821CS is in production now.

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CIA Investment Arm Explores Prophesee Event-Driven Camera

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In-Q-Tel, CIA investment arm, publishes an article "Exploring and Experimenting with Event Cameras" describing its tests of Prophesee event-driven camera:


Apparently, these comparison tests precede an investment into the company.

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EMVA 1288 Release 4 Explanations

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EMVA publishes a series of 4 nice webinars explaining release 4 of the standard, presented by Bendt Jahne from Heidelberg University (parts 1, 2, 3, 4):

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Holes vs Pyramids

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W&W Sens Device together with Universities of California at Davis and Santa Cruz publishes Arxiv.org paper "Optimization of CMOS image sensors with single photon-trapping hole per pixel for enhanced sensitivity in near-infrared" by E. Ponizovskaya Devine, Ahasan Ahamed, Ahmed S. Mayet, Soroush Ghandiparsi, Cesar Bartolo-Perez, Lisa McPhillips, Aly F. Elrefaie, Toshishige Yamada, Shih-Yuan Wang, and M Saif Islam.

"The optimization of silicon photodiode-based CMOS sensors with backside-illumination for 300-1000 nm wavelength range was studied. It was demonstrated that a single hole on a photodiode increases the optical efficiency of the pixel in near-infrared wavelengths. A hole with optimal dimensions enhanced optical absorption by 60% for a 3 μm thick Si photodiode, which is 4 orders better than that for comparable flat photodiodes. We have shown that there is an optimal size and depth of the hole that exhibits maximal absorption in blue, green, red, and infrared. Crosstalk was successfully reduced by employing thin trenches between pixels of 1.12 μm^2 in size."

Although the labels on the following figures seem to be off, the general conclusion is clear: NIR sensitivity is a little bit better with holes, but visible is significantly worse:

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ST to Start Quantum Dot Image Sensor Production

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SeekingAlpha article "Quantum Dots - All The Colours Of The Rainbow" by Edison Investment Research tells about ST QD sensor plans. The article is also published in a pdf form.

"STMicroelectronics ready to commercialise QD photodetector platform technology

In May 2021, ST presented a paper at the Society for Information Display’s annual symposium. This announced that the company was ready to commercialise its QD photodetector platform technology and intended to have 940nm engineering samples ready for release to early adopters during calendar H221 and SWIR (<1,400nm) samples ready during calendar 2022. The paper noted that the technology held great promise for enabling lower cost (100–1,000 times lower), high-performance, high-resolution, large spectral response image sensors, which would potentially drive large SWIR imaging growth. It identified initial opportunities in mobile devices, miniature spectrometers and hyperspectral imaging, machine vision and advanced driver assistance, noting that the variant currently at R&D scale was likely to surpass the required performance specifications including sensor speed for time-of-flight applications in future.

We have previously inferred elsewhere that ST is deploying QDs from Nanoco for this application. If successful, this programme could lead to production scale-up and eventual volume production in calendar 2023 at Nanoco’s proven production facility in Runcorn. Nanoco is also working with a ‘very significant’ Asian chemical company on the development of QDs or infra-red sensing applications. The Asian customer intends to incorporate Nanoco’s nanomaterials in its own materials, which it will sell globally to companies making electronic devices (i.e., companies at a similar level in the supply chain to ST). Volume production for the Asian customer is likely to commence one year to 18 months after any potential volume ramp-up for ST."

Investing.com article is based on an earlier version of Edison report giving more details about ST-Nanoco cooperation history:

"Nanoco and ST have been working together for around three years. Originally this was as part of a supply chain for a major US customer, with Nanoco manufacturing nanomaterials that ST used to improve the sensitivity of its silicon infrared sensors. In June 2019 the US customer advised Nanoco that the joint programme would not be extended beyond December 2019 when the contract covering a range of stress tests and commissioning services at the Runcorn facility concluded. This decision was for reasons wholly unconnected to the performance of Nanoco’s materials and service delivery. The nanomaterials production facility in Runcorn had been successfully commissioned, with Nanoco delivering the final milestones for the US customer during FY20 and earning the contracted milestone payments in full.

With the US customer having withdrawn from the scene and the exclusivity agreement with it having lapsed, ST is able to offer the enhanced, proven, near infrared (NIR) sensors developed for the US customer across its extensive, global customer base. In May 2020 ST signed a framework agreement with Nanoco covering both development work and commercial supply of nanomaterials for use in multiple infrared sensing applications over a five-year period. The agreement covers the supply of small-scale volumes of nanomaterials for NIR sensors. It also covered a development project, which initially extended from April to December 2020, on a new generation of nanomaterials for potential use in other infrared sensing applications, which we infer from a recent paper given by ST (see below) are in the short-wave infrared (SWIR) range. This development activity was not impaired by the coronavirus pandemic. During H1/21 Nanoco successfully delivered all of the technical and commercial milestones on the first phase of this project, which contributed £0.8m of the total £1.0m revenues for the period. In May 2021 Nanoco announced that it was working on the second phase, which is the optimisation of the new materials. This phase is scheduled to complete in Q1/22. If successful, this phase could lead to production scale-up and eventual volume production in calendar 2023.

The agreement also commits ST to taking a specified minimum volume of nanomaterials from Nanoco if the enhanced sensors gain market traction and commercial volumes are required. These materials would be produced at the existing facility dedicated to sensing applications in Runcorn."

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Quantum Dot/Graphene Detectors Reviews

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IOP NanoExpress publishes Kansas University paper "Quantum dots/graphene nanohybrids photodetectors: progress and perspective" by Judy Wu and Maogang Gong.

"Semiconductor quantum dots/graphene heterostructure nanohybrids combine the advantages of the enhanced light–matter interaction and spectral tunability of quantum dots (QDs) and high charge mobility in graphene as a charge transport pathway, providing a unique platform for exploration of photodetectors with high performance. In particular, the QDs/graphene nanohybrids allow resolution to the critical issue of charge transport in QDs-only photodetectors stemming from the low charge mobility associated with both QD surface defect states and inter-QD junctions. Furthermore, the achieved capability in industrial-scale fabrication of graphene and colloidal QDs has motivated efforts in research of QDs/graphene nanohybrids focal plane arrays that are expected to be not only high performance and low cost, but also light-weight, flexible and wearable. This paper aims to highlight recent progress made in the research and development of QDs/graphene nanohybrid photodetectors and discuss the challenges remained towards their commercial applications."


Wiley Advanced Science publishes a paper "Integration of Colloidal Quantum Dots with Photonic Structures for Optoelectronic and Optical Devices" by Mengyu Chen, Lihua Lu, Hui Yu, Cheng Li, and Ni Zhao from Xiamen University, Institute of Xiamen, and Chinese University of Hong Kong.

"In this review, the recent advances in this research area are summarized. In particular, the use of four typical photonic structures, namely, diffraction gratings, resonance cavities, plasmonic structures, and photonic crystals, in modulating the light absorption (e.g., for solar cells and photodetectors) or light emission (e.g., for color converters, lasers, and light emitting diodes) properties of QD-based devices is discussed. A brief overview of QD-based passive devices for on-chip photonic circuit integration is also presented to provide a holistic view on future opportunities for QD/photonic structure-integrated optoelectronic systems."

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One-pixel Camera from HDR Inventor

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Steve Mann publishes Instructables article "One-pixel Camera for Teaching and Research on Comparametric Equations and HDR." It starts from a claim of a multi-frame HDR invention in 1996:

"Back in the 1980s and early 1990s I invented something called HDR (High Dynamic Range) imaging that is now widely used in smartphones and cameras and augmented reality vision systems, etc.. My general philosophy was to regard the camera as an array of light meters. The idea is to turn a camera into a scientific measuring instrument."

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GeSn/Ge/Si Detector to Extend SWIR Sensor Sensitivity to 2.45um

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Photonics: Researchers at the Forschungszentrum Jülich (Jülich Research Center) and the Politecnico di Milano (Polytechnic University of Milan) have developed an IR detector that provides a bias-switchable spectral response in two distinct IR bands. When the bias voltage for the detector is reversed, the device switches from the NIR to the SWIR band. The dual-band photodetector is Si-wafer based and is said to be suitable for integration into cameras and smartphones.

The paper "CMOS-Compatible Bias-Tunable Dual-Band Detector Based on GeSn/Ge/Si Coupled Photodiodes" by Enrico Talamas Simola, Vivien Kiyek, Andrea Ballabio, Viktoria Schlykow, Jacopo Frigerio, Carlo Zucchetti, Andrea De Iacovo, Lorenzo Colace, Yuji Yamamoto, Giovanni Capellini, Detlev Grützmacher, Dan Buca, and Giovanni Isella is published in ACS Photonics.

"Here, we present a two-terminal dual-band detector, which provides a bias-switchable spectral response in two distinct IR bands. The device is obtained from a vertical GeSn/Ge/Si stack, forming a double junction n-i-p-i-n structure, epitaxially grown on a Si wafer. The photoresponse can be switched by inverting the bias polarity between the near and the short-wave IR bands, with specific detectivities of 1.9 × 1010 and 4.0 × 109 cm·(Hz)1/2/W, respectively. The possibility of detecting two spectral bands with the same pixel opens up interesting applications in the field of IR imaging and material recognition, as shown in a solvent detection test. The continuous voltage tuning, combined with the nonlinear photoresponse of the detector, enables a novel approach to spectral analysis, demonstrated by identifying the wavelength of a monochromatic beam."

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KT Imaging Files Patent Lawsuits against Apple, Microsoft, Google, Samsung, etc.

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KT Imaging patent holding company believes that a number of companies infringed on its image sensor packaging patents. So, KT Imaging files the lawsuits against Apple, Microsoft, Google, Dell, Samsung, HP, AsusTek, Acer, etc.

AppleInsider publishes the case against Apple is published on Scribd. The patents in the case are 7,196,322, 7,511,261, 7,598,580, 8,004,602, and 8,314,481, filed for between 2004 and 2008 by Kingpak (Kingpak has been acquired by Tong Hsing two years ago.)

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Gpixel Releases World’s Highest Resolution Global Shutter CMOS Sensor

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Gpixel expands the GMAX product family of global shutter image sensors with the 152 MP GMAX32152, the highest resolution global shutter CMOS sensor commercially available in the market.

This latest GMAX sensor incorporates a 3.2 µm charge domain global shutter pixel in a 16556 (H) x 9200 (V) array for an imaging area of 53 mm x 29.4 mm (60.6 mm diagonal). The 1.8:1 wide aspect ratio optimizes the inspection of flat panel displays of similar format and increases the efficiency of large field of view aerial mapping applications.

GMAX32152 shares a common pixel and read-out architecture with the 103 MP GMAX32103, achieving the same full well capacity of 9.4 ke- and a read noise of 4 e- for a dynamic range of 67.6 dB.

The read out of image data is accomplished using 38 pairs of sub-LVDS channels each operating at 960 MHz delivering a full resolution frame rate of 16 fps at 12bit output and total aggregate data rate of 36.48 Gbps.

This sensor is provided in monochrome and RGB Bayer color options. Monochrome and RGB color engineering samples can be ordered today for delivery in October 2021, production release is expected by mid 2022.

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Sony Unveils UV-Optimized Image Sensor

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Sony announces the commercialization of the IMX487, a 2/3-type CMOS image sensor for industrial equipment, which is optimized for UV wavelength and comes with global shutter functionality and the industry’s highest (among UV sensors) pixel count of 8.13MP.

The sensor captures UV light with high efficiency made possible by the industry’s smallest (among UV sensors) 2.74 µm pixel size. It utilizes Sony’s Pregius S global shutter technology, which employs a unique back-illuminated pixel structure on a stacked CMOS image sensor,

Sony expects the new sensor to be useful in a variety of applications, including semiconductor pattern defect inspection in the existing UV camera market, thereby contributing to improving productivity in manufacturing processes and helping to solve industrial issues.

In general, UV cameras enable sorting of materials that would be difficult in visible light, as well as checking for minute scratches and defects on the surface of objects. They have conventionally been used in semiconductor pattern defect inspection; however, to expand the scope of application in the future, demand has continued to grow for an image sensor that not only provides sensitivity in the UV wavelength, but also delivers high resolution, low noise, and high-speed performance.

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Pixel with Nearly Unity-Gain SF

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IEEE Sensors publishes a video presentation of Xiaoliang Ge and Albert Theuwissen (Delft University) paper "A CMOS Image Sensor with Nearly Unity-Gain Source Follower and Optimized Column Amplifier."

"This paper presents a CMOS image sensor with in-pixel nearly unity-gain pMOS transistor based source followers and optimized column-parallel amplifiers. The prototype sensor has been fabricated in a 0.18 µm CMOS process. By eliminating the body effect of the source follower transistor, the voltage gain for the pixel-level readout circuitry approaches unity. The use of a single-ended common-source cascode amplifier with ground rail regulation improves the PSRR of the column-parallel analog front-end circuitry and further the noise performance. The prototype sensor with proposed readout architecture reaches a 1.1e- input-referred temporal noise with a column-level ×16 analog gain."

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Syntiant Partners with Pixart on Low Power Always-On Applications

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GlobeNewswire: Competing with Himax WiseEye always-on IoT platform, Pixart partners with Syntyant neural processing startup to come up with a joint low power vision platform.

Syntiant introduces its Syntiant® NDP200 Neural Decision Processor (NDP), the company’s first chip designed for vision processing that can provide highly accurate inference at under 1mW.

The NDP200 can run multiple applications simultaneously with minimal power consumption, including AI vision features such as person detection, object classification, motion tracking and occupancy monitoring.

Our NDP200 brings extraordinary inference capabilities to a wide variety of always-on image and sensor applications,” said Kurt Busch, CEO of Syntiant. “Our Core 2 architecture minimizes data movement by coupling memory and MAC functions that generally provides 100x improvement in efficiency and performance. As an example, an application that lasts three and a half days on a battery-powered device using an Arm A53 processor would last one year running on the NDP200.

The combination of Syntiant’s NDP200 and PixArt's ultra-low-power image sensor offers the ability to develop highly accurate person and object detection systems that consume very little power with almost no latency,” said Sen Huang, CEO of PixArt Imaging. “These features are extremely critical to the growing need for imaging sensor applications found in battery-operated IoT devices, such as video doorbells and security cameras.”

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IntoPIX Announces IP Cores for 10x Raw Image Data Compression

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BusinessWire: IntoPIX announces the extension of its range of TICO RAW IP-cores supporting additional pixel per clock architectures to target more devices and more sensor types.

Integrated on ASIC or in small FPGAs, these IP-cores cover the most popular CFA Bayer patterns, sensor bit-depths from 10 up to 16 bits and resolutions from 1MP up to 100MP.

TICO-RAW is the new RAW. It preserves access to the control over white balance, exposure and color grading with the world's best efficiency. “The continued use of regular RAW files means that the ultimate image quality can’t be maintained without creating monster-size files or using too much bandwidth,” explains Jean-Baptiste Lorent, Marketing and Sales Director at intoPIX. With 10 times less bandwidth required and 10 times less storage needed compared with those of regular RAW, TICO-RAW offers a high speed and low complexity.

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