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2020 IEEE International Symposium on Circuits and Systems (ISCAS) paper "Higher Quality Images for a Visible-Light CMOS Sensor by Suppressing Spatial Row-Wise Noise with an Output-Capacitor-Less, Internal Low-Dropout Regulator" by Ali E. Zadeh from University of Southern California shows a dramatic FPN reduction at the price of just 50mV supply dropout:Archives for October 2020
Ouster Takes Apple iPad LiDAR Concept to Extreme
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BusinessWire: Ouster announces a solid-state lidar based on its digital lidar architecture. The new ES2 will be the company's first solid-state, high-resolution, long-range digital lidar. With a $600 expected price for automotive production programs with SOP 2024 and a 200+ meter range on 10% reflective targets, the ES2 is aimed to ADAS and industrial applications.
"The ES2 sensor uses “electronic scanning” to sequentially fire an array of over ten thousand lasers printed onto a single chip. These lasers are paired with a custom digital detector array capable of counting trillions of individual photons every second.
These laser and detector arrays are the same core technology used in Ouster’s OS series spinning lidar sensors, as well as numerous consumer devices such as the iPhone and iPad Pro. With tens of thousands of lasers on the chip, each fixed on a different point in the field of view, no moving parts are required to reach the range, field of view, and resolution targets of high-performance autonomy customers."
Autosens Interviews
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Autosens publishes interviews with Aeye, Immervision, Xenomatics, and more:
Pictos Accuses Samsung in Patent Infringement
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Federal Register: Pictos files patent infringement complaint against Samsung.
"The Commission has received a complaint and a submission pursuant to § 210.8(b) of the Commission's Rules of Practice and Procedure filed on behalf of Pictos Technologies, Inc. on September 25, 2020. The complaint alleges violations of section 337 of the Tariff Act of 1930 (19 U.S.C. 1337) in the importation into the United States, the sale for importation, and the sale within the United States after importation of certain digital imaging devices and products containing the same and Start Printed Page 61981components thereof. The complaint names as respondents: Samsung Electronics Co., Ltd. of Korea; Samsung Electronics America, Inc. of Ridgefield Park, NJ; and Samsung Semiconductor, Inc. of San Jose, CA. The complainant requests that the Commission issue a limited exclusion order and cease and desist orders."
The original image sensor company Pictos started as a spin-off from Rockwell/Conexant and has been acquired and shut down later by ESS. Its not immediately clear whether the new Pictos has any relationship with the original company or its patents. Pictos.com web site delivers only one message:
Canon EOS 850D Rebel T8i review
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The Canon EOS 850D / Rebel T8i is a mid-range DSLR with a 24mp APSC sensor, 7fps bursts, 4k video and a fully-articulated screen. It sits at the top of the triple-digit EOS or Rebel series, which puts it directly below the EOS 90D. Find out how they compare in my review!…
The post Canon EOS 850D Rebel T8i review appeared first on Cameralabs.
Samsung Presents its 65/14nm Stacked FinFET Sensor
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Samsung presents "A Low-Power 65/14nm Stacked CMOS Image Sensor" by Minho Kwon, Seunghyun Lim, Hyeokjong Lee, Il-seon Ha, Moo-young Kim, Il-Jin Seo, Suho Lee, Yongsuk Choi, Kyunghoon Kim, Hansoo Lee, Won-Woong Kim, Seonghye Park, Kyongmin Koh, Jesuk Lee, and Yongin Park at the 2020 IEEE International Symposium on Circuits and Systems (ISCAS) to be held virtually on October 10-21.
"This paper presents a low-power stacked CMOS image sensor (CIS) in 65/14nm process. With 14nm process, we could achieve 29% less power consumption than the conventional CIS in 65/28nm process. The measured random telegraph noise (RTN) result shows the 65/14nm stacked CIS to guarantee the commercial sensor image quality even though a fin field-effect transistor (FinFET) process is three-dimension channel structure. The pixel array of the implemented chip consists of 12-mega pixels (Mp) with a dual-photodiode (2PD) in 1.4μm pixel pitch, and the sensor output provides 120 frames per second while it consumes 612mW for 12Mp image and 3Mp auto-focus data via a mobile industry processor interface (MIPI) physical layer (DPHY) up to 6.5Gbps/lane. The measured random noise is 2.2e-at 16× analog gain, and figure-of-merit (FoM) of analog-to-digital converters (ADCs) achieves 0.46e-nJ."
Samsung Presents 13MP Low Power Image Sensor
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Samsung presents "A 1/3-Inch 1.12μm-Pitch 13Mpixel CMOS Image Sensor with a Low-Power Readout Architecture" by Yunhong Kim, Heesung Chae, Kyung-Min Kim, Kyungtae Kim, Sukki Yoon, Kyoungmin Koh, Jesuk Lee, and Yongin Park at the 2020 IEEE International Symposium on Circuits and Systems (ISCAS) to be held virtually on October 10-21.
"This paper presents an implementation of a CMOS image sensor with a 65 nm CMOS process. The pixel array consists of 13 Mp with 1.12 μm pixel pitch. The fabricated sensor uses 10-bit column-parallel single slope analog-to-digital converters (ADC) based on a low-power readout architecture. Furthermore, a low-power built-in self-test (BIST) is proposed to avoid test over-kills. The proposed image sensor achieves a frame rate of 30–120 frames/s, a temporal random noise of 2 e − rms , a dynamic range of 65.2dB, peak integral non-linearity of 0.18 % and peak differential non-linearity of 0.26 least-significant bits. It consumes only 99.7mW at 30 frames/s."
Samsung Presents 1.3MP Event-Driven Sensor with 4.95um Pixels
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Samsung presents "A 1280×960 Dynamic Vision Sensor with a 4.95-μm Pixel Pitch and Motion Artifact Minimization" by Yunjae Suh, Seungnam Choi, Masamichi Ito, Jeongseok Kim, Youngho Lee, Jongseok Seo, Heejae Jung, Dong-Hee Yeo, Seol Namgung, Jongwoo Bong, Sehoon Yoo, Seung-Hun Shin, Doowon Kwon, Pilkyu Kang, Seokho Kim, Hoonjoo Na, Kihyun Hwang, Changwoo Shin, Jun-Seok Kim, Paul K. J. Park, Joonseok Kim, Hyunsurk Ryu, and Yongin Park at the 2020 IEEE International Symposium on Circuits and Systems (ISCAS) to be held virtually on October 10-21.
"This paper reports a 1280×960 DVS. A 4.95-μm pixel pitch is achieved with in-pixel Cu-Cu connection and the newly designed GIDL-suppression scheme. A sequential column selection scheme and a global event-holding function are implemented to minimize motion artifacts. The power consumption per pixel of 122 nW is 1.25× smaller and the maximum readout speed of 1.3 Geps is 4.33× faster than the previous state-of-the-art."
ToF with SensL-ON Semi
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Autosens publishes an interview with Wade Appelman, VP of the SensL Division at ON Semi:
2020 International SPAD Sensor Workshop Papers
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2020 International SPAD Sensor Workshop (ISSW) papers are just published at the International Image Sensor Society web site. The workshop has been held on-line in June 2020. The list of papers is below:
- Charge-Focusing SPAD Image Sensors for Low Light Imaging Applications
Kazuhiro Morimoto, Canon - Custom silicon technologies for high detection efficiency SPAD arrays
Angelo Gulinatti, Politecnico di Milano - LFoundry: SPAD, status and perspective
Giovanni Margutti, LFoundry - Device and method for a precise breakdown voltage detection of APD/SPAD in a dark environment
Alexander Zimmer, XFAB - Ge on Si SPADs for LIDAR and Quantum Technology Applications
Douglas Paul, University of Glasgow - Timing is Everything
Richard Walker, Photon Force - The Great Wavelength Debate: Which Will Prevail for Automotive LIDAR?
Bahman Hadji, OnSemiconductor - 3D-Stacked SPAD in 40/45nm BSI Technology
Georg Rohrer, AMS - BSI SPAD arrays based on wafer bond technology
Werner Brockherde, Fraunhofer - Planar Microlenses for SPAD sensors
Norbert Moussy, CEA-LETI - 3D Integrated Frontside Illuminated Photon-to-Digital Converters: Status and Applications
Jean-Francois Pratte, University of Sherbrooke - Combining linear and SPAD-mode diode operation in pixel for wide dynamic range CMOS optical sensing
Matthew Johnston, Oregon State University - ToF Image Sensor Systems using SPADs and Photodiodes
Simon Kennedy, Monash University - A 1.1 mega-pixels vertical avalanche photodiode (VAPD) CMOS image sensor for a long range time-of-flight (TOF) system
Yukata Hirose, Panasonic - Single photon detector for space active debris removal and exploration
Alexandre Pollini, CSEM - 4D solid state LIDAR – NEXT Generation NOW
Unsal Kabuk, IBEO - Depth and Intensity LiDAR imaging with Pandion SPAD array
Salvatore Gnecchi, OnSemi - 256 x 16 SPAD Array and 16-Channel Ultrashort Pulsed Laser Driver for Automotive LIDAR
André Srowig, ELMOS - SPAD Sensors: technologies and applications
Sara Pellegrini, STMicroelectronics - From device to systems: 3D sensing solutions at AMS
David Stoppa, AMS - Next-generation technologies to enable high-performance, low-cost lidar
Hod Finkelstein, Sense Photonics - LIDAR using SPADs in the visible and short-wave infrared
Gerald Buller, Heriot-Watt University - InP-based SPADs for Automotive Lidar
Mark Itzler, Argo AI - Custom Focal Plane Arrays of SWIR SPADs
Erik Duerr, MIT Lincoln Labs - CMOS SPAD Sensors with Embedded Smartness
Ion Vornicu, University of Seville - Modelling TDC Circuit Perfromance for SPAD Sensor Arrays
Daniel van Blerkom, Ametek (Forza) - Data processing of SPAD sensors for high quality imaging
Chao Zhang, Adaps Photonics - Scalable, Multi-functional CMOS SPAD arrays for Scientific Imaging
Leonardo Gasparini, FBK - Small and Smart SPAD Pixels
Edoardo Charbon, EPFL - High-resolution imaging of the spatio-temporal dynamics of protein interactions via fluorescence lifetime imaging with SPAD arrays
Simon Ameer-Beg, King's College - Image scanning microscopy with classical and quantum correlation contrasts
Ron Tenne, Weizmann Institute - SPAD Arrays for Brain-Computer Interface Applications
Francesco Marsili, Facebook - Introduction to Huawei’s Mission and Technology Visions
Young, Yang Guang, Huawei - Imaging oxygenation by near-infrared optical tomography based on SPAD image sensors
Martin Wolf, ETH Zurich - Raman spectroscopy utilizing a time resolving CMOS SPAD line sensor with a pulsed laser excitation
Ilkka Nissinen, University of Oulu - Optical wireless communication with SPAD receivers
Horst Zimmermann, TU Wien - SPAD Arrays for Non-Line-of-Sight Imaging
Andreas Velten, University of Wisconsin
FBK Low Power VGA Vision Sensor
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FBK publishes an IEEE JSSC paper "A Low-Power VGA Vision Sensor With Embedded Event Detection for Outdoor Edge Applications" by Yu Zou, Massimo Gottardi, Michela Lecca, and Matteo Perenzoni. The paper is available for download here.The project page with demo videos is avaliable here. Thanks to MG for the link!
10Gbps Transmission with 1 Photon per Bit
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Not only image sensors are able to detect single photons with ps timing accuracy these days. Chalmers University of Technology, Sweden, develops a free-space optical transmission system relying on an optical amplifier that, in principle, does not add any excess noise – in contrast to all other preexisting optical amplifiers, referred to as phase-sensitive amplifiers (PSAs). The researchers’ new concept demonstrates an unprecedented receiver sensitivity of just one photon-per-information bit at a data rate of 10Gbps.Intel LiDAR Reverse Engineering
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SystemPlus publishes its reverse engineering of Intel L515 short-range LiDAR:Hybrid Bonding Review
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TechInsights publishes a subscribers-only review of hybrid bonding progress:



























