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Association for Advancing Automation (A3) publishes its list of "Image Sensor Innovations that Push Machine Vision Forward."

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Images taken with our 940nm NIR QF sensor (top left) and with our 1400nm SWIR QF sensor (bottom left). Corresponding images taken using a visible smartphone camera (right). QF NIR image shows dramatically better contrast between black electrical wires hidden in the dark green leaves and tree trunks and branches hidden in front of the dark wood fence whereas the SWIR QF image shows how effective it is to use SWIR imaging to see through a Silicon wafer.

Quantum dots are not new, and scientists were already studying their properties in the early 1980s. However, it took years to colloidally synthesize crystals that could absorb infrared light and to create thin-film devices and fabrication processes that would yield the performance and stability necessary for real-world applications. More specifically, ST developed a manufacturing process that would not exceed 150ºC while also creating lithographic methodologies that would preserve the quantum dot’s integrity.

The IEDM 2021 paper explains in detail how ST created this image sensor technology on 300 mm wafers and describes the performance and reliability achieved to date. We plan to provide samples and evaluation kits to potential customers in 2022 and move to mass production in the coming years. Among the potential applications, mobile devices could use the new sensors to improve facial or object detection. Ultimately, a low-cost high-volume SWIR image sensor accessible to all consumers will open the door to new use-cases and applications."

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MDPI publishes a review paper "Metasurface Photodetectors" by Jinzhao Li, Junyu Li, Shudao Zhou, and Fei Yi from Huazhong University of Science and Technology, National University of Defense Technology, and Raytron (China).

"Typical photodetectors only convert the intensity of light electrical output signals, leaving other electromagnetic parameters, such as the frequencies, phases, and polarization states unresolved. Metasurfaces are arrays of subwavelength structures that can manipulate the amplitude, phase, frequency, and polarization state of light. When combined with photodetectors, metasurfaces can enhance the light-matter interaction at the pixel level and also enable the detector pixels to resolve more electromagnetic parameters. In this paper, we review recent research efforts in merging metasurfaces with photodetectors towards improved detection performances and advanced detection schemes. The impacts of merging metasurfaces with photodetectors, on the architecture of optical systems, and potential applications are also discussed."

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Gpixel announces GMAX3809 extending the GMAX family into ITS applications next to its traditional industrial inspection segment. Gpixel optimized the GMAX product architecture with dedicated ITS features such as enhanced NIR response, pixel size of 3.8 μm, LED flicker mitigation and multiple region HDR modes. GMAX3809 is first in a series of GMAX products with optimized product features for ITS applications.

GMAX3809 fits 4096(H) x 2160(V) (9 MP) resolution into a 1.1” format with low noise, charge domain Global Shutter pixels running at 65 fps at 12-bit ADC resolution. GMAX3809’s 3.8 μm pixel achieves a FWC of 11.5 Ke- and noise of 3.6 e- which delivers more than 70 dB linear DR. The peak QE is 60%, a Parasitic Light Sensitivity is -92 dB, and angular response at > 15° is 80%.

GMAX3809 comes standard in a NIR-enhanced version using Gpixel’s Red Fox technology, offering the ultimate balance between NIR sensitivity and MTF. GMAX3809 achieves a QE of more than 30% at 850 nm and 14% at 940 nm.

GMAX3809 delivers 65 fps with 8 pairs of sub-LVDS channels each running at 960 Mbps resulting in a maximum data rate of 7.68 Gbps. On-chip functions, such as on-chip color offset calibration, channel multiplexing, multiple region HDR and LED flicker are available and programmable through SPI or I2C interface.

GMAX3809 is housed in a 163-pin ceramic LGA package with outer dimensions of 27.1 mm x 17.9 mm. The sensor assembly includes a double side AR coated cover glass lid.

GMAX3809 engineering samples can be ordered today for delivery in January, 2022.

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Light Co. publishes a video presenting its automotive stereo camera advantages over LiDAR featuring Guidehouse Principal Analyst Sam Abuelsamid, VP at Co-pace Continental AG Anil Rachakonda, Light CEO Dave Grannan, and Light's Chief Product Officer Prashant Velagaleti:

Politecnico di Milano publishes Harvard University's Federico Capasso lecture "Meta Optics: From Flat Lenses to Structured Light and Dark:"

Sony publishes 3 videos on its Pregius S stacked global shutter sensors (1, 2, 3):

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PRNewswire:  TriEye announces "the first of its kind VCSEL powered Electro-Optic (EO) SWIR system", integrating TriEye CMOS-based sensor with VCSEL as an illumination source.

TriEye demonstrates an EO system by integrating the TriEye Raven with 1350nm SWIR VCSEL-based illumination, provided by their VCSEL partner, as such they enable the highest power density - which today is over 5 watts per mm2 . This new EO system will provide significant value for short-range applications such as mobile, biometrics, industrial automation, medical and more.

TriEye's solution is said to be the first to provide SWIR based sensing using VCSEL technology. TriEye's SWIR system opens doors to next generation perception capabilities by providing a significant value proposition compared to the NIR spectrum. This includes resilience to sunlight and other sources of ambient noises while providing an eye-safe illumination source. With this combination, the perception system will have longer range and better accuracy than previously achievable with NIR based systems.

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NTT Device Technology Lab publishes an OSA Optica paper "Full-color-sorting metalenses for high-sensitivity image sensors" by Masashi Miyata, Naru Nemoto, Kota Shikama, Fumihide Kobayashi, and Toshikazu Hashimoto.

"Image sensors play a critical role in current technologies ranging from smartphones to autonomous vehicles. In these technologies, high-sensitivity image sensors are highly desired because they enable dark-scene/ultra-fast imaging. Unfortunately, a conventional sensor architecture that employs color filters on every pixel fundamentally limits the detected light power per pixel because of the filtering, which has been a long-standing barrier to sensitivity improvement. Here, we demonstrate polarization-insensitive metasurface lenses (metalenses) that sort primary colors on high-density pixels without the use of color filters. The metalenses simultaneously act as pixel-scale color splitters and lenses and are compatible with complementary metal–oxide-semiconductor sensor technology. An image sensor with such metalenses significantly enhances the detected light power, while affording high image quality, incident angle tolerance, and sub-micrometer spatial resolution. The demonstrated architecture opens the way to the development of high-sensitivity color image sensors that exceed current limits while maintaining consistency with state-of-the-art sensor technology."

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 Abhiram Gnanasambandam and Stanley H. Chan from Purdue University publish Arxiv.org paper "Exposure-Referred Signal-to-Noise Ratio for Digital Image Sensors."

"The signal-to-noise ratio (SNR) of a digital image sensor is typically defined as the ratio between the mean over the standard deviation of the sensor's output, thus known as the output-referred SNR. For sensors with a large full-well capacity, the output-referred SNR demonstrates the well-known linear response in the log-log scale. However, as the input exposure approaches the full-well capacity, the vanishing randomness of the saturated pixel will cause this output-referred SNR to artificially go to infinity. Since modern digital image sensors have a small pitch and hence a small full-well capacity, the shortcomings of the output-referred SNR motivated the development of a theoretical concept known as the exposure-referred SNR, first reported in some sensors and computer vision papers in the 1990's and more since 2010. Some intuitions of the exposure-referred SNR have been discussed in the past, but little is known how the exposure-referred SNR can be rigorously derived.

Recognizing the significance of such an analysis to all present and future small pixels, this paper presents a theoretical analysis to justify the definition and answer four questions:

(1) What is the correct definition of SNR?

(2) How is the output-referred SNR related to the exposure-referred SNR?

(3) For simple noise models, the SNRs can be analytically derived, but for complex noise models, how to numerically compute the SNR?

(4) What utilities can the exposure-referred SNR bring to solving imaging tasks?

New theoretical results are shown to confirm the validity of the exposure-referred SNR for image sensors of any bit-depth and full-well capacity."

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ams OSRAM is expanding its portfolio of dToF modules with three new devices for multi-zone and multi-object detection with a wider FoV and extended range. The multi-zone dToF modules TMF8820, TMF8821, and TMF8828 allow for a precise distance measurement.

The TMF8820 divides the FoV into 3x3 or 9 individual detection zones, the TMF8821 into 4x4 or 16 individual detection zones and the TMF8828 into 8x8 or 64 individual detection zones. With multi-zone detection, it is possible to identify where an object is located within the sensors FoV. These new devices feature a dynamically adjustable FoV up to 63°, enabling customers to select either a narrow or wide FoV to meet their application needs. All th
ree dToF modules have a detection range from one centimeter up to five meters.

The modules combine a 940 nm VCSEL, a SPAD array with matching multi-lens optics, and an on-chip microcontroller for histogram processing in one device. Thanks to the compact dimensions of 2.0 mm x 4.6 mm x 1.4 mm, the modules are said to be the smallest multi-zone dToF modules available on the market.

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2021 International Image Sensor Workshop (IISW) held in September publishes papers and some videos on-line. There are 52 regular papers and 32 flash papers (posters) on the recent developments in the industry.

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Imaging & Machine Vision Europe publishes an article about ST QD sensor presentation at IEDM 2021:

"The company demonstrated a 1.62µm pixel pitch global shutter SWIR sensor, with a quantum efficiency of 60 per cent and a shutter efficiency of 99.98 per cent at 1,400nm.

The devices were manufactured on 300mm wafers, so suitable for high-volume production at a relatively low cost.

Speaking to Imaging and Machine Vision Europe, Jonathan Steckel, director of advanced technology intelligence in imaging at ST Microelectronics, and lead author of the paper, said that the cost of the sensor could be down in the single-dollar region, similar to what would be paid for a silicon imager.

The ST work though shows commitment to high-volume production, and could open up SWIR imaging for consumer electronic devices and other larger volume applications.

‘The potential of the technology is that you can essentially do SWIR imaging at silicon cost,’ Steckel said.

The disadvantage of CQD technology for shortwave infrared is that the quantum efficiency is lower than InGaAs sensors. Steckel said that ST’s quantum dot SWIR image sensor is not a huge leap in performance compared to CQD sensors from other suppliers, but that ST is going to make it available at a significant scale and with the reliability that consumer electronic customers demand.

In academia, Professor Edward Sargent at the University of Toronto has reported 80 per cent quantum efficiency of a CQD photodetector at 1,550nm.

‘In industry, in the next couple of years, we’ll probably also be able to develop our technology to hit higher quantum efficiencies, upwards of 70-80 per cent,’ Steckel said. ‘Then it would create more of a value-add, and more of a gap between what silicon can do versus what CQD can do in the NIR, and also close the gap between what InGaAs can do versus CQD technology in the SWIR.’

"Yesterday, at the 67th International Electron Devices Meeting (IEDM), the tone-setting event for the semiconductor industry, ST Microelectronics announced QD image sensors. The 1.62µm pixel pitch sets a new record, and the external quantum efficiency of 60 per cent at 1,400nm inches ever closer to the values found in the incumbent technologies.

The most exciting feature is that these results come from chips fabricated using a 300mm wafer platform – this means that the QD technology has made significant strides in making it ready to manufacture. Upscaling to a wafer-level process promises extraordinary throughput and thus cost evolution. New sensor products based on this process will disrupt the market further, and act as a critical enabler for SWIR imaging in applications that never considered it before, including consumer products.

Looking forward, there are still technological challenges to address. Moving away from lead sulphide-based QDs to lead-free material systems will encourage more players to accept this type of sensor. Improving deposition throughput of the quantum dot layers by going to one-step coating – instead of the standard layer-by-layer coating used currently to achieve the desired final thickness of the absorber – will significantly increase the takt time in volume production.

Moreover, thorough investigation of reliability metrics according to industry standards will set further iterations of QD improvement to optimise long-term stability, and enable even the most harsh applications such as those demanded by the automotive sector."

Quantum dot materials maker Quantum Solutions publishes an article about its QD products used in Emberion SWIR sensors:

"Quantum dot technology offers a more attractive solution. In comparison with InGaAs or Ge, colloidal quantum dots require a much simpler fabrication process. Due to inexpensive deposition techniques, QDs are easily integrable with conventional silicon integrated circuits. As a result, quantum dot technology makes it possible to mass produce VIS-SWIR cameras. This, in turn, reduces the price per VIS-SWIR sensor by 3-10x times potentially, making them much affordable for end users.

There are several organisations that have taken this opportunity and have started applying quantum dots in VIS-SWIR cameras. Emberion is one of the pioneers in commercialisation of quantum-dot based VIS-SWIR cameras. In 2021, they introduced to the market a new product of VIS-SWIR camera based on their in house designed CMOS ROIC – Emberion VS20."

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Information Display publishes a paper "Colloidal Quantum Dot Image Sensors: Technology and Marketplace Opportunities" by Stijn Goossens, Gerasimos Konstantatos, and Antonios Oikonomou from Qurv startup, Grenoble, France, Barcelona, Spain.

"Most computer vision applications can benefit dramatically from the electromagnetic spectrum's NIR (0.7–1.0 μm) and SWIR (1.0–2.5 μm) range. First, sunlight interference can be reduced up to four orders of magnitude (104×), enabling more robust active light-based sensing systems, such as LiDAR and eye-tracking, in outdoor conditions. More relaxed eye safety conditions in the SWIR band allow LiDAR systems to allow orders of magnitude more power, enabling a significant range increase. Furthermore, up to 40× times more photons are available in the SWIR band during moonless nights, allowing true night vision (Fig. 2). Fog and haze are more transparent in the SWIR; therefore, a SWIR imaging system enables enhanced safety under all weather conditions. Furthermore, SWIR imaging enables the detection of substances using optical detection of molecular fingerprints. Qurv names this molecular vision, and envisions use cases such as food quality inspection or distinguishing between water and black ice on the road."

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• Will Semi  is the second largest company in China's semiconductor and chip stocks by market value, second only to SMIC.
• According to data from the China Semiconductor Industry Association, Will Semi is the second largest company in China's IC design companies in terms of revenue, second only to HiSilicon.
• According to Techsugar's statistics, Will Semi design revenue in 2020 is about 17.3 billion yuan, and it is the only company with a revenue of over 10 billion among the Shanghai and Shenzhen IC design companies. Goodix Technology’s IC design business is the second only 67 100 million yuan in revenue.
• Will Semi is the company with the largest number of employees (3291) among domestic listed chip design companies, with the highest per capita research and development expenses -up to 1.05 million yuan per capita. In 2020, the research and development expenses reached 1.727 billion yuan.
• The per capita salary of Will Semi reaches 456,631.64 yuan, and the employee benefits are among the best

In 1985, Yu Renrong successfully entered Tsinghua University's Department of Wireless Communication (now Electronic Engineering Department) 85 EE85 class, only then began to have the legendary character of the protagonist in the novel:

Class 85 EE85 of the Department of Wireless Communications of Tsinghua University (Beijing) is known as "Half of China's Chip Industry". Many people who will stir China's chip and sensor industries in the future come from here, such as:

• Zhao Weiguo - Tsinghua Unisplendour and Yangtze River Storage, Chairman (leading domestic chip company)
• Yu Renrong - Founder of Will Semi
• Feng Chenhui - Co-founder of Zhuosheng Microelectronics (Leading RF Chip Enterprise)
• Lu Huang - One of the early investors of Will Semiconductor and Zhaoyi Innovation. Founder of 4 companies including Quanzhou Kuntaixin Microelectronics Technology Co., Ltd., Quanzhou Yushuo Industrial Design Co., Ltd. and Quanzhou Aifang Technology Co., Ltd.
• Lidong Zhao - Founder of Suiyuan Technology (China's first self-developed artificial intelligence high-end training chip), former General Manager of RDA
• Zhao Lixin - Founder of Galaxycore Microelectronics (leading domestic camera sensor company)
• Ren Zhijun - Founder of Xinhenghui Smart Card Company
• Shu Qingming - One of the founders of Zhaoyi Innovation (a leading company in memory chips)
• Weidong Liu - Founder of Jiuhao Electronics (sensor signal conditioning chip)
• Yu Qunhui (female) - Deputy General Manager of Feitian Integrity
• Gao Feng - General Manager of Stony Brook Capital (Semiconductor Investment Fund), former Deputy General Manager of Tsinghua Unisplendour

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