"Photon inhibition" to reduce SPAD camera power consumption

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In a paper titled "Photon Inhibition for Energy-Efficient Single-Photon Imaging" presented at the European Conference on Computer Vision (ECCV) 2024 Lucas Koerner et al. write:

Single-photon cameras (SPCs) are emerging as sensors of choice for various challenging imaging applications. One class of SPCs based on the single-photon avalanche diode (SPAD) detects individual photons using an avalanche process; the raw photon data can then be processed to extract scene information under extremely low light, high dynamic range, and rapid motion. Yet, single-photon sensitivity in SPADs comes at a cost — each photon detection consumes more energy than that of a CMOS camera. This avalanche power significantly limits sensor resolution and could restrict widespread adoption of SPAD-based SPCs. We propose a computational-imaging approach called photon inhibition to address this challenge. Photon inhibition strategically allocates detections in space and time based on downstream inference task goals and resource constraints. We develop lightweight, on-sensor computational inhibition policies that use past photon data to disable SPAD pixels in real-time, to select the most informative future photons. As case studies, we design policies tailored for image reconstruction and edge detection, and demonstrate, both via simulations and real SPC captured data, considerable reduction in photon detections (over 90% of photons) while maintaining task performance metrics. Our work raises the question of “which photons should be detected?”, and paves the way for future energy-efficient single-photon imaging.

 







 

Lucas Koerner, Shantanu Gupta, Atul Ingle, and Mohit Gupta. "Photon Inhibition for Energy-Efficient Single-Photon Imaging." In European Conference on Computer Vision, pp. 90-107 (2024)
[preprint link]

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Hamamatsu acquires BAE Systems Imaging [Update: Statement from Fairchild Imaging]

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Press release: https://www.hamamatsu.com/us/en/news/announcements/2024/20241105000000.html

Acquisition of BAE Systems Imaging Solutions, Inc. Strengthening the Opto-semiconductor segment and accelerating value-added growth

2024/11/05
Hamamatsu Photonics K.K.

Photonics Management Corp. (Bridgewater, New Jersey, USA), a subsidiary of Hamamatsu Photonics K.K. (Hamamatsu City, Japan), has purchased the stock of BAE Systems Imaging Solutions, Inc. a subsidiary of BAE Systems, Inc. (Falls Church, Virginia, USA). In recognition of the company’s deep roots starting in 1920 as the Fairchild Aerial Camera Corporation, the company will return to the name first used in 2001, Fairchild Imaging.

Fairchild Imaging is a semiconductor manufacturer specializing in high-performance CMOS image sensors in the visible to near-infrared and X-ray regions, and it has the world’s best low-noise CMOS image sensor design technology. Fairchild Imaging’s core products include scientific CMOS image sensors for scientific measurement applications that simultaneously realize high sensitivity, high-speed readout, and low noise, as well as X-ray CMOS image sensors for dental and medical diagnostic applications.

Fairchild Imaging’s core products are two-dimensional CMOS image sensors that take pictures in dark conditions where low noise is essential. These products complement Hamamatsu Photonics’ one-dimensional CMOS image sensors, which are used for analytical instruments and factory automation applications such as displacement meters and encoders. Therefore, Fairchild Imaging’s technologies will enhance Hamamatsu’s CMOS image sensor product line.

Through the acquisition of shares, we expect the following:

1. Promote sales activities of Fairchild Imaging’s products by utilizing the global sales network currently established by Hamamatsu Photonics Group.
2. While Hamamatsu Photonics’ dental business serves the European and the Asian regions including Japan, Fairchild Imaging serves North America. This will lead to the expansion and strengthening of our worldwide dental market share.
3. Fairchild Imaging will become Hamamatsu’s North American design center for 2D, low-noise image sensors. This will strengthen CMOS image sensor design resources and utilize our North American and Japanese locations to provide worldwide marketing and technical support.
4. Create new opportunities and products by combining Fairchild Imaging’s CMOS image sensor design technology with Hamamatsu Photonics’ MEMS technology to support a wider range of custom CMOS image sensors and provide higher value-added products.

BAE Systems is retaining the aerospace and defense segment of the BAE Systems Imaging Solution’s portfolio, which was transferred to the BAE Systems, Inc. Electronic Systems sector, prior to the closing of this stock purchase transaction.

Fairchild Imaging will continue their operating structure and focus on developing and providing superior products and solutions to their customers.
 
 
[Update Nov 6, 2024: statement from Fairchild Imaging]
 
We are very happy to announce a new chapter in the storied history of Fairchild Imaging! BAE Systems, Inc., which had owned the stock of Fairchild Imaging, Inc. for the past 13 years, has processed a stock sale to Photonics Management Corporation, a subsidiary of Hamamatsu Photonics K.K. Resuming the identity as Fairchild Imaging, Inc., we will operate as an independent, yet wholly owned, US entity.

Fairchild Imaging is a CMOS imaging sensor design and manufacturing company, specializing in high-performance image sensors. Our x-ray and visible spectrum sensors provide class leading performance in x-ray, and from ultraviolet through visible and into near-infrared wavelengths. Fairchild Imaging’s core products include medical x-ray sensors for superior diagnostics, as well as scientific CMOS (sCMOS) sensors for measurement applications that simultaneously realize high sensitivity, fast readout, high dynamic range, and ultra-low noise in 4K resolution.
 
Marc Thacher, CEO of Fairchild Imaging, said:
“Joining the Hamamatsu family represents a great opportunity for Fairchild Imaging. Building upon decades of imaging excellence, we look forward to bringing new innovations and technologies to challenging imaging applications like scientific, space, low-light, machine vision, inspection, and medical diagnostics. The acquisition by Hamamatsu will help drive growth and agility as we continue as a design leader for our customers, partners, and employees.”
 
As part of this new chapter, Fairchild Imaging is unveiling its latest evolution of sCMOS sensors: sCMOS 3.1. These patented, groundbreaking imagers redefine the limits of what is possible in CMOS sensors for the most demanding of imaging applications.

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Lynred announces 8.5um pitch thermal sensor

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Link: https://ala.associates/wp-content/uploads/2024/09/241001-Lynred-8.5-micron-EN-.pdf

Lynred demonstrates smallest thermal imaging sensor for future Automatic Emergency Braking Systems (AEB) at AutoSens Europe 

Prototype 8.5 µm pixel pitch technology that shrinks by 50% the volume size of thermal cameras is designed to help automotive OEMs meet tougher future AEB system requirements, particularly at night.

Grenoble, France, October 1, 2024 – Lynred, a leading global provider of high-quality infrared sensors for the aerospace, defense and commercial markets, today announces it will demonstrate a prototype 8.5 µm pixel pitch sensor during AutoSens Europe, a major international event for automotive engineers, in Barcelona, Spain, October 8 – 10, 2024. The 8.5 µm pixel pitch technology is the smallest infrared sensor candidate for future Automatic Emergency Braking (AEB) and Advanced Driver Assistance Systems (ADAS).

The prototype, featuring half the surface of current 12 µm thermal imaging sensors for automotive applications, will enable system developers to build much smaller cameras for integration in AEB systems.

Following a recent ruling by the US National Highway Traffic Safety Administration (NHTSA), AEB systems will be mandatory in all light vehicles by 2029. It sets tougher rules for road safety at night.

The NHTSA sees driver assistance technologies and the deployment of sensors and subsystems as holding the potential to reduce traffic crashes and save thousands of lives per year. The European Traffic Safety Council (ETSC) also recognizes that AEB systems need to work better in wet, foggy and low-light conditions.

Thermal imaging sensors can detect and identify objects in total darkness. As automotive OEMs need to upgrade the performance of AEB systems within all light vehicles, Lynred is preparing a full roadmap of solutions set to help achieve this compliance. Currently gearing up for high volume production of its automotive qualified 12µm product offer, Lynred is ready to deliver the key component enabling Pedestrian Automatic Emergency Braking (PAEB) systems to work in adverse conditions, particularly at night, when more than 75% of pedestrian fatalities occur.

Lynred is among the first companies to demonstrate a longwave infrared (LWIR) pixel pitch technology for ADAS and PAEB systems that will optimize the size to performance ratio of future generation cameras. The 8.5µm pixel pitch technology will divide by two the volume of a thermal imaging camera, resulting in easier integration for OEMs, while successfully maintaining the same performance standards as larger-sized LWIR models.

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Pixelplus new product videos

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PKA210 Seamless RGB-IR Image Sensor

PG7130KA Global shutter Image Sensor


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IISW 2025 Final Call for Papers is out

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The 2025 International Image Sensor Workshop (IISW) provides a biennial opportunity to present innovative work in the area of solid-state image sensors and share new results with the image sensor community. The event is intended for image sensor technologists; in order to encourage attendee interaction and a shared experience, attendance is limited, with strong acceptance preference given to workshop presenters. As is the tradition, the 2025 workshop will emphasize an open exchange of information among participants in an informal, secluded setting beside the Awaji Island in Hyōgo, Japan.

The scope of the workshop includes all aspects of electronic image sensor design and development. In addition to regular oral and poster papers, the workshop will include invited talks and announcement of International Image Sensors Society (IISS) Award winners.

Submission of abstracts:
An abstract should consist of a single page of maximum 500-words text with up to two pages of illustrations (3 pages maximum), and include authors’ name(s), affiliation, mailing address, telephone number, and e-mail address.


The deadline for abstract submission is 11:59pm, Thursday Dec 19, 2024 (GMT).
To submit an abstract, please go to: https://cmt3.research.microsoft.com/IISW2025 

 

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Space & Scientific CMOS Image Sensors Workshop

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The preliminary program for Space & Scientific CMOS Image Sensors Workshop to be held on 26th & 27th November in Toulouse Labège is available.

Registration: https://evenium.events/space-and-scientific-cmos-image-sensors-2024/








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Call for Nominations for the 2025 Walter Kosonocky Award

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International Image Sensor Society calls for nominations for the 2025 Walter Kosonocky Award for Significant Advancement in Solid-State Image Sensors.
 
The Walter Kosonocky Award is presented biennially for THE BEST PAPER presented in any venue during the prior two years representing significant advancement in solid-state image sensors. The award commemorates the many important contributions made by the late Dr. Walter Kosonocky to the field of solid-state image sensors. Personal tributes to Dr. Kosonocky appeared in the IEEE Transactions on Electron Devices in 1997. Founded in 1997 by his colleagues in industry, government and academia, the award is also funded by proceeds from the International Image Sensor Workshop.
 
The award is selected from nominated papers by the Walter Kosonocky Award Committee, announced and presented at the International Image Sensor Workshop (IISW), and sponsored by the International Image Sensor Society (IISS). The winner is presented with a certificate, complementary registration to the IISW, and an honorarium.
 
Please send us an email nomination for this year's award, with a pdf file of the nominated paper (that you judge is the best paper published/ presented in calendar years 2023 and 2024) as well as a brief description (less than 100 words) of your reason nominating the paper. Nomination of a paper from your company/ institute is also welcome.
 
The deadline for receiving nominations is January 15th, 2025.
 
Your nominations should be sent to Yusuke Oike (2025nominations@imagesensors.org), Secretary of the IISS Award Committee.

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Single Photon Workshop 2024 Program Available

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The 11th Single Photon Workshop will be held at the Edinburgh International Conference Centre (EICC) over the five-day period, 18-22nd November 2024.

The full program is available here: https://fitwise.eventsair.com/2024singlephotonworkshop/programme

Here are some image-sensor specific sessions and talks:

Wednesday Nov 20, 2024 Session Title: Superconducting Photon Detectors 1
Chair: Dmitry Morozov
4:40 PM - 5:10 PM
Demonstration of a 400,000 pixel superconducting single-photon camera
Invited Speaker - Adam McCaughan - National Institute of Standards and Technology (NIST)
5:10 PM - 5:15 PM
Company Symposium: Photon Spot Platinum Sponsor Speaker: Vikas Anant
5:15 PM - 5:30 PM
Development of Superconducting Wide Strip Photon Detector Paper Number: 112 Speaker: Shigehito Miki - National Institute of Information and Communications Technology (NICT)
5:30 PM - 5:45 PM
Superconducting nanowire single photon detectors arrays for quantum optics Paper Number: 34 Speaker: Val Zwiller - KTH Royal Institute of Technology
5:45 PM - 6:00 PM
Single photon detection up to 2 µm in pair of parallel microstrips based on NbRe ultrathin films
Paper Number: 80 Speaker: Loredana Parlato - University of Naples Federico II
6:00 PM - 6:15 PM
Reading out SNSPDs with Opto-Electronic Converters Paper Number: 87 Speaker: Frederik Thiele - Paderborn Univeristy
6:15 PM - 6:30 PM
Development of Mid to Far-Infrared Superconducting Nanowire Single Photon Detectors Paper Number: 195 Speaker: Sahil Patel - California Institute Of Technology

Thursday Nov 21, 2024 Session Title: Superconducting Photon Detectors 2
Chair: Martin J Stevens
8:30 AM - 8:45 AM
Opportunities and challenges for photon-number resolution with SNSPDs Paper Number: 148 Speaker: Giovanni V Resta - ID Quantique
8:45 AM - 9:00 AM
Detecting molecules at the quantum yield limit for mass spectroscopy with arrays of NbTiN superconducting nanowire detectors Paper Number: 61 Speaker: Ronan Gourgues - Single Quantum
9:00 AM - 9:30 AM
Current state of SNSPD arrays for deep space optical communication Invited Speaker - Emma E Wollman - California Institute Of Technology
9:30 AM - 9:35 AM
Company Symposium: Quantum Opus/MPD presentation Platinum Sponsors
9:35 AM - 9:50 AM
Novel kinetic inductance current sensor for transition-edge sensor readout Paper Number:238 Speaker: Paul Szypryt - National Institute of Standards and Technology (NIST)
9:50 AM - 10:05 AM
Quantum detector tomography for high-Tc SNSPDs Paper Number: 117 Speaker: Mariia Sidorova - Humboldt University of Berlin
10:05 AM - 10:20 AM
Enhanced sensitivity and system integration for infrared waveguide-integrated superconducting nanowire single-photon detectors Paper Number: 197 Speaker: Adan Azem - University Of British Columbia

 

Thursday Nov 21, 2024 Session Title: SPADs 1
Chair: Chee Hing Tan
11:00 AM - 11:30 AM
A 3D-stacked SPAD Imager with Pixel-parallel Computation for Diffuse Correlation Spectroscopy
Invited Speaker - Robert Henderson - University of Edinburgh
11:30 AM - 11:45 AM
High temporal resolution 32 x 1 SPAD array module with 8 on-chip 6 ps TDCs
Paper Number: 182 Speaker: Chiara Carnati - Politecnico Di Milano
11:45 AM - 12:00 PM
A 472 x 456 SPAD Array with In-Pixel Temporal Correlation Capability and Address-Based Readout for Quantum Ghost Imaging Applications
Paper Number: 186 Speaker :Massimo Gandola - Fondazione Bruno Kessler
12:00 PM - 12:15 PM
High Performance Time-to-Digital Converter for SPAD-based Single-Photon Counting applications
Paper Number: 181 Speaker: Davide Moschella - Politecnico Di Milano
12:15 PM - 12:30 PM
A femtosecond-laser-written programmable photonic circuit directly interfaced to a silicon SPAD array
Paper Number: 271 Speaker: Francesco Ceccarelli - The Istituto di Fotonica e Nanotecnologie (CNR-IFN)

Thursday Nov 21, 2024 Session Title: SPADs 2
Chair: Alberto Tosi
2:00 PM - 2:30 PM
Ge-on-Si Technology Enabled SWIR Single-Photon Detection
Invited Speaker - Neil Na - Artilux
2:30 PM - 2:45 PM
The development of pseudo-planar Ge-on-Si single-photon avalanche diode detectors for photon detection in the short-wave infrared spectral region
Paper Number: 254 Speaker: Lisa Saalbach - Heriot-Watt University
2:45 PM - 3:00 PM
Hybrid integration of InGaAs/InP single photon avalanche diodes array and silicon photonics chip
Paper Number: 64 Speaker: Xiaosong Ren - Tsinghua University
3:00 PM - 3:15 PM
Dark Current and Dark Count Rate Dependence on Anode Geometry of InGaAs/InP Single-Photon Avalanche Diodes
Paper Number: 248 Speaker: Rosemary Scowen - Toshiba Research Europe
3:15 PM - 3:30 PM
Compact SAG-based InGaAs/InP SPAD for 1550nm photon counting
Paper Number: 111 Speaker: Ekin Kizilkan - École Polytechnique Fédérale de Lausanne (EPFL)

Thursday Nov 21, 2024 Session Title: Single-photon Imaging and Sensing 1
Chair: Aurora Maccarone
4:15 PM - 4:45 PM
Single Photon LIDAR goes long Range
Invited Speaker - Feihu Xu - USTC China
4:45 PM - 5:00 PM
The Deep Space Optical Communication Photon Counting Camera
Paper Number: 11 Speaker: Alex McIntosh - MIT Lincoln Laboratory
5:00 PM - 5:15 PM
Human activity recognition with Single-Photon LiDAR at 300 m range
Paper Number: 232 Speaker: Sandor Plosz - Heriot-Watt University
5:15 PM - 5:30 PM
Detection Times Improve Reflectivity Estimation in Single-Photon Lidar
Paper Number: 273 Speaker: Joshua Rapp - Mitsubishi Electric Research Laboratories
5:30 PM - 5:45 PM
Bayesian Neuromorphic Imaging for Single-Photon LiDAR
Paper Number: 57 Speaker: Dan Yao - Heriot-Watt University
5:45 PM - 6:00 PM
Single Photon FMCW LIDAR for Vibrational Sensing and Imaging
Paper Number: 23 Speaker: Theodor Staffas - KTH Royal Institute of Technology

Friday Nov 22, 2024 Session Title: Single-photon Imaging 2
9:00 AM - 9:15 AM
Quantum-inspired Rangefinding for Daytime Noise Resistance
Paper Number:208 Speaker: Weijie Nie - University of Bristol
9:15 AM - 9:30 AM
High resolution long range 3D imaging with ultra-low timing jitter superconducting nanowire single-photon detectors
Paper Number: 296 Speaker: Aongus McCarthy - Heriot-Watt University
9:30 AM - 9:45 AM
A high-dimensional imaging system based on an SNSPD spectrometer and computational imaging
Paper Number: 62 Speaker: Mingzhong Hu - Tsinghua University
9:45 AM - 10:00 AM
Single-photon detection techniques for real-time underwater three-dimensional imaging
Paper Number: 289 Speaker: Aurora Maccarone - Heriot-Watt University
10:00 AM - 10:15 AM
Photon-counting measurement of singlet oxygen luminescence generated from PPIX photosensitizer in biological media
Paper Number: 249 Speaker: Vikas - University of Glasgow
10:15 AM - 10:30 AM
A Plug and Play Algorithm for 3D Video Super-Resolution of single-photon data
Paper Number:297 Speaker: Alice Ruget - Heriot-Watt University

Friday Nov 22, 2024 Session Title: Single-photon Imaging and Sensing 2
11:00 AM - 11:30 AM
Hyperspectral Imaging with Mid-IR Undetected Photons
Invited Speaker - Sven Ramelow - Humboldt University of Berlin
11:30 AM - 11:45 AM
16-band Single-photon imaging based on Fabry-Perot Resonance
Paper Number: 35 Speaker: Chufan Zhou - École Polytechnique Fédérale de Lausanne (EPFL)
11:45 AM - 12:00 PM
High-frame-rate fluorescence lifetime microscopy with megapixel resolution for dynamic cellular imaging
Paper Number: 79 Speaker: Euan Millar - University of Glasgow
12:00 PM - 12:15 PM
Beyond historical speed limitation in time correlated single photon counting without distortion: experimental measurements and future developments
Paper Number: 237 Speaker: Giulia Acconcia - Politecnico Di Milano
12:15 PM - 12:30 PM
Hyperspectral mid-infrared imaging with undetected photons
Paper Number: 268 Speaker: Emma Pearce - Humboldt University of Berlin
12:30 PM - 12:45 PM
Determination of scattering coefficients of brain tissues by wide-field time-of-flight measurements with single photon camera.
Paper Number: 199 Speaker: André Stefanov - University Of Bern

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Image sensor basics

Image Sensors World        Go to the original article...

These lecture slides by Prof. Yuhao Zhu at U. Rochester are a great first introduction to how an image sensor works. A few selected slides are shown below. For the full slide deck visit: https://www.cs.rochester.edu/courses/572/fall2022/decks/lect10-sensor-basics.pdf

 













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SLVS-EC IF Standard v3 released

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Link: http://jiia.org/en/slvs-ec-if-standard-version-3-0-has-been-released/

Embedded Vision I/F WG has released "SLVS-EC IF Standard Version 3.0”.
Version 3.0 supports up to 10Gbps/lane, which is 2x faster than Version 2.0, and improved data transmission efficiency.

Link: https://www.m-pression.com/solutions/hardware/slvs-ec-rx-30-ip

SLVS-EC v3.0 Rx IP is an interface IP core that runs on Altera® FPGAs. Using this IP, you can quickly and easily implement products that support the latest SLVS-EC standard v3.0. You will also receive an "Evaluation kit" for early adoption.

  •  Altera® FPGAs can receive signals directly from the SLVS-EC Interface.
  •  Compatible with the latest SLVS-EC Specification Version 3.0.
  •  Supports powerful De-Skew function. Enables board design without considering Skew that occurs between lanes.
  •  "Evaluation kit”(see below) is available for speedy evaluation at the actual device level.

 About SLVS-EC:

SLVS-EC (Scalable Low Voltage Signaling with Embedded Clock) is an interface standard for high-speed & high-resolution image sensors developed by Sony Semiconductor Solutions Corporation. The SLVS-EC standard is standardized by JIIA (Japan Industrial Imaging Association).



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Emberion 50 euro CQD SWIR imager

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From: https://invision-news.de/allgemein/extrem-kostenguenstiger-swir-sensor/

Emberion is introducing an extremely cost-effective SWIR sensor that covers a range from 400 to 2,000 nm and whose manufacturing costs for large quantities are less than €50. The sensors are smaller and lighter, which expands the application possibilities of this technology in a wide range of applications. They combine Emberion's existing patented Quantom Dot technology with the patented wafer-level packaging.

Press release from Emberion: https://www.emberion.com/emberion-oy-introduces-groundbreaking-ultra-low-cost-swir-sensor/

The unique SWIR image sensor’s manufacturing cost is less than 50€ in large volume production.

Espoo, Finland — 1.10.2024 — The current cost level of SWIR imaging technology seriously limits the use of SWIR imaging in a variety of industrial, defense & surveillance, automotive and professional/consumer applications. Emberion Oy, a leading innovator in quantum dot based shortwave infrared sensing technology, is excited to announce its new ultra-low cost SWIR (Short-Wave Infrared) sensor that brings the sensor production cost down to €50 level in large volumes. This revolutionary product is set to deliver high-performance infrared imaging to truly mass-market applications such as automotive and consumer electronics as well as enabling much wider deployment of SWIR imaging in industrial, defence and surveillance applications. The revolutionary sensors are also smaller in size and weight, further extending the possibilities to use this technology in a variety of use cases. Emberion is already shipping extended range high speed SWIR cameras and will bring first ultra-low cost sensor based products to the market in 2025.

 

Bringing Advanced Imaging to Everyday Devices at a fraction of current cost

The new Emberion sensor family is designed to make advanced shortwave infrared technology accessible to wider markets, including large volume markets such as automotive sensing and consumer electronics. The new ultra-low cost SWIR sensor combines Emberion’s existing patented quantum dot sensor technology with Emberion’s patented wafer-level packaging to drastically reduce the manufacturing costs of packaged sensors. Current InGaAs and quantum dot based image sensors are typically packaged in metal or ceramic casings with a total production cost for packaged imagers in the range of several hundred euros to a few thousand euros depending on sensor technology, imager wavelength range, packaging choices and production volumes. Emberion’s sensors are manufactured and packaged on a full wafer with up to 100 imagers on a single 8” wafer, making the production cost of a single sensor to be a fraction of current alternatives. In addition to low cost, the sensor enables high integration of functionality into the in-house designed read-out IC, reduces size and weight, and provides stability in performance, enabling new functionalities in everyday technology that were once only available in high-end or niche markets.

Examples of applications that require low-cost, compact sensors:

  • Automotive Industry: Enhanced driver assistance systems (ADAS) with improved visibility in demanding weather conditions for increased safety and performance.
  • Consumer Electronics: Integrating SWIR sensors into smartphones and wearable devices, allowing for facial recognition in all lighting conditions, gesture control, and material identification.
  • Augmented and Virtual Reality (AR/VR): Enabling more accurate environmental sensing for immersive, real-world interaction in AR/VR environments.
  • Drones: Precision vision systems for navigation and object detection in both consumer and defence markets.

Some of the key benefits of the Emberion SWIR sensor include:

  • Cost Efficiency: Thanks to wafer-level packaging, the production process is streamlined, making this sensor by magnitude more affordable than any existing SWIR solution. Also, the high sensor integration level with image processing embedded into the sensor decreases the need for image post processing significantly and decreases the need for camera components on system level.
  • Size, weight and power (SWaP) optimization: The miniature and power efficient design is ideal for space-constrained applications like consumer electronics and automotive components. The high sensor integration level is also a significant contributor to the system SWaP optimization.
  • Stability: The wafer-level packaging improves the sensor stability and protection and makes it suitable for demanding environments like automotive and outdoor applications. It can also be integrated into external packaging if needed, e.g. LCC or metal packaging.
  • Extended Wavelength Sensitivity: Covering a range from 400 nm to 2000 nm, ideal for detecting objects and scenes extending the spectral range beyond traditional SWIR sensors.

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Conference List – January 2025

Image Sensors World        Go to the original article...

IEEE Applied Sensing Conference - 20-22 Jan 2025 - Hyderabad, India - Website

SPIE Photonics West - 25-30 Jan 2025 - San Francisco, CA, USA - Website

(Note that Electronic Imaging is in February in 2025)

Return to Conference List Index

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CVSENS raises series A funding

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CVSENS is a high-performance CIS design company headquartered in Shenzhen:  http://www.cvsens.com/language/en/

Original news in Chinese: https://laoyaoba.com/n/919232

Translation from Google Translate:

AVC Semiconductor completes a new round of financing of hundreds of millions of yuan to accelerate the localization of high-end CMOS image sensor chips

Recently, CVSENS successfully completed its A round of financing of hundreds of millions of yuan. The financing was led by Hanlian Semiconductor Industry Fund , and co-invested with Zhejiang University Education Foundation and Shanghai Anchuang Chuangxin , which indicates the market's high recognition and confidence in CVSENS.

As a leading CMOS image sensor chip developer in China, Chuangshi Semiconductor focuses on the design and development of high-value-added CMOS image sensor chips, and is committed to providing customers with better quality and more efficient services and products. With more than 15 years of experience in high-end product development, the core team of Chuangshi Semiconductor has broken through the core technology barriers of high-end CIS in various application fields. At present, more than ten CIS chips have been launched, all of which have been successfully taped out at one time, covering multiple application directions such as smart security, low-power IoT, smart cars, and machine vision. Many of the industry's first innovative products have won unanimous praise from clients. In the future, Chuangshi Semiconductor will continue to deepen its image sensor technology, promote industrial upgrading, and lead the new direction of industry development.

Hanlian Semiconductor Industry Fund said: We are optimistic about the huge development space in the field of image sensors and the market opportunities for domestic manufacturers. The Chuangshi Semiconductor team has excellent technical capabilities, business focus and product innovation capabilities, and is a new force in the industry with comprehensive competitiveness. At the same time, working with Chuangshi Semiconductor is an important part of Hanlian Semiconductor Industry Fund's layout in the field of vision. We hope that in the future, Chuangshi Semiconductor will work closely with other projects in our system to jointly develop first-class products and forward-looking innovative technologies in the industry, and provide better product solutions for more application scenarios.

Shanghai Anchuang Chuangxin Enterprise Management Consulting Partnership stated: As a corporate consulting and investment institution focusing on the high-tech field, we are very optimistic about the image sensor chip R&D team of AVC Semiconductor and its outstanding product innovation capabilities. This investment not only provides financial support for AVC Semiconductor, but also uses our ecosystem resources and industry-leading technologies to provide AVC Semiconductor with in-depth industrial links through innovation empowerment, helping to achieve longer-term development goals. We are full of confidence in participating in this investment in AVC Semiconductor, and look forward to helping AVC Semiconductor achieve greater success in technological innovation, market expansion and brand building, and work with AVC Semiconductor to create a new chapter in the image sensor industry.

The founder of AVC Semiconductor said: "I am very honored to receive joint investment from Hanlian Semiconductor Industry Fund, the Education Foundation of my alma mater Zhejiang University, and Shanghai Anchuang Chuangxin Enterprise Management Consulting Partnership. This is not only a recognition of AVC Semiconductor's past achievements, but will also help the company further promote technological innovation, enhance market competitiveness, and inject vitality into the company's long-term development. Since its establishment, AVC Semiconductor has been focusing on the research and development and innovation of CMOS image sensor chips. Its products and services are widely used in many fields such as automotive vision, smart security, low-power IoT, machine vision, and medical vision, constantly promoting technological progress and meeting market demand. We also look forward to working with more partners to jointly promote the innovative development of the image sensor industry."

Transvision Semiconductor will continue to take technological innovation as the core driving force, uphold the core concept of "gratitude, pragmatism and courage to innovate", actively seize market opportunities, continuously expand market share, strengthen industrial chain collaboration, and practice sustainable development, aiming to become a global leading CIS solution provider and provide customers with better quality and more efficient services and products.

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Galaxycore chip-on-module packaging for CIS

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Link: https://en.gcoreinc.com/news/detail-69

 


The performance of an image sensor relies not only on its design and manufacturing but also on the packaging technology.

CIS packaging is particularly challenging, as any particle in the environment that drops on the sensor surface during the process can cause a significant affect on the final image quality. GalaxyCore’s COM (Chip on Module) packaging technology has revolutionized traditional CSP (Chip Scale Package) and COB (Chip on Board) methods, enhancing the performance, reliability, and applicability of the optical system of camera modules.

Birth of the COM Packaging

Before the advent of COM packaging, CSP and COB were the predominant packaging choices for CIS. CSP places a layer of glass on the sensor to prevent dust. However, the glass also reflects some light, thus degrading image quality. COB requires an exceptionally demanding environment, typically a Class 100 clean room.

Is there an alternative? GalaxyCore’s technical team developed an innovative solution by directly suspending gold wire to serve as pins. In the fantastic microscopic realm, the short gold wire becomes hard and elastic, which can used directly as pins.

At GalaxyCore’s Class 100 clean rooms in the packaging and testing factory in Jiashan City, Zhejiang Province, a fully-automated high-precision equipment bonds the gold wire to the image sensor with exacting accuracy. The sensor is then mounted on a filter base, and the other end of the gold wire is suspended as the pin. The pin is subsequently soldered by the camera module manufacturer to the FPCB. When assembled with a lens and the actuator, a complete camera module can be formed.

We were pleasantly surprised to discover that the performance and reliability of the COM packaging are on par with, or even exceed, those of high-end COB packaging.

Three Advantages for System-level Improvement

1. Enhanced Optical System Performance
The COM packaging notably enhances the optical system performance of camera modules. In the COB packaging, the chip is directly mounted on the FPCB. However, the FPCB is prone to deformation during production, which may lead to the tilt of the optical axis and further affect the image quality.
In GalaxyCore’s COM packaging, both the chip and lens use the filter base as the benchmark, thus mitigating the optical axis tilt caused by FPCB deformation. This significantly improves the edge resolution of images, especially in large aperture and high-pixel camera modules.

2. Improved Module Reliability and Flexibility
In the COM packaging, due to a certain distance between the chip and the FPCB, the camera module is subject to greater back pressure, thus improving the reliability and durability of the module.
In the COB packaging, the CIS directly mounted on the FPCB is more sensitive to the back pressure, and the SFR (i.e. image resolution) is more likely to be affected. By contrast, in the COM packaging, the CIS chip is relatively isolated and suspended, making it hard for the back pressure to directly act on the CIS chip. As such, a better image resolution can be achieved. Different from the COB packaging, the COM packaging connects the chip pins and pads through soldering. This solution reduces the material requirements for the FPCB and further enhances its adaptability and flexibility.

3. Minimized Module
In the COM packaging, FPCB can be hollowed out to allow the chip to sink into it. Compared to the COB packaging with direct mounting of chip on the FPCB or reinforcement of steel sheets, the COM solution can control the back pressure more effectively and reduce the requirements for steel sheet thickness. This enhances the height advantage of the overall packaging module, to meet cell phones’ stringent requirements for space. This advantage is more notable in devices seeking thin and light designs.

GalaxyCore’s COM packaging ensures both high performance and reliability for the optical system while simplifying the subsequent production processes for module manufacturers. This method reduces the dependence on dust-free environments and enhances quality, yield, and efficiency. With the mass production of COM chips and further application of this technology, it will deliver improved imaging performance across a broader range of end products.

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EI2025 late submissions deadline tomorrow Oct 15, 2024

Image Sensors World        Go to the original article...

Electronic Imaging 2025 is accepting submissions --- late submission deadline is tomorrow (Oct 15, 2024). The Electronic Imaging Symposium comprises 17 technical conferences to be held in person at the Hyatt Regency San Francisco Airport in Burlingame, California.


IMPORTANT DATES

Journal-first (JIST/JPI) Submissions Due 15 Aug
Final Journal-first manuscripts due 31 Oct
Late Submission Deadline 15 Oct
FastTrack Proceedings Manuscripts Due 8 Jan 2025
All Outstanding Manuscripts Due 21 Feb 2025

Registration Opens mid-Oct
Demonstration Applications Due 21 Dec
Early Registration Ends 18 Dec


Hotel Reservation Deadline 10 Jan
Symposium Begins 2 Feb
Non-FastTrack Proceedings Manuscripts Due
21 Feb

There are three submission options to fit your publication needs: journal, conference, and abstract-only.



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Lynred acquires NIT

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Press release: https://ala.associates/corporate/lynred-acquires-new-imaging-technologies-to-consolidate-leadership-in-infrared-sensors/

Acquisition of Paris-based SWIR imaging provider expands Lynred’s product portfolio to include coveted large format shortwave sensors with small pixel pitch

Grenoble, France, October 7, 2024 – Lynred, a leading global provider of high-quality infrared sensors for the aerospace, defense and commercial markets, today announces its acquisition of New Imaging Technologies, a Paris-based shortwave infrared (SWIR) imaging modules and sensors provider. In a strategic move to consolidate its leadership in infrared sensors, Lynred’s product portfolio will expand to include high-definition large array SWIR sensors in small pixel pitch, bolstering its product offering across all wavelength bands (short to very longwave). The transaction is expected to close in Q4, 2024 and is subject to customary conditions.

The deal includes New Imaging Technologies’ large and innovative portfolio of SWIR products (imaging sensors and modules) and a portfolio of wide dynamic range patents. This enables Lynred to offer global customers large format SWIR sensors with advanced capabilities for applications in markets where AI, deep learning and multispectral imaging are driving growth.
New Imaging Technologies (NIT) is the only European firm to manufacture and market a SWIR HD1080p array and associated module at a pixel size of 8µm, a key asset for several applications that Lynred will now leverage.

“Lynred’s acquisition of NIT is a growth accelerator. We will shorten time to market and leverage synergies in offering state-of-the-art SWIR products. The global market for SWIR infrared imaging for machine vision is growing fast, as well as for defense applications, such as laser detection and in new space,” said Hervé Bouaziz, executive president at Lynred. “NIT brings to Lynred the agility of a small, innovative organization, with an extensive product offering able to cater to our large customer base. As we share complementary industrial supply chains and technical skills, we can deliver highly competitive SWIR imaging sensors and modules to customers.” 

This strategic acquisition is yet another significant investment Lynred is making in order to strengthen its leadership in infrared, a critical technology for a growing range of commercial applications and sovereign activities. In parallel, Lynred is investing significantly in its ongoing Campus project. Campus includes the construction of state-of-the-art clean rooms that will double Lynred’s current capacity.

Lynred and NIT will attend Vision Stuttgart in Germany (October 8-10), booth #8C46, and AUSA (October 14-16), in Washington DC, booth #8015, showcasing products based on the companies’ latest technological achievements. These two important trade shows will give them the opportunity to share further information and answer any questions about the acquisition.

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Another PhD Defense Talk on Event Cameras

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Thesis title: A Scientific Event Camera: Theory, Design, and Measurements
Author: Rui Garcia
Advisor: Tobi Delbrück


 See also, earlier post about the PhD thesis abstract and full text link: https://image-sensors-world.blogspot.com/2024/08/phd-thesis-on-scidvs-event-camera.html

The full thesis text is available here after the embargo ends in July 2026: https://www.research-collection.ethz.ch/handle/20.500.11850/683623

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Artilux paper on room temperature quantum computing using Ge-Si SPADs

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Neil Na et al from Artilux and UMass Boston have published a paper titled "Room-temperature photonic quantum computing in integrated silicon photonics with germanium–silicon single-photon avalanche diodes" in APL Quantum.

Abstract: Most, if not all, photonic quantum computing (PQC) relies upon superconducting nanowire single-photon detectors (SNSPDs) typically based on niobium nitride (NbN) operated at a temperature <4 K. This paper proposes and analyzes 300 K waveguide-integrated germanium–silicon (GeSi) single-photon avalanche diodes (SPADs) based on the recently demonstrated normal-incidence GeSi SPADs operated at room temperature, and shows that their performance is competitive against that of NbN SNSPDs in a series of metrics for PQC with a reasonable time-gating window. These GeSi SPADs become photon-number-resolving avalanche diodes (PNRADs) by deploying a spatially-multiplexed M-fold-waveguide array of M GeSi SPADs. Using on-chip waveguided spontaneous four-wave mixing sources and waveguided field-programmable interferometer mesh circuits, together with the high-metric SPADs and PNRADs, high-performance quantum computing at room temperature is predicted for this PQC architecture.

Link: https://doi.org/10.1063/5.0219035

Schematic plot of the proposed room-temperature PQC paradigm with integrated SiPh using the path degree of freedom of single photons: single photons are generated through SFWM (green pulses converted to blue and red pulses) in SOI rings (orange circles), followed by active temporal multiplexers (orange boxes that block the blue pulses), and active spatial multiplexers (orange boxes that convert serial pulses to parallel pulses) (quantum sources), manipulated by a FPIM using cascaded MZIs (quantum circuits), and measured by the proposed waveguide GeSi SPADs as SPDs and/or NPDs (quantum detectors). An application-specific integrated circuit (ASIC) layer is assumed to be flipped and bonded on the PIC layer with copper (Cu)–Cu pillars (yellow lines) connected wafer-level hybrid bond, or with metal bumps (yellow lines) connected chip-on-wafer-on-substrate (CoWoS) packaging. The off-chip fiber couplings are either for the pump lasers or the optical delay lines.

 


 (a) Top view of the proposed waveguide GeSi SPAD, in which the materials assumed are listed. (b) Cross-sectional view of the proposed waveguide GeSi SPAD, in which the variables for optimizing QE are illustrated.

 

 

(a) QE of the proposed waveguide GeSi SPAD without the Al back mirror, simulated at 1550 nm as a function of coupler length and Ge length. (b) QE of the proposed waveguide GeSi SPAD with the Al back mirror, simulated at 1550 nm as a function of gap length and Ge length. (c) QE of the proposed waveguide GeSi SPAD with the Al back mirror, simulated as a function of wavelength centered at 1550 ± 50 nm (around the C band) and 1310 ± 50 nm (around the O band), given the optimal conditions, that is, coupler length equal to 1.4 μm, gap length equal to 0.36 μm, and Ge length equal to 14.2 μm. While the above data are obtained by 2D FDTD simulations, we also verify that for Ge width >1 μm and mesa design rule <200 nm, there is little difference between the data obtained by 2D and 3D FDTD simulations.


Dark current of GeSi PD at −1 V reverse bias, normalized by its active region circumference, plotted as a function of active region diameter. The experimental data (blue dots) consist of the average dark current between two device repeats (the ratio of the standard deviation to the average is <2%) for five different active region diameters. The linear fitting (red line) shows the bulk dark current density and the surface dark current density with its slope and intercept, respectively.



For the scheme of photon-based PQC: (a) The probability of successfully detecting N photon state and (b) the fidelity of detecting N photon state, using M spatially-multiplexed waveguide GeSi SPADs at 300 K as an NPD. (c) The difference in the probabilities of successfully detecting N photon state, and (b) the difference in the fidelities of detecting N photon state, using M spatially-multiplied waveguide GeSi SPADs at 300 K and NbN SNSPDs at 4 K as NPDs. Note that no approximation is used in the formula for plotting these figures.



For the scheme of qubit-based PQC: (a) The probability of successfully detecting N qubit state, and the fidelity of detecting N qubit state, using single waveguide GeSi SPADs at 300 K as SPDs. (b) The difference in the probabilities of successfully detecting N qubit state, and the difference in the fidelities of detecting N qubit state, using single waveguide GeSi SPADs at 300 K and NbN SNSPDs at 4 K as SPDs. Note that no approximation is used in the formula for plotting these figures.




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Conference List – December 2024

Image Sensors World        Go to the original article...

RSNA 2024  - 1-5 December 2024 - Chicago, Illinois, USA - Website

21st Annual IEEE International Conference on Sensing, Communication, and Networking - 2-4 Dec 2024 - Phoenix, Arizona, USA - Website

Asia-Pacific Remote Sensing - 2-5 December 2024 - Kaohsiung, Taiwan - Website

International Technical Exhibition on Image Technology and Equipment (ITE) - 4-6 Dec 2024 - Yokohama, Japan - Website

IEEE International Electron Devices Meeting - 7-11 Dec 2024 - San Francisco, CA, USA - Website

17th International Conference on Sensing Technology (ICST2024) - 9-11 Dec 2024 - Sydney, Australia - Website

If you know about additional local conferences, please add them as comments.

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Image sensors review paper

Image Sensors World        Go to the original article...

Eric Fossum, Nobukazu Teranishi, and Albert Theuwissen have published a review paper titled "Digital Image Sensor Evolution and New Frontiers" in the Annual Review of Vision Science.

Link: https://doi.org/10.1146/annurev-vision-101322-105538

Abstract:

This article reviews nearly 60 years of solid-state image sensor evolution and identifies potential new frontiers in the field. From early work in the 1960s, through the development of charge-coupled device image sensors, to the complementary metal oxide semiconductor image sensors now ubiquitous in our lives, we discuss highlights in the evolutionary chain. New frontiers, such as 3D stacked technology, photon-counting technology, and others, are briefly discussed.



Figure 1  Illustration of a four-phase charge-coupled device diagram, a potential well diagram, and clock charts. As four clocks switch sequentially, the potential wells move rightward together with the charge packets.

Figure 2  Illustration of a (three-phase) interline-transfer (ILT) charge-coupled device (CCD) showing (left) a unit cell with a photodiode (PD) and vertical CCD and (right) the entire ILT CCD image sensor. The photosignal moves from the PD into the vertical CCD, and then into the horizontal CCD to the sense node and output amplifier.



Figure 3  A pinned PD in an interline-transfer CCD with one phase of the CCD shift register (VCCD) shown. (a) A physical cross-section and (b) a potential diagram showing the electrons transferring from the PD to the VCCD. Abbreviations: CCD, charge-coupled device; CS, channel stop; PD, photodiode; TG, transfer gate; VCCD, vertical CCD.



Figure 4  Microlenses to concentrate light on the photoactive area of a pixel. (a) Top view. (b) Cross-sections for different thermal-flow times. Images courtesy of NEC Corp.

Figure 5  A 16-Mpixel stitched complementary metal oxide semiconductor image sensor on a 6-inch-diameter wafer. Figure reproduced from Ay & Fossum (2006).


Figure 6  (a) Complementary metal oxide semiconductor (CMOS) image sensor block diagram. (b) Photograph of early Photobit CMOS image sensor chip for webcams. (Left) Digital logic for control and input-output (I/O) functions. (Top right) The pixel array. (Bottom right) The column-parallel analog signal processing and analog-to-digital converter (ADC) circuits. Photo courtesy of E.R.F.


Figure 7  An illustrative PPD 4-T active pixel with intrapixel charge transfer. (a) A circuit schematic (Fossum & Hondongwa 2014). (b) A band diagram looking vertically through the PPD showing the photon, electron–hole pair, and SW. (c) A physical cross-section showing doping levels (Fossum 2023). Abbreviations: COL BUS, column bus line; FD, floating diffusion; PPD, pinned photodiode; RST, reset gate; SEL, select gate; SF, source-follower; SW, storage well; TG, transfer gate.



Figure 8  Illustrative example of (a) a frontside-illuminated pixel and (b) a backside-illuminated (BSI) pixel showing the better light gathering capability of the BSI pixel.



Figure 9  Illustrative cross-sectional comparison of (a) a backside-illuminated device and (b) 3D stacked image sensors where the lower layer is used for additional circuitry.



Figure 10  Quanta image sensor concept showing the spatial distribution of jot outputs (left), an expanded view of jot output bit planes at different time slices (center), and gray-scale image pixels formed from spatiotemporal neighborhoods of jots (right). Figure adapted from Ma et al. (2022a).

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Hamamatsu completes acquisition of NKT Photonics

Image Sensors World        Go to the original article...

Press release: https://www.hamamatsu.com/us/en/news/featured-products_and_technologies/2024/20240531000000.html

Acquisition completion of NKT Photonics. Accelerating growth in the semiconductor, quantum, and medical fields through laser business enhancement.

Hamamatsu Photonics K.K. (hereinafter referred to as “Hamamatsu Photonics”) is pleased to announce the completion of the previously published acquisition of NKT Photonics A/S (hereinafter referred to as “NKT Photonics”).
 
NKT Photonics is the leading supplier of high-performance fiber lasers and photonic crystal fibers. Based on their unique fiber technology, the laser products fall within three major product lines:

  1.  Supercontinuum White Light Lasers (SuperK): The SuperK lasers deliver high brightness in a broad spectral range (400 nm-2500 nm), and are used within bio-imaging, semiconductor metrology, and device-characterization.
  2.  Single-Frequency DFB Fiber Lasers (Koheras): The Koheras lasers have extremely high wavelength stability and low noise, and are ideal for fiber sensing, quantum computing, and quantum sensing.
  3.  Ultra-short pulse Lasers (aeroPULSE and Origami): This range of lasers consists of picosecond and femtosecond pulsed lasers with excellent beam quality and stability. The lasers are mainly used within ophthalmic surgery, bio-imaging, and optical processing applications.

 
The acquisition enables us to combine Hamamatsu Photonics’ detectors and cameras with NKT Photonics' lasers and fibers, thereby offering unique system solutions to the customers.
 
One special market of interest is the rapidly growing quantum computing area. Here NKT Photonics’ Koheras lasers serve customers with trapped ions systems requiring high power narrow linewidth lasers with extremely high wavelength stability and low noise. The same customers use Hamamatsu Photonics’ high-sensitivity cameras and sensors to detect the quantum state of the qubits. Together, we will be able to provide comprehensive solutions including lasers, detectors, and optical devices for the quantum-technology market.
 
Another important area of collaboration is the semiconductor market. With the trend toward more complex three-dimensional semiconductor devices, there is an increasing demand for high precision measurement equipment covering a wide range of wavelengths. By combining NKT Photonics' broadband SuperK lasers with Hamamatsu Photonics’ optical sensors and measuring devices, we can supply expanded solutions for semiconductor customers needing broader wavelength coverage, multiple measurement channels, and higher sensitivity.
 
Finally, in the hyperspectral imaging market, high-brightness light sources with a broad spectral range from visible to near-infrared (400 nm-2500 nm) are essential. Additionally, unlike halogen lamps, since no heat generation occur, the demand for NKT Photonics' SuperK is increasing. We can provide optimal solutions by integrating it with Hamamatsu Photonics’s image sensors and cameras, leveraging the unique compound semiconductor technologies.
 
With this acquisition, Hamamatsu Photonics Group now possesses a very broad range of technologies within light sources, lasers, and detectors. The combination of NKT Photonics and Hamamatsu Photonics will help us to drive our technology to the next level. NKT Photonics will continue their operating structure and focus on providing superior products and solutions to their customers.

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Conference List – November 2024

Image Sensors World        Go to the original article...

6th International Workshop on Image Sensors and Imaging Systems (IWISS2024) - 8 Nov 2024 - Tokyo, Japan - Website

Photonics Spectra Sensors & Detectors Summit 2024 - 13 Nov 2024 - Online - Website

SEMI MEMS & Imaging Sensors Summit - 14 Nov 2024 - Munich, Germany - Website

Eleventh International Workshop on Semiconductor Pixel Detectors for Particles and Imaging (Pixel2024) - 18-22 Nov 2024 - Strasbourg, France - Website

The 6th International Workshop on new Photon-Detectors (PD24) - 19-21 Nov 2024 - Vancouver, BC, Canada - Website

Coordinating Panel for Advanced Detectors Workshop - 19-22 Nov 2024 - Oak Ridge, Tennessee, USA - Website

Compamed - 11-14 Nov 2024 - Dusseldorf, Germany - Website

If you know about additional local conferences, please add them as comments.

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SeeDevice Inc files complaint

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From GlobeNewswire: https://www.globenewswire.com/news-release/2024/09/13/2945864/0/en/SeeDevice-Inc-Files-Complaint-In-U-S-District-Court-Against-Korean-Broadcasting-System.html

SeeDevice Inc. Files Complaint In U.S. District Court Against Korean Broadcasting System

ORANGE, California, Sept. 13, 2024 (GLOBE NEWSWIRE) -- SeeDevice Inc. (“SeeDevice”), together with its CEO and founder Dr. Hoon Kim, has filed a Complaint in the U.S. District Court for the Central District of California against Korean Broadcasting System (KBS), and its U.S. subsidiary KBS America, Inc. (collectively, “KBS”) for trade libel and defamation. The claims are based on an August 25, 2024, broadcast KBS is alleged to have published on its YouTube channel and KBS-america.com (“The KBS Broadcast”).

The complaint asserts that KBS Broadcast published false and misleading statements regarding the viability and legitimacy of SeeDevice and Dr. Kim’s QMOS™ (quantum effect CMOS) SWIR image sensor, as a result of having omitted the fact that in 2009, and again in 2012, the Seoul High Court and Seoul Administrative Court found Dr. Kim’s sensor to be legitimate.

Dr. Kim’s QMOS™ sensor has garnered industry praise and recognition and is the subject of numerous third-party awards. In the past year alone, SeeDevice has been recognized with four awards for outstanding leadership and innovative technology: "20 Most Innovative Business Leaders to Watch 2023" by Global Business Leaders, "Top 10 Admired Leaders 2023" by Industry Era, "Most Innovative Image Technology Company 2023" by Corporate Vision, and “Company of the Year” of the Top 10 Semiconductor Tech Startups 2023 by Semiconductor Review. 

In their lawsuit, SeeDevice and Dr. Kim seek retraction of KBS’s defamatory broadcast, and a correction of the record, in addition to significant monetary damages and injunctive relief preventing further misconduct by KBS.

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Event Cameras for Space Applications

Image Sensors World        Go to the original article...

Dissertation defense by B. McReynolds on his thesis titled "Benchmarking and Pushing the Boundaries of Event Camera Performance for Space and Sky Observations," PhD, ETH Zurich, 2024


Courtesy: Prof. Tobi Delbruck

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Quantum Solutions and Topodrone launch quantum dot SWIR camera

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Press release from Quantum Solutions:

September 19, 2024

QUANTUM SOLUTIONS and TOPODRONE Unveil TOPODRONE x Q.Fly: A Cost-Effective, DJI- Ready Quantum Dot SWIR Camera for UAV Applications

Quantum Solutions and Topodrone are excited to announce the launch of the Q.Fly, a next- generation camera with Quantum Dot Short Wave Infrared (SWIR) imaging capability designed specifically for UAV (drones) platforms. The Q.Fly is fully DJI-ready, working seamlessly out of the box with DJI Matrice 300 and DJI Matrice 350 RTK, offering real-time video streaming, control, and configuration directly from the DJI remote controller.

Developed to make SWIR technology more accessible and affordable for drone service companies and drone users, Q.Fly delivers a ready-to-use solution that eliminates the complexities of integrating advanced sensors into UAV platforms. The camera system also includes an RGB camera and/or a thermal camera for enhanced vision capabilities. With plug- and-play compatibility and unmatched spectral imaging performance, Q.Fly redefines what’s possible for a wide range of airborne applications.

This unique product combines the Quantum Solutions’ Quantum Dot SWIR Imaging technology with TOPODRONE’s UAV expertise, providing a cost-effective alternative to traditional SWIR cameras. Q.Fly covers a broad spectral range from VIS-SWIR (400–1700 nm), making it ideal for a variety of airborne applications that demand precise, high-resolution imaging.

Key Features of Q.Fly:

·       Quantum Dot SWIR Sensor: 640 x 512 pixels, covering a spectral range of 400–1700 nm

·       Cost-Effective and Accessible: Q.Fly offers an affordable solution, finally making SWIR imaging technology accessible to a broader audience of drone users and service providers

·       DJI Integration: Fully compatible with DJI Matrice 300 and Matrice 350 RTK, featuring real-time video streaming, control, and configuration from the remote controller


·       Built-In RGB Cameras with optional Thermal imager: Includes a 16 MP RGB camera for visual positioning and a thermal imager (640 x 512 pixels, 30 Hz) for enhanced versatility

·       High-precision spectral images geo-referencing

·       High-Speed Spectral Imaging: Capable of operating at 220 Hz, delivering superior spectral imaging performance in real-time

·       Lightweight Design: Weighing only 650g with its 3-axis gyrostabilized gimbal, Q.Fly allows for flight times of up to 35 minutes per battery cycle

·       Built-In Linux Computer: Facilitates easy camera control and supports a variety of protocols, including DJI PSDK and Mavlink

·       Filter Flexibility: Supports quick installation of spectral filters to adapt to specific use cases

Q.Fly is designed to serve industries that require precise, reliable, and easy-to-use drone-based imaging solutions, including:

  • Agriculture
  •  Fire Safety and Rescue
  •  Security&surveillance
  •  Industrial Inspection and Surveying

 

Product Launch at INTERGEO 2024
The TOPODRONE x Q.Fly will be officially unveiled at the INTERGEO 2024 exhibition in Stuttgart from September 24–26. This breakthrough technology will be showcased, highlighting its cost-effectiveness and how it can transform UAV imaging for various industries.
Attendees are invited to visit TOPODRONE Booth: Booth Hall 1 - Booth: B1.055 to experience the Q.Fly and learn more about its unparalleled ease of use and advanced SWIR capabilities.
 
Unparalleled Ease of Use for Drone Operators
Q.Fly is designed with drone operators in mind, offering a hassle-free solution that simplifies the often-complex process of integrating advanced sensors into UAV platforms. With its plug- and-play compatibility with DJI drones, users can quickly deploy the Q.Fly for a wide range of applications without the need for complex setup procedures.

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ITE/IISS 6th International Workshop on Image Sensors and Imaging Systems (IWISS2024)

Image Sensors World        Go to the original article...

The 6th International Workshop on Image Sensors and Imaging Systems (IWISS2024) will be held at the Tokyo University of Science on Friday November 8, 2024.

In this workshop, people from various research fields, such as image sensing, imaging systems, optics, photonics, computer vision, and computational photography/imaging, come together to discuss the future and frontiers of image sensor technologies in order to explore the continuous progress and diversity in image sensors engineering and state-of-the-art and emerging imaging systems technologies.


Date: November 8 (Fri), 2024
Venue: Forum-2, Morito Memorial Hall, Building 13, Tokyo University of Science / Online
Access: https://maps.app.goo.gl/LyecM4XUYazco5D79
Address: 4-2-2, Kagurazaka, Shinjuku-ku, Tokyo 162-0825, JAPAN

 

Online registration fees information is available here.
Registration is necessary because the number of seats in person is limited. Online viewing via Zoom is also offered.
Registration deadline is Nov. 5 (Tue).
Register and pay online from the following website: [Online registration page]

[Plenary Talk]
"CMOS Direct Time-of-Flight Depth Sensor for Solid-Sate LiDAR Systems"
by Jaehyuk Choi (SolidVue, Inc., Korea & Sungkyunkwan Univ. (SKKU), Korea)

[8 Invited Talks]
Invited-1 “Plasmonic Color Filters for Multi-spectral Imaging” by Atsushi Ono (Shizuoka Univ., Japan)
Invited-2 (online) “Intelligent Imager with Processing-in-Sensor Techniques” by Chih-Cheng Hsieh (National Tsing Hua Univ. (NTHU), Taiwan)
Invited-3 “Designing a Camera for Privacy Preserving” by Hajime Nagahara (Osaka Univ., Japan)
Invited-4 “Deep Compressive Sensing with Coded Image Sensor” by Michitaka Yoshida (JSPS, Japan), et al.
Invited-5 “Event-based Computational Imaging using Modulated Illumination” by Tsuyoshi Takatani (Univ. of Tsukuba, Japan)
Invited-6 “Journey of Pixel Optics Scaling into Deep Sub-micron and Migration to Meta Optics Era” by In-Sung Joe (Samsung Electronics, Korea)
Invited-7 “Trigger-Output Event-Driven SOI pixel Sensor for X-ray Astronomy” by Takeshi Tsuru (Kyoto Univ., Japan)
Invited-8 “New Perspectives for Infrared Imaging Enabled by Colloidal Quantum Dots” by Pawel E. Malinowski (imec, Belgium), et al.

Sponsored by:
Technical Group on Information Sensing Technologies (IST), the Institute of Image Information and Television Engineers (ITE)
Co-sponsored by:
International Image Sensor Society (IISS)

Group of Information Photonics (IPG) +CMOS Working Group, the Optical Society of Japan
General Chair: Keiichiro Kagawa (Shizuoka Univ., Japan)
Technical Program Committee (Alphabetical order): Keiichiro Kagawa (Shizuoka Univ., Japan), Hiroyuki Suzuki (Gunma Univ., Japan), Hisayuki Taruki (Toshiba Electronic Devices & Storage Corporation, Japan), Min-Woong Seo (Samsung Electronics, Korea), Sanshiro Shishido (Panasonic Holdings Corporation, Japan)

Contact for any question about IWISS2024
E-mail: iwiss2024@idl.rie.shizuoka.ac.jp (Keiichiro Kagawa, Shizuoka Univ., Japan)

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Job Postings – Week of 22 September 2024

Image Sensors World        Go to the original article...

Anduril Industries

Chief Engineer, Imaging

Lexington, Massachusetts, USA

Link

Purdue University

Assistant Professor of Physics and Astronomy

West Lafayette, Indiana, USA

Link

RTX Raytheon

Mixed Signal IC Design Senior Engineer

Goleta, California, USA

Link

Sandia National Laboratories

Postdoctoral Appointee - Optoelectronic and Microelectronic Device Fabrication, Onsite

Albuquerque, New Mexico, USA

Link

Apple

Electrical Engineer - Camera Hardware

San Diego, California, USA

Link

University of Birmingham

Professor of Silicon Detector Instrumentation for Particle Physics

Birmingham, England, UK

Link

Google

Imaging Systems Engineer, Devices and Services

Mountain View, California, USA

Link

Institute of Physics in Prague

Postdoctoral research associate in ATLAS

Prague, Czech Republic

Link

Marvell

Silicon Photonics Engineer

Ottawa, Ontario, Canada

Link

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PhD thesis on CMOS SPAD dToF Systems

Image Sensors World        Go to the original article...

Thesis Title: Advanced techniques for SPAD-based CMOS d-ToF systems
Author: Alessandro Tontini
Affiliation: University of Trento and FBK

Full text available here: [link]

Abstract:

The possibility to enable spatial perception to electronic devices gave rise to a number of important development results in a wide range of fields, from consumer and entertainment applications to industrial environments, automotive and aerospace. Among the many techniques which can be used to measure the three-dimensional (3D) information of the observed scene, the unique features offered by direct time-of-flight (d-ToF) with single photon avalanche diodes (SPADs) integrated into a standard CMOS process result in a high interest for development from both researchers and market stakeholders. Despite the net advantages of SPAD-based CMOS d-ToF systems over other techniques, still many challenges have to be addressed. The first performance-limiting factor is represented by the presence of uncorrelated background light, which poses a physical limit to the maximum achievable measurement range. Another problem of concern, especially for scenarios where many similar systems are expected to operate together, is represented by the mutual system-to-system interference, especially for industrial and automotive scenarios where the need to guarantee safety of operations is a pillar. Each application, with its own set of requirements, leads to a different set of design challenges. However, given the statistical nature of photons, the common denominator for such systems is the necessity to operate on a statistical basis, i.e., to run a number of repeated acquisitions over which the time-of-flight (ToF) information is extracted. The gold standard to manage a possibly huge amount of data is to compress them into a histogram memory, which represents the statistical distribution of the arrival time of photons collected during the acquisition. Considering the increased interest for long-range systems capable of both high imaging and ranging resolutions, the amount of data to be handled reaches alarming levels. In this thesis, we propose an in-depth investigation of the aforesaid limitations. The problem of background light has been extensively studied over the years, and already a wide set of techniques which can mitigate the problem are proposed. However, the trend was to investigate or propose single solutions, with a lack of knowledge regarding how different implementations behave on different scenarios. For such reason, our effort in this view focused on the comparison of existing techniques against each other, highlighting each pros and cons and suggesting the possibility to combine them to increase the performance. Regarding the problem of mutual system interference, we propose the first per-pixel implementation of an active interference-rejection technique, with measurement results from a chip designed on purpose. To advance the state-of-the-art in the direction of reducing the amount of data generated by such systems, we provide for the first time a methodology to completely avoid the construction of a resource-consuming histogram of timestamps. Many of the results found in our investigations are based on preliminary investigations with Monte Carlo simulations, while the most important achievements in terms of interference rejection capability and data reduction are supported by measurements obtained with real sensors.

Contents

Contents
1 Introduction 1
1.1 Single Photon Avalanche Diode (SPAD)
1.1.1 Passive quenching
1.1.2 Active quenching
1.1.3 Photon Detection Efficiency (PDE)
1.1.4 Dark Count Rate (DCR) and afterpulsing

2 Related work
2.1 Pioneering results
2.2 Main challenges
2.3 Integration challenges

3 Numerical modelling of SPAD-based CMOS d-ToF sensors
3.1 Simulator architecture overview
3.2 System features modeling
3.2.1 Optical model
3.2.2 Illumination source - modeling of the laser emission profile
3.3 Monte Carlo simulation
3.3.1 Generation of SPAD-related events
3.3.2 Synchronous and asynchronous SPAD model
3.4 Experimental results
3.5 Summary

4 Analysis and comparative evaluation of background rejection techniques
4.1 Background rejection techniques
4.1.1 Photon coincidence technique
4.1.2 Auto-Sensitivity (AS) technique
4.1.3 Last-hit detection
4.2 Results
4.2.1 Auto-Sensitivity vs. photon coincidence
4.2.2 Comparison of photon coincidence circuits
4.2.3 Last-hit detection characterization
4.3 Automatic adaptation of pixel parameters
4.4 Summary


5 A SPAD-based linear sensor with in-pixel temporal pattern detection for interference and background rejection with smart readout scheme
5.1 Architecture
5.1.1 Pixel architecture
5.1.2 Readout architecture
5.2 Characterization
5.2.1 In-pixel laser pattern detection characterization
5.2.2 Readout performance assessment
5.3 Operating conditions and limits
5.4 Summary

6 SPAD response linearization: histogram-less LiDAR and high photon flux measurements
6.1 Preliminary validation
6.1.1 Typical d-ToF operation
6.1.2 Histogram-less approach
6.2 Mathematical analysis
6.3 Acquisition schemes
6.3.1 Acquisition scheme #1: Acquire or discard
6.3.2 Acquisition scheme #2: Time-gated
6.3.3 Discussion on implementation, expected performance and mathematical analysis
6.3.4 Comparison with state-of-the-art
6.4 Measurement results
6.4.1 Preliminary considerations
6.4.2 Measurements with background light only
6.4.3 Measurements with background and laser light and extraction of the ToF
6.5 Summary

7 Conclusion
7.1 Results
7.1.1 Modelling of SPAD-based d-ToF systems
7.1.2 Comparative evaluation of background-rejection techniques
7.1.3 Interference rejection
7.1.4 Histogram-less and high-flux LiDAR
7.2 Future work and research
Bibliography

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8th Space & Scientific CMOS Image Sensors workshop – abstracts due Sep 13, 2024

Image Sensors World        Go to the original article...

CNES, ESA, AIRBUS DEFENCE & SPACE, THALES ALENIA SPACE, SODERN, OHB, ISAE SUP’AERO are pleased to invite you to the 8th “Space & Scientific CMOS Image Sensors” workshop to be held in TOULOUSE on November 26th and 27th 2024 within the framework of the Optics and Optoelectronics COMET (Communities of Experts).

The aim of this workshop is to focus on CMOS image sensors for scientific and space applications. Although this workshop is organized by actors of the Space Community, it is widely open to other professional imaging applications such as Machine vision, Medical, Advanced Driver Assistance Systems (ADAS), and Broadcast (UHDTV) that boost the development of new pixel and sensor architectures for high end applications. Furthermore, we would like to invite Laboratories and Research Centers which develop Custom CMOS image sensors with advanced smart design on-chip to join this workshop.

Topics
- Pixel design (high QE, FWC, MTF optimization, low lag,…)
- Electrical design (low noise amplifiers, shutter, CDS, high speed architectures, TDI, HDR)
- On-chip ADC or TDC (in pixel, column, …)
- On-chip processing (smart sensors, multiple gains, summation, corrections)
- Low-light detection (electron multiplication, avalanche photodiodes, quanta image sensors,)
- Photon counting, Time resolving detectors (gated, time-correlated single-photon counting)
- Hyperspectral architectures
- Materials (thin film, optical layers, dopant, high-resistivity, amorphous Si)
- Processes (backside thinning, hybridization, 3D stacking, anti-reflection coating)
- Packaging
- Optical design (micro-lenses, trench isolation, filters)
- Large size devices (stitching, butting)
- High speed interfaces
- Focal plane architectures
- CMOS image sensors with recent space heritage (in-flight performance)

Venue
DIAGORA
Centre de Congrès et d'Exposition. 150, rue Pierre Gilles de Gennes
31670 TOULOUSE – LABEGE

Abstract submission
Please send a short abstract on one A4 page maximum in word or pdf format giving the title, the authors name and affiliation, and presenting the subject of your talk, to L-WCIS24@cnes.fr

Workshop format & official language
Oral presentation shall be requested for the workshop. The official language for the workshop is English.

Slide submission
After abstract acceptance notification, the author(s) will be requested to prepare their presentation in pdf or Powerpoint file format, to be presented at the workshop and to provide a copy to the organizing committee with an authorization to make it available for all attendees, and on-line for the CCT members.

Registration
Registration fee : 100 €.
https://evenium.events/space-and-scientific-cmos-image-sensors-2024/ 

Calendar
13th September 2024 Deadline for abstract submission
11th October 2024 Author notification & preliminary programme
14th October 2024 Registration opening
8th November 2024 Final programme
26th-27th November 2024 Workshop

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TriEye launches TES200 SWIR Image Sensor

Image Sensors World        Go to the original article...

TriEye has launched the TES200, a 1.3MP SWIR image sensor for machine vision and robotics. See press release below.

TEL  AVIV,  Israel,  September 3, 2024/ – TriEye, pioneer of the world's first cost-effective,  mass-market  Short-Wave  Infrared  (SWIR)  sensing  technology, announced today the release of the TES200 1.3MP SWIR image sensor. Based on the innovative TriEye CMOS image sensor technology that allows SWIR capabilities using a CMOS manufacturing process, the TES200 is the first commercially available product released in the Raven product family.

The TES200 operates in the 700nm to 1650nm wavelength range, delivering high sensitivity and 1.3MP resolution. With its large format, high frame rate, and low power consumption, the TES200 offers enhanced sensitivity and dynamic range. This makes the new image sensor ideal for imaging and sensing applications across various industries, including automotive, industrial, robotics, and biometrics.

"We are proud to announce the commercial availability of the TES200 image sensor. Our CMOS-based solution has set new standards in the automotive market, and with the rise of new Artificial Intelligence (AI) systems, the demand for more sensors and more information has increased. The TES200 now brings these advanced SWIR capabilities to machine vision and robotic systems in various  industries,” said Avi Bakal, CEO of TriEye. “We are excited to offer a solution that delivers a new domain of capabilities in a cost-effective and scalable way, broadening the reach of advanced sensing technology."

The TriEye Raven image sensor family is designed for emerging machine vision and robotics applications,  incorporating  the  latest  SWIR  pixel  and  packaging technologies. The  TES200 is  immediately available in sample quantities and available for production orders with delivery in Q2 2025. 


 

Experience the TES200 in Action at CIOE and VISION 2024

We invite you to explore the advanced capabilities of the TES200 at the CIOE exhibition, held from September 11 to 13, 2024, at the Shenzhen World Exhibition and  Convention  Center,  China,  within the  Lasers  Technology  &  Intelligent Manufacturing Expo. View the demo at the Vertilas booth no. 4D021, 4D022. Then, meet TriEye’s executive team at VISION 2024 in Stuttgart, Germany, from October 8 to 10, at the TriEye booth no. 8A08, where you can experience a live demo of the TES200 and the brand new Ovi 2.0 devkit, and learn firsthand about our latest developments in SWIR imaging.

About TriEye 

TriEye is the pioneer of the world’s-first CMOS-based Short-Wave Infrared (SWIR) image  sensing solutions.  Based  on  advanced  academic  research,  TriEye’s breakthrough technology enables HD SWIR imaging and accurate deterministic 3D sensing  in  all  weather  and  ambient  lighting conditions.  The  company's semiconductor and photonics technology enabled the development of the SEDAR (Spectrum Enhanced Detection And Ranging) platform, which allows perception systems to operate and deliver reliable image data and actionable information, while reducing expenditure up to 100x the existing industry rates. For more information, visit www.trieye.tech

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