Archives for October 2020

50mV Dropout Regulator Improves Row FPN by 5x

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2020 IEEE International Symposium on Circuits and Systems (ISCAS) paper "Higher Quality Images for a Visible-Light CMOS Sensor by Suppressing Spatial Row-Wise Noise with an Output-Capacitor-Less, Internal Low-Dropout Regulator" by Ali E. Zadeh from University of Southern California shows a dramatic FPN reduction at the price of just 50mV supply dropout:

 

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Ouster Takes Apple iPad LiDAR Concept to Extreme

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BusinessWire: Ouster announces a solid-state lidar based on its digital lidar architecture. The new ES2  will be the company's first solid-state, high-resolution, long-range digital lidar. With a $600 expected price for automotive production programs with SOP 2024 and a 200+ meter range on 10% reflective targets, the ES2 is aimed to ADAS and industrial applications.

"The ES2 sensor uses “electronic scanning” to sequentially fire an array of over ten thousand lasers printed onto a single chip. These lasers are paired with a custom digital detector array capable of counting trillions of individual photons every second. 

These laser and detector arrays are the same core technology used in Ouster’s OS series spinning lidar sensors, as well as numerous consumer devices such as the iPhone and iPad Pro. With tens of thousands of lasers on the chip, each fixed on a different point in the field of view, no moving parts are required to reach the range, field of view, and resolution targets of high-performance autonomy customers."

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Autosens Interviews

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 Autosens publishes interviews with Aeye, Immervision, Xenomatics, and more:

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Pictos Accuses Samsung in Patent Infringement

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 Federal Register: Pictos files patent infringement complaint against Samsung.

"The Commission has received a complaint and a submission pursuant to § 210.8(b) of the Commission's Rules of Practice and Procedure filed on behalf of Pictos Technologies, Inc. on September 25, 2020. The complaint alleges violations of section 337 of the Tariff Act of 1930 (19 U.S.C. 1337) in the importation into the United States, the sale for importation, and the sale within the United States after importation of certain digital imaging devices and products containing the same and Start Printed Page 61981components thereof. The complaint names as respondents: Samsung Electronics Co., Ltd. of Korea; Samsung Electronics America, Inc. of Ridgefield Park, NJ; and Samsung Semiconductor, Inc. of San Jose, CA. The complainant requests that the Commission issue a limited exclusion order and cease and desist orders."

The original image sensor company Pictos started as a spin-off from Rockwell/Conexant and has been acquired and shut down later by ESS. Its not immediately clear whether the new Pictos has any relationship with the original company or its patents. Pictos.com web site delivers only one message:

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Canon EOS 850D Rebel T8i review

Cameralabs        Go to the original article...

The Canon EOS 850D / Rebel T8i is a mid-range DSLR with a 24mp APSC sensor, 7fps bursts, 4k video and a fully-articulated screen. It sits at the top of the triple-digit EOS or Rebel series, which puts it directly below the EOS 90D. Find out how they compare in my review!…

The post Canon EOS 850D Rebel T8i review appeared first on Cameralabs.

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Samsung Presents its 65/14nm Stacked FinFET Sensor

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Samsung presents "A Low-Power 65/14nm Stacked CMOS Image Sensor" by Minho Kwon, Seunghyun Lim, Hyeokjong Lee, Il-seon Ha, Moo-young Kim, Il-Jin Seo, Suho Lee, Yongsuk Choi, Kyunghoon Kim, Hansoo Lee, Won-Woong Kim, Seonghye Park, Kyongmin Koh, Jesuk Lee, and Yongin Park  at the 2020 IEEE International Symposium on Circuits and Systems (ISCAS) to be held virtually on October 10-21.

"This paper presents a low-power stacked CMOS image sensor (CIS) in 65/14nm process. With 14nm process, we could achieve 29% less power consumption than the conventional CIS in 65/28nm process. The measured random telegraph noise (RTN) result shows the 65/14nm stacked CIS to guarantee the commercial sensor image quality even though a fin field-effect transistor (FinFET) process is three-dimension channel structure. The pixel array of the implemented chip consists of 12-mega pixels (Mp) with a dual-photodiode (2PD) in 1.4μm pixel pitch, and the sensor output provides 120 frames per second while it consumes 612mW for 12Mp image and 3Mp auto-focus data via a mobile industry processor interface (MIPI) physical layer (DPHY) up to 6.5Gbps/lane. The measured random noise is 2.2e-at 16× analog gain, and figure-of-merit (FoM) of analog-to-digital converters (ADCs) achieves 0.46e-nJ."

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Samsung Presents 13MP Low Power Image Sensor

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Samsung presents "A 1/3-Inch 1.12μm-Pitch 13Mpixel CMOS Image Sensor with a Low-Power Readout Architecture" by Yunhong Kim, Heesung Chae, Kyung-Min Kim, Kyungtae Kim, Sukki Yoon, Kyoungmin Koh, Jesuk Lee, and Yongin Park at the 2020 IEEE International Symposium on Circuits and Systems (ISCAS) to be held virtually on October 10-21.

"This paper presents an implementation of a CMOS image sensor with a 65 nm CMOS process. The pixel array consists of 13 Mp with 1.12 μm pixel pitch. The fabricated sensor uses 10-bit column-parallel single slope analog-to-digital converters (ADC) based on a low-power readout architecture. Furthermore, a low-power built-in self-test (BIST) is proposed to avoid test over-kills. The proposed image sensor achieves a frame rate of 30–120 frames/s, a temporal random noise of 2 e − rms , a dynamic range of 65.2dB, peak integral non-linearity of 0.18 % and peak differential non-linearity of 0.26 least-significant bits. It consumes only 99.7mW at 30 frames/s."

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Samsung Presents 1.3MP Event-Driven Sensor with 4.95um Pixels

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Samsung presents "A 1280×960 Dynamic Vision Sensor with a 4.95-μm Pixel Pitch and Motion Artifact Minimization" by Yunjae Suh, Seungnam Choi, Masamichi Ito, Jeongseok Kim, Youngho Lee, Jongseok Seo, Heejae Jung, Dong-Hee Yeo, Seol Namgung, Jongwoo Bong, Sehoon Yoo, Seung-Hun Shin, Doowon Kwon, Pilkyu Kang, Seokho Kim, Hoonjoo Na, Kihyun Hwang, Changwoo Shin, Jun-Seok Kim, Paul K. J. Park, Joonseok Kim, Hyunsurk Ryu, and Yongin Park  at the 2020 IEEE International Symposium on Circuits and Systems (ISCAS) to be held virtually on October 10-21.

"This paper reports a 1280×960 DVS. A 4.95-μm pixel pitch is achieved with in-pixel Cu-Cu connection and the newly designed GIDL-suppression scheme. A sequential column selection scheme and a global event-holding function are implemented to minimize motion artifacts. The power consumption per pixel of 122 nW is 1.25× smaller and the maximum readout speed of 1.3 Geps is 4.33× faster than the previous state-of-the-art."

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ToF with SensL-ON Semi

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 Autosens publishes an interview with Wade Appelman, VP of the SensL Division at ON Semi:

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2020 International SPAD Sensor Workshop Papers

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2020 International SPAD Sensor Workshop (ISSW) papers are just published at the International Image Sensor Society web site. The workshop has been held on-line in June 2020. The list of papers is below:

  1. Charge-Focusing SPAD Image Sensors for Low Light Imaging Applications
    Kazuhiro Morimoto, Canon
  2. Custom silicon technologies for high detection efficiency SPAD arrays
    Angelo Gulinatti, Politecnico di Milano
  3. LFoundry: SPAD, status and perspective
    Giovanni Margutti, LFoundry
  4. Device and method for a precise breakdown voltage detection of APD/SPAD in a dark environment
    Alexander Zimmer, XFAB
  5. Ge on Si SPADs for LIDAR and Quantum Technology Applications
    Douglas Paul, University of Glasgow
  6. Timing is Everything
    Richard Walker, Photon Force
  7. The Great Wavelength Debate: Which Will Prevail for Automotive LIDAR?
    Bahman Hadji, OnSemiconductor
  8. 3D-Stacked SPAD in 40/45nm BSI Technology
    Georg Rohrer, AMS
  9. BSI SPAD arrays based on wafer bond technology
    Werner Brockherde, Fraunhofer
  10. Planar Microlenses for SPAD sensors
    Norbert Moussy, CEA-LETI
  11. 3D Integrated Frontside Illuminated Photon-to-Digital Converters: Status and Applications
    Jean-Francois Pratte, University of Sherbrooke
  12. Combining linear and SPAD-mode diode operation in pixel for wide dynamic range CMOS optical sensing
    Matthew Johnston, Oregon State University
  13. ToF Image Sensor Systems using SPADs and Photodiodes
    Simon Kennedy, Monash University
  14. A 1.1 mega-pixels vertical avalanche photodiode (VAPD) CMOS image sensor for a long range time-of-flight (TOF) system
    Yukata Hirose, Panasonic
  15. Single photon detector for space active debris removal and exploration
    Alexandre Pollini, CSEM
  16. 4D solid state LIDAR – NEXT Generation NOW
    Unsal Kabuk, IBEO
  17. Depth and Intensity LiDAR imaging with Pandion SPAD array
    Salvatore Gnecchi, OnSemi
  18. 256 x 16 SPAD Array and 16-Channel Ultrashort Pulsed Laser Driver for Automotive LIDAR
    André Srowig, ELMOS
  19. SPAD Sensors: technologies and applications
    Sara Pellegrini, STMicroelectronics
  20. From device to systems: 3D sensing solutions at AMS
    David Stoppa, AMS
  21. Next-generation technologies to enable high-performance, low-cost lidar
    Hod Finkelstein, Sense Photonics
  22. LIDAR using SPADs in the visible and short-wave infrared
    Gerald Buller, Heriot-Watt University
  23. InP-based SPADs for Automotive Lidar
    Mark Itzler, Argo AI
  24. Custom Focal Plane Arrays of SWIR SPADs
    Erik Duerr, MIT Lincoln Labs
  25. CMOS SPAD Sensors with Embedded Smartness
    Ion Vornicu, University of Seville
  26. Modelling TDC Circuit Perfromance for SPAD Sensor Arrays
    Daniel van Blerkom, Ametek (Forza)
  27. Data processing of SPAD sensors for high quality imaging
    Chao Zhang, Adaps Photonics
  28. Scalable, Multi-functional CMOS SPAD arrays for Scientific Imaging
    Leonardo Gasparini, FBK
  29. Small and Smart SPAD Pixels
    Edoardo Charbon, EPFL
  30. High-resolution imaging of the spatio-temporal dynamics of protein interactions via fluorescence lifetime imaging with SPAD arrays
    Simon Ameer-Beg, King's College
  31. Image scanning microscopy with classical and quantum correlation contrasts
    Ron Tenne, Weizmann Institute
  32. SPAD Arrays for Brain-Computer Interface Applications
    Francesco Marsili, Facebook
  33. Introduction to Huawei’s Mission and Technology Visions
    Young, Yang Guang, Huawei
  34. Imaging oxygenation by near-infrared optical tomography based on SPAD image sensors
    Martin Wolf, ETH Zurich
  35. Raman spectroscopy utilizing a time resolving CMOS SPAD line sensor with a pulsed laser excitation
    Ilkka Nissinen, University of Oulu
  36. Optical wireless communication with SPAD receivers
    Horst Zimmermann, TU Wien
  37. SPAD Arrays for Non-Line-of-Sight Imaging
    Andreas Velten, University of Wisconsin

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FBK Low Power VGA Vision Sensor

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FBK publishes an IEEE JSSC paper "A Low-Power VGA Vision Sensor With Embedded Event Detection for Outdoor Edge Applications" by Yu Zou, Massimo Gottardi, Michela Lecca, and Matteo Perenzoni. The paper is available for download here.

"We report on a low-power VGA vision sensor embedding event-detection capabilities targeted to battery-powered vision processing at the edge. The sensor relies on an always-on double-threshold dynamic background subtraction (DT-DBS) algorithm. The resulting motion bitmap is de-noised, projected along xy-axes of the array of pixels and filtered to robustly detect moving targets even in noisy outdoor scenarios. The chip operates in motion detection (MD), applied on a QQVGA sub-sampled image, looking for anomalous motion in the scene at 344 μW, and in imaging mode (IM), delivering full-resolution gray-scale images with associated local binary pattern (LBP) coding and motion bitmaps at 8 frames/s and 1.35 mW. The 4-μm pixel vision sensor is manufactured in a 110-nm 1P4M CMOS and occupies 25.4 mm²."


The project page with demo videos is avaliable here. Thanks to MG for the link!

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10Gbps Transmission with 1 Photon per Bit

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Not only image sensors are able to detect single photons with ps timing accuracy these days. Chalmers University of Technology, Sweden, develops a free-space optical transmission system relying on an optical amplifier that, in principle, does not add any excess noise – in contrast to all other preexisting optical amplifiers, referred to as phase-sensitive amplifiers (PSAs). The researchers’ new concept demonstrates an unprecedented receiver sensitivity of just one photon-per-information bit at a data rate of 10Gbps.

In the new concept from Chalmers, information is encoded onto a signal wave, which along with a pump wave at different frequency generates a conjugated wave (known as an idler) in a nonlinear medium. These three waves are launched together into the free space. At the receiving point, after capturing the light in an optical fiber, the PSA amplifies the signal using a regenerated pump wave. The amplified signal is then detected in a conventional receiver.

This approach fundamentally results in the best possible sensitivity of any pre-amplified optical receiver and also outperforms the all other current state-of-the-art receiver technologies,” says Peter Andrekson. The system uses a simple modulation format encoded with a standard error correction code and a coherent receiver with digital signal processing for signal recovery. This method is straightforwardly scalable to much higher data rates if needed. It also operates at room temperature, meaning it can be implemented in space terminals and not only on the ground.

The paper is publishes in Nature: "One photon-per-bit receiver using near-noiseless phase-sensitive amplification" by Ravikiran Kakarla, Jochen Schröder & Peter A. Andrekson 

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Intel LiDAR Reverse Engineering

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SystemPlus publishes its reverse engineering of Intel L515 short-range LiDAR:

"The RealSense L515 is the third generation of 3D sensing camera from Intel and the first with a MEMS based solid-state LIDAR.

The 3D sensor has a minimum depth of 0.25m. It can scan environments up to 9m wide with a resolution depth of up to 1024×768 at 30 frames per second (fps). The system uses Application Specific Integrated Circuits (ASICs) from Intel for vision processing and MEMS control. This camera LIDAR with its machine vision processor is optimized for 3D scanning, smart building and robotic applications.

The RealSense L515 integrates an intelligent USB-C powered solid-state LIDAR camera in a compact aluminium case. It combines a conventional red/green/blue (RGB) color sensor, a near infrared LIDAR for 3D sensing. The LIDAR is based on an Edge-Emitting Laser (EEL) for the light source, a MEMS micro-mirror to scan the environment, a photodiode to measure the time of flight and optical lenses to focus the beam. The bi-axial micro-mirror from STMicroelectronics is the core of the scanning mechanism."

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Hybrid Bonding Review

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TechInsights publishes a subscribers-only review of hybrid bonding progress: 

 "Hybrid bonding went into volume production after Sony licensed the Zibond technology from Ziptronix (now part of Xperi) and introduced it almost five years ago into their CMOS image sensors (CIS) that use stacked sensor and image processors. Zibond was initially a wafer/wafer bonding technique focused on oxide/oxide interfaces, but it evolved to include copper/copper direct bonds, and Xperi rebranded it as Direct Bond Interconnect (DBI).

Not all companies use Xperi’s licensed technology, so the industry term for face/face wafer bonding with copper/copper interconnect has become “hybrid bonding” (HB). Now almost all of the stacked CIS manufacturers or their foundries have HB available. In the meantime, the process has evolved to give bonding pitches of >4 µm and pad diameters >2 µm."

An example cross section of Sony IMX260 stacked sensor:

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